摘要:
Disclosed is a method for preparing cerium carbonate that can prepare cerium carbonate having uniform crystal structure, shape and size with high productivity. The method for preparing cerium carbonate comprises: continuously introducing a reaction solution comprising cerium precursor and urea in a tubular reactor including an inlet, an outlet, and one or more reaction tubes through the inlet; reacting the cerium precursor with urea at an elevated temperature in the reaction tube; and, continuously discharging cerium carbonate formed by the reaction of the cerium precursor and urea to the outlet.
摘要:
The present invention relates to crystalline cerium oxide prepared in a simple, economical, and efficient manner, of which crystal structure, shape, and size can be easily adjusted and that exhibits excellent polishing properties, and a preparation method thereof. The crystalline cerium oxide can be prepared as sub-micron crystalline cerium oxide that has a mean volume diameter and a diameter standard deviation within a predetermined range.
摘要:
Disclosed is a method for preparing cerium carbonate that can improve yield or productivity of cerium carbonate and enables preparation of cerium carbonate having uniform diameter, cerium carbonate, and a method for preparing cerium oxide.The method for preparing cerium carbonate comprises mixing the cerium precursor with urea; and, elevating the temperature of the mixture to 50° C. or more in the absence of a separate reaction medium to react the cerium precursor with urea in the presence of a polymer dispersant.
摘要:
The present invention relates to a method for preparing cerium oxide which enables preparation of cerium oxide showing improved polishing performance, cerium oxide prepared therefrom, and CMP slurry comprising the same.The method for preparing cerium oxide comprises the step of contacting cerium oxide with primary alcohol to increase specific surface area of the cerium oxide 10% or more.
摘要:
The present invention relates to a method for preparing cerium oxide which enables preparation of cerium oxide showing improved polishing performance, cerium oxide prepared therefrom, and CMP slurry comprising the same.The method for preparing cerium oxide comprises the step of contacting cerium oxide with primary alcohol to increase specific surface area of the cerium oxide 10% or more.
摘要:
The present invention relates to a method for preparing cerium carbonate which enables preparation of hexagonal cerium carbonate by a simplified process, a cerium carbonate powder prepared thereby, and a method for preparing a cerium oxide powder using the same.The method for preparing cerium carbonate comprises the step of contact-reacting orthorhombic cerium carbonate with a primary alcohol aqueous solution comprising water and primary alcohol at a weight ratio of 1:0.1 or more at a temperature of 160° C. or more to form hexagonal cerium carbonate.
摘要:
The present invention relates to a method for preparing cerium carbonate which enables preparation of hexagonal cerium carbonate by a simplified process, a cerium carbonate powder prepared thereby, and a method for preparing a cerium oxide powder using the same.The method for preparing cerium carbonate comprises the step of contact-reacting orthorhombic cerium carbonate with a primary alcohol aqueous solution comprising water and primary alcohol at a weight ratio of 1:0.1 or more at a temperature of 160° C. or more to form hexagonal cerium carbonate.
摘要:
The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.
摘要:
The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.
摘要:
In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.