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    Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same
    6.
    发明授权
    Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same 有权
    制造非晶NiO薄膜的方法和使用其的非易失性存储器件

    公开(公告)号：US07663136B2

    公开(公告)日：2010-02-16

    申请号：US11505968

    申请日：2006-08-18

    申请人： Sung-Ho Park ,  Bum-Seok Seo ,  Myoung-Jae Lee ,  June-Mo Koo ,  Sun-Ae Seo ,  Young-Kwan Cha

    发明人： Sung-Ho Park ,  Bum-Seok Seo ,  Myoung-Jae Lee ,  June-Mo Koo ,  Sun-Ae Seo ,  Young-Kwan Cha

    IPC分类号： H01L29/06

    CPC分类号： H01L27/115 ,  C23C16/406 ,  C23C16/45553 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

    摘要： Example embodiments relate to a method of manufacturing amorphous NiO thin films and nonvolatile memory devices including amorphous thin films that use a resistance material. Other example embodiments relate to a method of manufacturing amorphous NiO thin films having improved switching and resistance characteristics by reducing a leakage current and non-volatile memory devices using an amorphous NiO thin film. Provided is a method of manufacturing an amorphous NiO thin film having improved switching behavior by reducing leakage current and improving resistance characteristics. The method may include preparing a substrate in a vacuum chamber, preparing a nickel precursor material, preparing a source gas by vaporizing the nickel precursor material, preparing a reaction gas, preparing a purge gas and forming a monolayer NiO thin film on the substrate by performing one cycle of sequentially supplying the source gas, the purge gas, the reaction gas and the purge gas into the vacuum chamber.

    摘要翻译： 示例性实施例涉及制造非晶NiO薄膜的方法和包括使用电阻材料的非晶薄膜的非易失性存储器件。 其他示例实施例涉及通过减少漏电流而制造具有改进的开关和电阻特性的非晶NiO薄膜的方法，以及使用非晶态NiO薄膜的非易失性存储器件。 提供了通过减少漏电流和改善电阻特性来制造具有改进的开关行为的非晶NiO薄膜的方法。 该方法可以包括在真空室中准备衬底，制备镍前体材料，通过汽化镍前体材料制备源气体，制备反应气体，制备吹扫气体，并在衬底上形成单层NiO薄膜，通过执行 将源气体，净化气体，反应气体和吹扫气体依次供给到真空室中的一个循环。

    Method of manufacturing amorphous NIO thin films and nonvolatile memory devices using the same
    7.
    发明申请
    Method of manufacturing amorphous NIO thin films and nonvolatile memory devices using the same 有权
    制造非晶NIO薄膜的方法和使用其的非易失性存储器件

    公开(公告)号：US20070065961A1

    公开(公告)日：2007-03-22

    申请号：US11505968

    申请日：2006-08-18

    申请人： Sung-Ho Park ,  Bum-Seok Seo ,  Myoung-Jae Lee ,  June-Mo Koo ,  Sun-Ae Seo ,  Young-Kwan Cha

    发明人： Sung-Ho Park ,  Bum-Seok Seo ,  Myoung-Jae Lee ,  June-Mo Koo ,  Sun-Ae Seo ,  Young-Kwan Cha

    IPC分类号： H01L21/00

    CPC分类号： H01L27/115 ,  C23C16/406 ,  C23C16/45553 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

    摘要： Example embodiments relate to a method of manufacturing amorphous NiO thin films and nonvolatile memory devices including amorphous thin films that use a resistance material. Other example embodiments relate to a method of manufacturing amorphous NiO thin films having improved switching and resistance characteristics by reducing a leakage current and non-volatile memory devices using an amorphous NiO thin film. Provided is a method of manufacturing an amorphous NiO thin film having improved switching behavior by reducing leakage current and improving resistance characteristics. The method may include preparing a substrate in a vacuum chamber, preparing a nickel precursor material, preparing a source gas by vaporizing the nickel precursor material, preparing a reaction gas, preparing a purge gas and forming a monolayer NiO thin film on the substrate by performing one cycle of sequentially supplying the source gas, the purge gas, the reaction gas and the purge gas into the vacuum chamber.

    摘要翻译： 示例性实施例涉及制造非晶NiO薄膜的方法和包括使用电阻材料的非晶薄膜的非易失性存储器件。 其他示例实施例涉及通过减少漏电流而制造具有改进的开关和电阻特性的非晶NiO薄膜的方法，以及使用非晶态NiO薄膜的非易失性存储器件。 提供了通过减少漏电流和改善电阻特性来制造具有改进的开关行为的非晶NiO薄膜的方法。 该方法可以包括在真空室中准备衬底，制备镍前体材料，通过汽化镍前体材料制备源气体，制备反应气体，制备吹扫气体并通过执行在衬底上形成单层NiO薄膜 将源气体，净化气体，反应气体和吹扫气体依次供给到真空室中的一个循环。