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1.发明授权Substrate processing device, substrate conveying device, and substrate processing method 失效基板处理装置，基板输送装置及基板处理方法公开(公告)号：US06742977B1
公开(公告)日：2004-06-01
申请号：US09503916
申请日：2000-02-15
申请人： Satohiro Okayama , Motoichi Kanazawa , Takeshige Ishida , Tomohiko Takeda , Yukio Akita , Satoru Ichimura , Kazunori Suzuki , Teruo Yoshino , Tokunobu Akao , Yasunobu Nakayama
发明人： Satohiro Okayama , Motoichi Kanazawa , Takeshige Ishida , Tomohiko Takeda , Yukio Akita , Satoru Ichimura , Kazunori Suzuki , Teruo Yoshino , Tokunobu Akao , Yasunobu Nakayama
IPC分类号： H01L2168
CPC分类号： H01L21/67742 , H01L21/67745 , H01L21/67748 , Y10S414/135 , Y10S414/14
摘要： An unprocessed substrate is conveyed to a film-processing chamber at the same time a processed substrate is conveyed to a substrate preparation chamber, reducing the substrate processing cycle, thereby increasing the yield per unit time. The substrate preparation chamber has a two-tiered structure for receiving processed substrates and unprocessed substrates. A two-tiered transfer robot allows the substrates to be removed or placed into the preparation and process chambers at the same time, thus decreasing the cycle time for processing a substrate.
摘要翻译： 将未处理的基板输送到膜处理室，同时将处理后的基板输送到基板准备室，减少基板处理循环，从而提高单位时间的产量。 衬底制备室具有用于接收经处理的衬底和未处理衬底的双层结构。 双层传送机器人可以将基板同时移除或放置在准备和处理室中，从而减少加工基板的循环时间。
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公开(公告)号：US07767053B2
公开(公告)日：2010-08-03
申请号：US11984186
申请日：2007-11-14
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32174 , H01J37/32082 , H01J2237/0206
摘要： To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted. A controller 130 determines the generation of a harmful micro arc, when coincidence of three detection signals outputted from the detector 122 is obtained, supplies an RF cut signal to a CPU 116, and temporarily stops or temporarily decreases a high frequency power from the high frequency power source 111.
摘要翻译： 通过检测微弧的产生，有效地防止微弧对装置和基板造成损害。 基板处理装置被构成为通过经由匹配单元300从高频电源部件100向设置在处理室200中的电极210施加高频电力来产生等离子体P.定向耦合器121被提供 在高频电源111和匹配单元300之间，使得从电极210反射的反射波和向电极210前进的行波耦合到检测器122.检测器122输出检测信号，当电平 的反射波Pr及其差分电平超过每个设定值。 为了在检测周期内放置初始放电周期，也输出作为延迟行波的延迟行波。 当获得从检测器122输出的三个检测信号的一致时，控制器130确定有害的微弧的产生，向CPU 116提供RF切断信号，并从高频临时停止或暂时降低高频功率 电源111。
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公开(公告)号：US20080075640A1
公开(公告)日：2008-03-27
申请号：US11984186
申请日：2007-11-14
CPC分类号： H01J37/32174 , H01J37/32082 , H01J2237/0206
摘要： To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted. A controller 130 determines the generation of a harmful micro arc, when coincidence of three detection signals outputted from the detector 122 is obtained, supplies an RF cut signal to a CPU 116, and temporarily stops or temporarily decreases a high frequency power from the high frequency power source 111.
摘要翻译： 通过检测微弧的产生，有效地防止微弧对装置和基板造成损害。 基板处理装置被构成为通过经由匹配单元300从高频电源部件100向设置在处理室200中的电极210施加高频电力来产生等离子体P. 定向耦合器121设置在高频电源111和匹配单元300之间，使得从电极210反射的反射波和向电极210前进的行波耦合到检测器122。 当反射波Pr和其差分电平的电平超过每个设定值时，检测器122输出检测信号。 为了在检测周期内放置初始放电周期，也输出作为延迟行波的延迟行波。 当获得从检测器122输出的三个检测信号的一致时，控制器130确定有害的微弧的产生，向CPU 116提供RF切断信号，并从高频临时停止或暂时降低高频功率 电源111。
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公开(公告)号：US20060252283A1
公开(公告)日：2006-11-09
申请号：US10549279
申请日：2004-08-04
IPC分类号： H01L21/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J2237/0206
摘要： To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted. A controller 130 determines the generation of a harmful micro arc, when coincidence of three detection signals outputted from the detector 122 is obtained, supplies an RF cut signal to a CPU 116, and temporarily stops or temporarily decreases a high frequency power from the high frequency power source 111.
摘要翻译： 通过检测微弧的产生，有效地防止微弧对装置和基板造成损害。 基板处理装置被构成为通过经由匹配单元300从高频电源部件100向设置在处理室200中的电极210施加高频电力来产生等离子体P.定向耦合器121被提供 在高频电源111和匹配单元300之间，使得从电极210反射的反射波和向电极210前进的行波耦合到检测器122.检测器122输出检测信号，当电平 的反射波Pr及其差分电平超过每个设定值。 为了在检测周期内放置初始放电周期，也输出作为延迟行波的延迟行波。 当获得从检测器122输出的三个检测信号的一致时，控制器130确定有害的微弧的产生，向CPU 116提供RF切断信号，并从高频临时停止或暂时降低高频功率 电源111。
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公开(公告)号：US5170334A
公开(公告)日：1992-12-08
申请号：US774848
申请日：1991-10-11
申请人： Katsuro Ito , Teruo Yoshino
发明人： Katsuro Ito , Teruo Yoshino
摘要： In a control apparatus for controlling the firing timing of each of thyristor valves constituting a thryistor bridge by use of at least two series of control systems, a bypass-pair control circuit for thyristor bridge includes a circuit for detecting the conduction states of the thyristor valves, and a circuit for determining a conductive valve at the time of bypass-pair operation in accordance with a result of detection of the conduction state of each thyristor valve.
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公开(公告)号：US4859884A
公开(公告)日：1989-08-22
申请号：US216538
申请日：1988-07-08
申请人： Teruo Yoshino
发明人： Teruo Yoshino
IPC分类号： C08G79/02 , H02H7/12 , H02J3/18 , H02M1/08 , H02M1/088 , H02M1/092 , H03K17/0812 , H03K17/292
CPC分类号： H02M1/092 , H02H7/1206 , H02J3/1864 , H03K17/08124 , Y02E40/12
摘要： A gate signal generator comprises U- and X-phase set circuits for discriminating, after the conduction period of every cycle, whether OFF time intervals of U- and X-phase thyristors are greater or smaller than a predetermined value, a reset circuit for detecting that both the U- and X-phase circuits do not provide outputs, a flip-flop set in response to an output from the U- or X-phase set circuit and reset in response to an output from the reset circuit, AND gates for calculating AND products of an output from the flip-flop and U- and X-phase forward voltage signals and for outputting the signals at a start of the forward voltage application after setting the flip-flop, and OR gates for calculating OR sums of outputs from the AND gates and outputs from the normal gate circuits. Gate signals are applied to the thyristors in response to the outputs from the OR gates.
摘要翻译： 一个门信号发生器包括U相和X相设置电路（6U，6X SIM 8U，8X），用于在每个周期的导通周期之后，判断U相和X相晶闸管的关闭时间间隔（TN）（3U ，3X）大于或小于预定值;用于检测U相和X相电路（6-8）都不提供输出的复位电路（9），响应中设置的触发器（10） 耦合到来自U相或X相设置电路（6-8）的输出（FFS）并且响应于来自复位电路（9）的输出（FFR）复位，用于计算AND产物的与门（70V，70X） 来自触发器（10）的输出（FF）和U相和X相正向电压信号（FVU，FVX），并在用于在正向电压施加开始时输出信号（F70U，F70X） 触发器（10）和用于从与门（70U，70X）输出的输出（F70U，F70X）的OR和和来自普通门电路（5U，5X）的输出（GP5U，GP5X）的OR门（80U，80X） ）。 响应于来自OR门（80U，80X）的输出（GPU，GPX），门控信号（GPU，GPX）被施加到晶闸管（3U，3X）。
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公开(公告)号：US5410464A
公开(公告)日：1995-04-25
申请号：US158275
申请日：1993-11-29
申请人： Teruo Yoshino
发明人： Teruo Yoshino
摘要： A voltage-type self-commutated conversion system including a voltage-type self-commutated power converter with a plurality of anti-parallel circuits of a self-turn-off device and a diode. DC terminals of the power converter are connected to DC bus lines of the voltage-type self-commutated conversion system. The voltage-type self-commutated conversion system further includes a DC capacitor connected between the DC bus lines, a transformer connected between an AC system and AC terminals of the power converter and a control circuit for controlling the power converter. The control circuit includes a gate control circuit for generating gate signals for determining conduction periods of the self-turn-off devices in the power converter, a first protection circuit for turning on the self-turn-off devices connected to positive side of the DC bus line in case of protective shutdown of the power converter and a second protection circuit for turning off the self-turn-off devices connected to negative side of the DC bus line in case of the protective shutdown of the power converter.
摘要翻译： 一种电压型自换向转换系统，包括具有自关断装置的多个反并联电路的电压型自换向功率转换器和二极管。 电源转换器的直流端子连接到电压型自整流转换系统的直流母线。 电压型自换向系统还包括连接在DC总线之间的直流电容器，连接在AC系统和功率转换器的AC端子之间的变压器以及用于控制功率转换器的控制电路。 控制电路包括用于产生用于确定功率转换器中的自熄电装置的导通周期的栅极信号的栅极控制电路，用于接通连接到DC的正极侧的自熄电装置的第一保护电路 在电源转换器的保护关闭的情况下，在电源转换器的保护关闭的情况下的总线以及用于在连接到DC总线的负极侧的自熄电装置的第二保护电路。
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公开(公告)号：US09236246B2
公开(公告)日：2016-01-12
申请号：US13409783
申请日：2012-03-01
CPC分类号： H01L21/324 , C23C16/46 , C23C16/52 , H01J37/32669 , H01J37/32724 , H01L21/02247 , H01L21/02301 , H01L21/0262 , H01L21/30604 , H01L21/67115 , H01L21/67253 , H01L21/68742
摘要： The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate.The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.
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公开(公告)号：US08443484B2
公开(公告)日：2013-05-21
申请号：US12222653
申请日：2008-08-13
申请人： Yukio Ozaki , Teruo Yoshino , Satoru Takahata , Reizo Nunozawa
发明人： Yukio Ozaki , Teruo Yoshino , Satoru Takahata , Reizo Nunozawa
IPC分类号： A47L5/38
CPC分类号： H01L21/67017 , H01L21/67757
摘要： To automatically purge a transfer chamber by means of inert gas. There is provided a substrate processing apparatus including a controller that performs control so that a transfer chamber 102 connected to a processing chamber 202 for processing a substrate is purged by gas, the controller having a switching unit that switches a function of exhausting the gas in the transfer chamber 102 in a set direction, and a function of circulating the gas through the transfer chamber 102 in an inert gas atmosphere.
摘要翻译： 用惰性气体自动吹扫传送室。 提供了一种基板处理装置，其包括执行控制的控制器，使得连接到用于处理基板的处理室202的传送室102被气体清除，该控制器具有切换单元，该切换单元切换排气中的气体的功能 传送室102在设定方向上，并且具有使气体在惰性气体气氛中循环通过传送室102的功能。
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10.发明申请SUBSTRATE PROCESSING APPARATUS AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权基板加工装置及制造半导体装置的方法公开(公告)号：US20120225566A1
公开(公告)日：2012-09-06
申请号：US13409783
申请日：2012-03-01
IPC分类号： H01L21/31 , C23C16/455 , C23C16/40 , C23C16/52 , C23C16/46
CPC分类号： H01L21/324 , C23C16/46 , C23C16/52 , H01J37/32669 , H01J37/32724 , H01L21/02247 , H01L21/02301 , H01L21/0262 , H01L21/30604 , H01L21/67115 , H01L21/67253 , H01L21/68742
摘要： The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.
摘要翻译： 衬底的温度快速升高，同时提高衬底的温度均匀性。 将基板装载到处理室中，将负载的基板支撑在第一基板支撑单元上，向处理室供应气体，在第一基板支撑单元上支撑的基板的温度升高， 处理室中的压力高于衬底加载期间的压力或处理室中的压力升高至高于衬底表面处理期间的压力的状态，所述衬底支撑在第一衬底支撑单元上 转移到第二基板支撑单元并在经过预定时间之后被支撑在其上，并且在加热支撑在第二基板支撑单元上的基板的同时对基板的表面进行加工。
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