公开(公告)号：US07312558B2

公开(公告)日：2007-12-25

申请号：US11097924

申请日：2005-04-01

申请人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

发明人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC分类号： H01L41/187 ,  H01L41/04 ,  H01L41/16

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

摘要翻译： 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US20050218756A1

公开(公告)日：2005-10-06

申请号：US11097924

申请日：2005-04-01

申请人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

发明人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC分类号： B41J2/01 ,  B41J2/045 ,  B41J2/14 ,  B41J2/16 ,  G01C19/56 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

摘要翻译： 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US06326621B1

公开(公告)日：2001-12-04

申请号：US09323730

申请日：1999-06-01

申请人： Takeshi Kamada ,  Ryoichi Takayama ,  Satoru Fujii ,  Atsushi Tomozawa ,  Isaku Kanno

发明人： Takeshi Kamada ,  Ryoichi Takayama ,  Satoru Fujii ,  Atsushi Tomozawa ,  Isaku Kanno

IPC分类号： G01J502

CPC分类号： G01J5/20 ,  G01J5/34

摘要： The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.

摘要翻译： 本发明提供了一种紧凑且高性能的红外辐射探测器。 红外辐射检测器包含：基板; 以及选自热电型红外线辐射检测器单元，电阻辐射热计型红外线检测器单元和铁电测辐射热计型红外线检测器单元的至少两个红外线检测器单元，所述红外线检测器单元设置在同一侧 的基底。

公开(公告)号：US5868948A

公开(公告)日：1999-02-09

申请号：US724654

申请日：1996-10-01

申请人： Satoru Fujii ,  Ryoichi Takayama ,  Takeshi Kamada ,  Atsushi Tomozawa

发明人： Satoru Fujii ,  Ryoichi Takayama ,  Takeshi Kamada ,  Atsushi Tomozawa

IPC分类号： H01G4/12 ,  H01L37/02 ,  B44C1/22

CPC分类号： H01G4/12 ,  H01L37/02

摘要： A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.

摘要翻译： 公开了一种用于制造包括电容器，热电型红外线检测器等的电介质器件的方法。 该方法包括以下步骤：利用由氢氟酸和氧化剂组成的蚀刻剂来蚀刻形成在基板上的电介质膜以形成预定图案，并且用含有第一处理溶液的蚀刻层处理蚀刻层去除残留物 还原剂，随后用含有酸的第二处理溶液。

公开(公告)号：US5717157A

公开(公告)日：1998-02-10

申请号：US351216

申请日：1994-11-30

申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

IPC分类号： C04B35/472 ,  C23C14/08 ,  C23C14/34 ,  C30B23/02 ,  H01L37/02 ,  H01L41/316 ,  H01L35/22 ,  C04B35/491

CPC分类号： H01L41/316 ,  C04B35/472 ,  C23C14/08 ,  C23C14/3414 ,  C30B23/02 ,  C30B29/32 ,  H01L37/025

摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, �(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.

摘要翻译： 铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。 铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。 铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使 在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。 然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。 以这种方式，可以制造含有例如[（1-x）xPb1-yLayTi1-y / 4O3 + xxMgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。

公开(公告)号：US5406445A

公开(公告)日：1995-04-11

申请号：US216966

申请日：1994-03-24

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

IPC分类号： H01G4/20 ,  H01L29/04 ,  H01L23/48

CPC分类号： H01G4/20 ,  H01L2224/4918 ,  H01L2924/181

摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

摘要翻译： 将取向为（100）面的NaCl氧化物薄层或取向为（100）面的尖晶石氧化物薄层，朝向（100）面的钙钛矿电介质薄层和金属电极依次层压在金属电极上，从而提供 薄膜电容器。 或者，通过依次层叠取向于（100）面的氧化锌薄膜或取向为（100）面的尖晶石氧化物薄层，将铂薄层作为朝向（100）面的下部电极而制造薄膜电容器 取向为（100）面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 当采用真空沉积法，溅射法，CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层，尖晶石氧化物薄层和钙钛矿电介质薄层 形成金属电极。

公开(公告)号：US20050087689A1

公开(公告)日：2005-04-28

申请号：US10503328

申请日：2003-12-04

申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： G01J5/34 ,  H01L37/02 ,  G01J5/00

CPC分类号： G01J5/34 ,  H01L37/025

摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0

摘要翻译： 由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4） ）O 3（0

公开(公告)号：US5663089A

公开(公告)日：1997-09-02

申请号：US465350

申请日：1995-06-05

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01L21/70

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US5459635A

公开(公告)日：1995-10-17

申请号：US215816

申请日：1994-03-22

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01G4/10

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US5989395A

公开(公告)日：1999-11-23

申请号：US730315

申请日：1996-10-11

申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

IPC分类号： C04B35/472 ,  C23C14/08 ,  C23C14/34 ,  C30B23/02 ,  H01L37/02 ,  H01L41/316

CPC分类号： H01L41/316 ,  C04B35/472 ,  C23C14/08 ,  C23C14/3414 ,  C30B23/02 ,  C30B29/32 ,  H01L37/025

摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.MgO], where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.

摘要翻译： 铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。 铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。 铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使 在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。 然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。 以这种方式，可以制造含有例如[（1-x）.Pb1-yLayTi1-y / 4O3 + x.MgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。