公开(公告)号：US07745233B2

公开(公告)日：2010-06-29

申请号：US12289494

申请日：2008-10-29

申请人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

发明人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/417

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

摘要翻译： 铁电电容器包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。 铁电存储器包括衬底和布置在衬底上的多个存储单元。 每个存储单元包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。

公开(公告)号：US07459736B2

公开(公告)日：2008-12-02

申请号：US10978795

申请日：2004-11-02

申请人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

发明人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/417

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

摘要翻译： 铁电电容器包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。 铁电存储器包括衬底和布置在衬底上的多个存储单元。 每个存储单元包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。

公开(公告)号：US20080038846A1

公开(公告)日：2008-02-14

申请号：US11878868

申请日：2007-07-27

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L21/8246

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US07250649B2

公开(公告)日：2007-07-31

申请号：US11120184

申请日：2005-05-03

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L29/76

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US20060001070A1

公开(公告)日：2006-01-05

申请号：US11120184

申请日：2005-05-03

申请人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

发明人： Young-soo Park ,  Jung-hyun Lee ,  Choong-rae Cho ,  June-mo Koo ,  Suk-pil Kim ,  Sang-min Shin

IPC分类号： H01L21/00 ,  H01L27/108

CPC分类号： H01L28/91 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.

摘要翻译： 存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸 沿着下电极和形成在铁电层上的上电极。

公开(公告)号：US20090098697A1

公开(公告)日：2009-04-16

申请号：US12289494

申请日：2008-10-29

申请人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

发明人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

IPC分类号： H01L21/71 ,  H01G9/004

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/417

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

摘要翻译： 铁电电容器包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。 铁电存储器包括衬底和布置在衬底上的多个存储单元。 每个存储单元包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。

公开(公告)号：US20080210998A1

公开(公告)日：2008-09-04

申请号：US12068172

申请日：2008-02-04

申请人： June-mo Koo ,  Bum-seok Seo ,  Young-soo Park ,  Jung-hyun Lee ,  Sang-min Shin ,  Suk-pil Kim

发明人： June-mo Koo ,  Bum-seok Seo ,  Young-soo Park ,  Jung-hyun Lee ,  Sang-min Shin ,  Suk-pil Kim

IPC分类号： H01L29/92 ,  H01L21/8246

CPC分类号： H01L21/02197 ,  H01L21/0228 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.

摘要翻译： 提供一种能够提高强电介质层上的贵金属层的沉积速度的材料层的制造方法，使用该材料的铁电电容器的制造方法，通过相同的方法制造的铁电电容器以及半导体存储器件 具有铁电电容器及其制造方法。 根据材料层的制造方法，形成铁电体层。 可以将铁电层暴露于种子等离子体，并且可以在暴露于种子等离子体的铁电层的区域上形成包括种子等离子体的源材料的材料层。

公开(公告)号：US20070012974A1

公开(公告)日：2007-01-18

申请号：US11484582

申请日：2006-07-12

申请人： June-mo Koo ,  Bum-seok Seo ,  Young-soo Park ,  Jung-hyun Lee ,  Sang-min Shin ,  Suk-pil Kim

发明人： June-mo Koo ,  Bum-seok Seo ,  Young-soo Park ,  Jung-hyun Lee ,  Sang-min Shin ,  Suk-pil Kim

IPC分类号： H01L29/94

CPC分类号： H01L21/02197 ,  H01L21/0228 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.

摘要翻译： 提供一种能够提高强电介质层上的贵金属层的沉积速度的材料层的制造方法，使用该材料的铁电电容器的制造方法，通过相同的方法制造的铁电电容器以及半导体存储器件 具有铁电电容器及其制造方法。 根据材料层的制造方法，形成铁电体层。 可以将铁电层暴露于种子等离子体，并且可以在暴露于种子等离子体的铁电层的区域上形成包括种子等离子体的源材料的材料层。

公开(公告)号：US20060022236A1

公开(公告)日：2006-02-02

申请号：US10978795

申请日：2004-11-02

申请人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

发明人： Sang-min Shin ,  Suk-pil Kim ,  Young-soo Park ,  Jung-hyun Lee ,  June-mo Koo

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/417

摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

公开(公告)号：US20080272366A1

公开(公告)日：2008-11-06

申请号：US12010806

申请日：2008-01-30

申请人： Chang-wook Moon ,  Joong S. Jeon ,  Jung-hyun Lee ,  Nae-in Lee ,  Yeon-sik Park ,  Hwa-sung Rhee ,  Ho Lee ,  Se-young Cho ,  Suk-pil Kim

发明人： Chang-wook Moon ,  Joong S. Jeon ,  Jung-hyun Lee ,  Nae-in Lee ,  Yeon-sik Park ,  Hwa-sung Rhee ,  Ho Lee ,  Se-young Cho ,  Suk-pil Kim

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02356 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

摘要： A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate oxide layer formed on a silicon substrate, at least one nanorod embedded in the gate oxide layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate oxide layer between the source electrode and the drain electrode.

摘要翻译： 提供具有至少一个Ge纳米棒的场效应晶体管和制造场效应晶体管的方法。 场效应晶体管可以包括形成在硅衬底上的栅氧化层，至少一个纳米棒嵌入在其两端被暴露的栅极氧化层中，源电极和漏极连接到至少一个Ge纳米棒的相对侧 以及形成在源电极和漏电极之间的栅氧化层上的栅电极。