公开(公告)号：US10593801B2

公开(公告)日：2020-03-17

申请号：US15062553

申请日：2016-03-07

申请人： Tae-Jong Lee ,  Sanghyuk Hong ,  TaeYong Kwon ,  Sunjung Kim ,  Cheol Kim

发明人： Tae-Jong Lee ,  Sanghyuk Hong ,  TaeYong Kwon ,  Sunjung Kim ,  Cheol Kim

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66 ,  H01L21/8238

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.

公开(公告)号：US20110129705A1

公开(公告)日：2011-06-02

申请号：US12911589

申请日：2010-10-25

申请人： Tae-Jong Lee

发明人： Tae-Jong Lee

IPC分类号： H01M10/02

CPC分类号： H01M2/34 ,  H01M2/1022 ,  H01M2/347 ,  H01M10/052 ,  H01M10/482 ,  H02J7/0031

摘要： A battery pack is capable of preventing problems from occurring due to the damage of a secondary battery when external shock is applied. The battery pack includes battery cells serially coupled, coupled in parallel, or coupled in a combination of series and parallel, a shock detecting unit for detecting external shock, and a controller coupled to the battery cell and the shock detecting unit to output sensed shock information to the outside.

公开(公告)号：US20070176225A1

公开(公告)日：2007-08-02

申请号：US11700083

申请日：2007-01-31

申请人： Sang-Hoon Lee ,  Ki-Su Na ,  Man-Sug Kang ,  Yong-Sun Lee ,  Yong-Seok Kim ,  Tae-Jong Lee

发明人： Sang-Hoon Lee ,  Ki-Su Na ,  Man-Sug Kang ,  Yong-Sun Lee ,  Yong-Seok Kim ,  Tae-Jong Lee

IPC分类号： H01L29/788 ,  H01L21/8238

CPC分类号： H01L27/115 ,  H01L21/76224 ,  H01L27/11521

摘要： A semiconductor device having reduced pitting may be formed from isolation layer patterns on a semiconductor substrate defining an active region, a tunnel oxide layer on the active region, the tunnel oxide layer having a nitrified surface, a floating gate on the tunnel oxide layer, a dielectric layer on the floating gate, and a control gate on the dielectric layer.

摘要翻译： 具有减小的点蚀的半导体器件可以由限定有源区的半导体衬底上的隔离层图案，有源区上的隧道氧化物层，具有硝化表面的隧道氧化物层，隧道氧化物层上的浮置栅极， 在浮动栅极上的介电层，以及介电层上的控制栅极。

公开(公告)号：US20160064387A1

公开(公告)日：2016-03-03

申请号：US14750303

申请日：2015-06-25

申请人： Soo-Yeon Jeong ,  Dong-gu Yi ,  Tae-Jong Lee ,  Jae-Po Lim

发明人： Soo-Yeon Jeong ,  Dong-gu Yi ,  Tae-Jong Lee ,  Jae-Po Lim

IPC分类号： H01L27/11 ,  H01L29/40 ,  H01L29/08 ,  H01L27/088

CPC分类号： H01L27/1104 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/408 ,  H01L29/66545 ,  H01L29/66636

摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

摘要翻译： 提供一种半导体器件及其制造方法。 半导体器件包括形成在衬底上并沿第一方向延伸并包括第一至第三部分的第一鳍式有源图案。 第三部分的至少一个尺寸小于第一部分的对应尺寸。 至少部分地在翅片式有源图案的第一部分上形成沿与第一方向不同的第二方向延伸的栅电极。 第一源极/漏极形成在鳍式有源图案的第三部分上。

公开(公告)号：US09110100B2

公开(公告)日：2015-08-18

申请号：US13335875

申请日：2011-12-22

申请人： Tae-Jong Lee ,  Ben Lim

发明人： Tae-Jong Lee ,  Ben Lim

IPC分类号： H02J7/00 ,  H05K5/00 ,  H05K1/18 ,  G01R1/20 ,  G01R31/36 ,  H01C3/12

CPC分类号： G01R1/20 ,  G01R31/3606 ,  H01C3/12 ,  H02J7/007

摘要： A circuit module of a battery pack includes a pattern resistor having conductivity; a temperature sensor that is adjacent to the pattern resistor and that senses a temperature of the pattern resistor; and a current detecting unit that is electrically connected to both ends of the pattern resistor, that is electrically connected to the temperature sensor, and that detects a current flowing in the pattern resistor based on a voltage across the ends of the pattern resistor and a temperature of the pattern resistor.

摘要翻译： 电池组的电路模块包括具有导电性的图案电阻器; 温度传感器，其与图案电阻器相邻并且感测图案电阻器的温度; 以及电流检测单元，其电连接到图案电阻器的两端，其电连接到温度传感器，并且基于图案电阻器的两端的电压检测在图案电阻器中流动的电流，并且温度 的图案电阻。

公开(公告)号：US20160307927A1

公开(公告)日：2016-10-20

申请号：US14993212

申请日：2016-01-12

申请人： Jung-Han Lee ,  Jae-Hwan Lee ,  Sang-Su Kim ,  Hwan-Wook Choi ,  Tae-Jong Lee ,  Seung-Mo Ha

发明人： Jung-Han Lee ,  Jae-Hwan Lee ,  Sang-Su Kim ,  Hwan-Wook Choi ,  Tae-Jong Lee ,  Seung-Mo Ha

IPC分类号： H01L27/12 ,  H01L29/06 ,  H01L27/088

CPC分类号： H01L29/0657 ,  H01L21/823431 ,  H01L21/823468 ,  H01L27/0886

摘要： A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

摘要翻译： 半导体器件包括由衬底上的隔离层限定的多个有源散热片，活性散热片上的栅极结构和隔离层，以及覆盖栅极结构的侧壁的栅极间隔结构。 栅极结构的侧壁分别包括具有第一，第二和第三斜率的第一，第二和第三区域。 第二斜坡从底部向第二区域的顶部增加。 第二斜坡在第二区域的底部具有小于第一斜坡的值。 第三斜率大于第二斜率。

公开(公告)号：US20120262123A1

公开(公告)日：2012-10-18

申请号：US13335875

申请日：2011-12-22

申请人： Tae-Jong Lee ,  Ben Lim

发明人： Tae-Jong Lee ,  Ben Lim

IPC分类号： H02J7/00 ,  G01R1/20

CPC分类号： G01R1/20 ,  G01R31/3606 ,  H01C3/12 ,  H02J7/007

摘要： A circuit module of a battery pack includes a pattern resistor having conductivity; a temperature sensor that is adjacent to the pattern resistor and that senses a temperature of the pattern resistor; and a current detecting unit that is electrically connected to both ends of the pattern resistor, that is electrically connected to the temperature sensor, and that detects a current flowing in the pattern resistor based on a voltage across the ends of the pattern resistor and a temperature of the pattern resistor.

摘要翻译： 电池组的电路模块包括具有导电性的图案电阻器; 温度传感器，其与图案电阻器相邻并且感测图案电阻器的温度; 以及电流检测单元，其电连接到图案电阻器的两端，其电连接到温度传感器，并且基于图案电阻器两端的电压检测在图案电阻器中流动的电流，并且温度 的图案电阻。

公开(公告)号：US20110222207A1

公开(公告)日：2011-09-15

申请号：US13064241

申请日：2011-03-14

申请人： Tae-Jong Lee ,  Jae-Young Park ,  Jong-Bom Seo ,  Seok-Woo Nam ,  Bong-Hyun Kim ,  Han-Jin Lim ,  Seung-Sik Chung

发明人： Tae-Jong Lee ,  Jae-Young Park ,  Jong-Bom Seo ,  Seok-Woo Nam ,  Bong-Hyun Kim ,  Han-Jin Lim ,  Seung-Sik Chung

IPC分类号： H01G4/10 ,  H01G7/00 ,  B05D5/12

CPC分类号： H01G4/10 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/56 ,  H01G13/00 ,  Y10T29/43

摘要： In a method of forming a dielectric layer structure, a precursor thin film chemisorbed on a substrate in a process chamber is formed using a source gas including a metal precursor. The process chamber is purged and pumped out to remove a remaining source gas therein and to remove any metal precursor physisorbed on the precursor thin film. The forming of the precursor thin film and the purging and pumping out of the process chamber are alternately and repeatedly performed to form a multi-layer precursor thin film. An oxidant is provided onto the multilayer precursor thin film to form a bulk oxide layer.

摘要翻译： 在形成电介质层结构的方法中，使用包括金属前体的源气体来形成化学吸附在处理室中的衬底上的前体薄膜。 将处理室吹扫并抽出以除去其中的剩余源气体并除去在前体薄膜上物理吸附的任何金属前体。 交替地重复进行前体薄膜的形成和处理室的清洗和泵送，以形成多层前体薄膜。 在多层前体薄膜上提供氧化剂以形成体氧化物层。