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    Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method therefor
    7.
    发明授权
    Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method therefor 有权
    非易失性存储元件，非易失性半导体存储器件及其读取方法和写入方法

    公开(公告)号：US07965539B2

    公开(公告)日：2011-06-21

    申请号：US12516703

    申请日：2008-09-25

    申请人： Koichi Osano ,  Shunsaku Muraoka ,  Satoru Fujii ,  Kazuhiko Shimakawa

    发明人： Koichi Osano ,  Shunsaku Muraoka ,  Satoru Fujii ,  Kazuhiko Shimakawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  G11C7/1006 ,  G11C13/0007 ,  G11C2013/0076 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79

    摘要： A nonvolatile memory element (101) of the present invention includes a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.

    摘要翻译： 本发明的非易失性存储元件（101）包括介于第一电极（111）和第二电极（113）之间的电阻变化层（112），并且被配置为至少包含VI的金属元素的氧化物 组，V组或VI组，并且当在第一电压（111）和第二电压（113）之间施加特定电压的电脉冲时，电阻变化层转为具有第一高电阻状态或 其电阻值为高电阻值RH的第二高电阻状态或其电阻值为低电阻值RL的低电阻状态。

    NONVOLATILE MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS, AND READING METHOD AND WRITING METHOD THEREFOR
    8.
    发明申请
    NONVOLATILE MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS, AND READING METHOD AND WRITING METHOD THEREFOR 有权
    非易失性存储器元件，非易失性半导体存储器件及其读取方法及其写入方法

    公开(公告)号：US20100271859A1

    公开(公告)日：2010-10-28

    申请号：US12516703

    申请日：2008-09-25

    申请人： Koichi Osano ,  Shunsaku Muraoka ,  Satoru Fujii ,  Kazuhiko Shimakawa

    发明人： Koichi Osano ,  Shunsaku Muraoka ,  Satoru Fujii ,  Kazuhiko Shimakawa

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L27/101 ,  G11C7/1006 ,  G11C13/0007 ,  G11C2013/0076 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79

    摘要： A nonvolatile memory element (101) of the present invention comprises a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.

    摘要翻译： 本发明的非易失性存储元件（101）包括介于第一电极（111）和第二电极（113）之间的电阻变化层（112），并且被配置为至少包含VI的金属元素的氧化物 组，V组或VI组，并且当在第一电压（111）和第二电压（113）之间施加特定电压的电脉冲时，电阻变化层转为具有第一高电阻状态或 其电阻值为高电阻值RH的第二高电阻状态或其电阻值为低电阻值RL的低电阻状态。