公开(公告)号：US08873131B2

公开(公告)日：2014-10-28

申请号：US13533353

申请日：2012-06-26

Applicant: Seung-hoon Han ,  Wan-joo Maeng ,  Sang-yoon Lee ,  Hong-seok Lee

Inventor： Seung-hoon Han ,  Wan-joo Maeng ,  Sang-yoon Lee ,  Hong-seok Lee

IPC: G02F1/33 ,  G02F1/00

CPC classification number: G02F1/33 ,  G01N29/2418 ,  G01N29/34 ,  G02F1/0072 ,  G02F2202/32 ,  G02F2203/10 ,  G03H1/2294 ,  G03H2001/0224 ,  G03H2225/21

Abstract: An acousto-optic device includes an acousto-optic medium having a multi-layer nanostructure; and a sonic wave generator configured to apply sonic waves to the acousto-optic medium having the multi-layer nanostructure. The acousto-optic medium having the multi-layer nanostructure includes a second layer formed of at least two materials that have different dielectric constants and alternate with each other; and a first layer disposed on a first surface of the second layer and formed of a first material, and/or a third layer disposed on a second surface of the second layer and formed of a fourth material.

Abstract translation: 声光装置包括具有多层纳米结构的声光介质; 以及声波发生器，被配置为将声波施加到具有多层纳米结构的声光介质。 具有多层纳米结构的声光介质包括由至少两种具有不同介电常数且彼此交替的材料形成的第二层; 以及设置在第二层的第一表面上并由第一材料形成的第一层和/或设置在第二层的第二表面上并由第四材料形成的第三层。

公开(公告)号：US08866136B2

公开(公告)日：2014-10-21

申请号：US12805379

申请日：2010-07-28

Applicant: Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

Inventor： Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

IPC: H01L29/10 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

Abstract translation: 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。 钝化层可以具有依次层叠的包括氧化硅层，氮氧化硅层和氮化硅层的多层结构。 沟道层可以包括氧化物半导体。

公开(公告)号：US08680539B2

公开(公告)日：2014-03-25

申请号：US13304952

申请日：2011-11-28

Applicant: Hong-shik Shim ,  In-seo Kee ,  Sang-yoon Lee

Inventor： Hong-shik Shim ,  In-seo Kee ,  Sang-yoon Lee

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L51/5246 ,  H01L25/048 ,  H01L27/3293 ,  H01L51/5262 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A foldable display includes a first plate, a second plate, a first protecting window, a second protecting window, a soft material layer and an intermediate layer which controls brightness. The first plate includes a thin film transistor and an organic light emitting diode (“OLED”), and displays at least one portion of an image to be displayed. The second plate includes a thin film transistor and an OLED, and displays a second portion different from the first portion of the image. The first protecting window is on the first plate. The second protecting window is on the second plate. The soft material layer is between the first and second protecting windows. The intermediate layer is between the soft material layer and a side surface of the first protecting window, and between the soft material layer and the second protecting window.

Abstract translation: 可折叠显示器包括第一板，第二板，第一保护窗，第二保护窗，软材料层和控制亮度的中间层。 第一板包括薄膜晶体管和有机发光二极管（“OLED”），并且显示要显示的图像的至少一部分。 第二板包括薄膜晶体管和OLED，并且显示与图像的第一部分不同的第二部分。 第一个保护窗在第一块板上。 第二个保护窗在第二个板上。 柔软的材料层位于第一和第二保护窗之间。 中间层在软质材料层和第一保护窗的侧表面之间以及软材料层和第二保护窗之间。

公开(公告)号：US20130140551A1

公开(公告)日：2013-06-06

申请号：US13550752

申请日：2012-07-17

Applicant: Joon-seok Park ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee ,  Seok-jun Seo

Inventor： Joon-seok Park ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee ,  Seok-jun Seo

IPC: H01L29/78 ,  B32B3/26 ,  H01L21/336

CPC classification number: B32B3/26 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869 ,  Y10T428/24479

Abstract: A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.

Abstract translation: 晶体管可以包括由氧化物半导体形成的沟道层。 氧化物半导体可以包括GaZnON，并且沟道层的Ga含量与Ga和Zn的总含量的比例为约0.5至约4.5原子％。

公开(公告)号：US08395155B2

公开(公告)日：2013-03-12

申请号：US12929453

申请日：2011-01-26

Applicant: Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

Inventor： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

IPC: H01L29/10

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78696

Abstract: Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.

Abstract translation: 薄膜晶体管（TFT）及其制造方法。 TFT可以包括在沟道的表面上并与源极和漏极间隔开的浮动沟道，以及形成在浮动沟道上并被设计成确定浮动沟道与源极或漏极之间的距离的绝缘层。

公开(公告)号：US08378342B2

公开(公告)日：2013-02-19

申请号：US12659837

申请日：2010-03-23

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract translation: 提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。 氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

公开(公告)号：US20130034708A1

公开(公告)日：2013-02-07

申请号：US13565943

申请日：2012-08-03

Applicant: Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

Inventor： Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

IPC: B05C11/00 ,  B32B7/02 ,  B05D5/12

CPC classification number: H01L21/6715 ,  H01L21/67098 ,  Y10T428/24942 ,  Y10T428/265

Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0.

Abstract translation: 制备薄膜的方法包括在基材上涂覆薄膜形成组合物，并在低于760托的压力下对涂覆的薄膜形成组合物进行热处理。 该薄膜包括厚度在大于大至大约20,000范围内的折射率在约1.85至约2.0范围内的致密层。

公开(公告)号：US20120223288A1

公开(公告)日：2012-09-06

申请号：US13295620

申请日：2011-11-14

Applicant: Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

IPC: H01L29/66 ,  B82Y99/00

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/775 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0554 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0579 ,  H01L51/424 ,  Y02E10/549 ,  Y02P70/521

Abstract: An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).

Abstract translation: 示例性实施例涉及包括沟道层的晶体管。 晶体管的沟道层可以包括在垂直方向上彼此间隔开的多个单位层。 每个单元层可以包括在水平方向上彼此间隔开的多个单位通道。 每个单元层中的单位通道可以形成条纹图案。 每个单位通道可以包括多个纳米结构。 每个纳米结构可以具有纳米管或纳米线结构，例如碳纳米管（CNT）。

公开(公告)号：US08124979B2

公开(公告)日：2012-02-28

申请号：US12032007

申请日：2008-02-15

Applicant: Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

Inventor： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

IPC: H01L27/14

CPC classification number: H01L29/78621 ,  H01L29/42384 ,  H01L2029/7863

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。

公开(公告)号：US07682882B2

公开(公告)日：2010-03-23

申请号：US12153674

申请日：2008-05-22

Applicant: Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

Abstract translation: 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。