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    NONVOLATILE MEMORY ELEMENT
    1.
    发明申请
    NONVOLATILE MEMORY ELEMENT 有权
    非易失性存储元件

    公开(公告)号：US20110233510A1

    公开(公告)日：2011-09-29

    申请号：US13132058

    申请日：2009-12-01

    申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    IPC分类号： H01L47/00

    CPC分类号： H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element of the present invention comprises a first electrode (103); a second electrode (109); and a resistance variable layer (106) disposed between the first electrode and the second electrode, resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the first electrode and the second electrode; at least one of the first electrode and the second electrode including a platinum-containing layer (107) comprising platinum; the resistance variable layer including at least a first oxygen-deficient transition metal oxide layer (104) which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer (105) which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer; x

    摘要翻译： 本发明的非易失性存储元件包括第一电极（103） 第二电极（109）; 以及设置在所述第一电极和所述第二电极之间的电阻变化层（106），所述电阻变化层的电阻值响应于施加在所述第一电极和所述第二电极之间的电信号而可逆地变化; 所述第一电极和所述第二电极中的至少一个包括含铂的含铂层（107） 所述电阻变化层至少包括不与所述含铂层物理接触的第一缺氧过渡金属氧化物层（104）和第二缺氧过渡金属氧化物层（105），所述第二缺氧过渡金属氧化物层（105）设置在所述第一 氧缺陷型过渡金属氧化物层和含铂层，并且与含铂层物理接触; 当第一缺氧过渡金属氧化物层中包含的缺氧过渡金属氧化物被表示为MOx时，x

    Nonvolatile memory element having a thin platinum containing electrode
    2.
    发明授权
    Nonvolatile memory element having a thin platinum containing electrode 有权
    具有薄铂电极的非易失性存储元件

    公开(公告)号：US08445885B2

    公开(公告)日：2013-05-21

    申请号：US13132058

    申请日：2009-12-01

    申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    IPC分类号： H01L29/02

    CPC分类号： H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MOx, and MOy, respectively, x

    摘要翻译： 非易失性存储元件包括第一和第二电极以及设置在它们之间的电阻变化层。 第一和第二电极中的至少一个包括含铂层。 电阻变化层包括不与含铂层物理接触的第一缺氧过渡金属氧化物层和设置在第一缺氧过渡金属氧化物层和第二缺氧过渡金属氧化物层之间的第二缺氧过渡金属氧化物层 所述含铂层并且与所述含铂层物理接触。 包含在第一和第二缺氧过渡金属氧化物层中的缺氧过渡金属氧化物分别表示为MOx，MOy分别表示为x

    NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT
    3.
    发明申请
    NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT 审中-公开
    非易失性存储器元件，非易失性存储器件以及将数据写入非易失性存储器元件的方法

    公开(公告)号：US20100188884A1

    公开(公告)日：2010-07-29

    申请号：US12667856

    申请日：2009-04-13

    申请人： Satoru Mitani ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Zhiqiang Wei ,  Takeshi Takagi

    发明人： Satoru Mitani ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Zhiqiang Wei ,  Takeshi Takagi

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element comprises a first electrode (503), a second electrode (505), and a resistance variable layer (504) disposed between the first electrode and the second electrode, a resistance value between the first electrode and the second electrode being switchable reversibly in response to positive and negative electric signals applied between the first electrode and the second electrode; wherein the resistance variable layer includes an oxygen-deficient hafnium oxide; wherein the first electrode and the second electrode comprise elements which are different from each other; and wherein a standard electrode potential V1 of an element forming the first electrode, a standard electrode potential V2 of an element forming the second electrode and a standard electrode potential V0 of hafnium satisfy a relationship of V1

    摘要翻译： 非易失性存储元件包括第一电极（503），第二电极（505）和设置在第一电极和第二电极之间的电阻变化层（504），第一电极和第二电极之间的电阻值可切换 响应于施加在第一电极和第二电极之间的正和负电信号而可逆地反转; 其中所述电阻变化层包括缺氧氧化铪; 其中所述第一电极和所述第二电极包括彼此不同的元件; 并且其中形成第一电极的元件的标准电极电位V1，形成第二电极的元件的标准电极电位V2和铪的标准电极电位V0满足V1

    NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND NONVOLATILE SEMICONDUCTOR APPARATUS
    6.
    发明申请
    NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND NONVOLATILE SEMICONDUCTOR APPARATUS 有权
    非易失性存储元件，非易失性存储器件和非易失性半导体器件

    公开(公告)号：US20100259966A1

    公开(公告)日：2010-10-14

    申请号：US12671162

    申请日：2009-05-18

    申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi

    发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) which is provided between the first electrode and the second electrode, and is configured to reversibly switch an interelectrode resistance value which is a resistance value between the first electrode and the second electrode, in response to an interelectrode voltage which is an electric potential of the second electrode on the basis of the first electrode, the resistance variable layer includes an oxygen-deficient transition metal oxide, the first electrode side and the second electrode side have an asymmetric structure, a portion of the resistance variable layer which is located at the first electrode side and a portion of the resistance variable layer which is located at the second electrode side are each configured to be selectively placed into one of a low-resistance state and a high-resistance state, so as to attain a stable state in three or more different interelectrode resistance values, the stable state being a state in which the interelectrode resistance value is invariable regardless of a change in the interelectrode voltage within a specified range.

    摘要翻译： 非易失性存储元件包括设置在第一电极和第二电极之间的第一电极（103），第二电极（105）和电阻变化层（104），并且被配置为可逆地切换电极间电阻值， 是第一电极和第二电极之间的电阻值，响应于基于第一电极的第二电极的电位的电极间电压，电阻变化层包括缺氧过渡金属氧化物， 第一电极侧和第二电极侧具有不对称结构，位于第一电极侧的电阻变化层的一部分和位于第二电极侧的电阻变化层的一部分分别构成为选择性地 放置成低电阻状态和高电阻状态之一，以达到三个或更多个差异的稳定状态 出现电极间电阻值，稳定状态是不管电极间电压在规定范围内的变化如何，电极间电阻值不变的状态。

    Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device
    7.
    发明授权
    Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device 有权
    非易失性存储元件，非易失性存储器件和非易失性半导体器件

    公开(公告)号：US08179713B2

    公开(公告)日：2012-05-15

    申请号：US12671162

    申请日：2009-05-18

    申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi

    发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) which is provided between the first electrode and the second electrode, and is configured to reversibly switch an interelectrode resistance value which is a resistance value between the first electrode and the second electrode, in response to an interelectrode voltage which is an electric potential of the second electrode on the basis of the first electrode, the resistance variable layer includes an oxygen-deficient transition metal oxide, the first electrode side and the second electrode side have an asymmetric structure, a portion of the resistance variable layer which is located at the first electrode side and a portion of the resistance variable layer which is located at the second electrode side are each configured to be selectively placed into one of a low-resistance state and a high-resistance state, so as to attain a stable state in three or more different interelectrode resistance values, the stable state being a state in which the interelectrode resistance value is invariable regardless of a change in the interelectrode voltage within a specified range.

    摘要翻译： 非易失性存储元件包括设置在第一电极和第二电极之间的第一电极（103），第二电极（105）和电阻变化层（104），并且被配置为可逆地切换电极间电阻值， 是第一电极和第二电极之间的电阻值，响应于基于第一电极的第二电极的电位的电极间电压，电阻变化层包括缺氧过渡金属氧化物， 第一电极侧和第二电极侧具有不对称结构，位于第一电极侧的电阻变化层的一部分和位于第二电极侧的电阻变化层的一部分分别构成为选择性地 放置成低电阻状态和高电阻状态之一，以达到三个或更多个差异的稳定状态 出现电极间电阻值，稳定状态是不管电极间电压在规定范围内的变化如何，电极间电阻值不变的状态。