摘要:
A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.
摘要:
A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed semiconductor wafer can be a silicon wafer having a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.
摘要:
A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.
摘要:
A carbon substrate manufacturing method includes a hot molding step, a burn-carbonizing step, a hot isostatical pressure treatment step, and a mirror polishing step. In the hot molding step, molding is performed while heating thermosetting resin powders to be a hard carbon substrate after burn-carbonizing, where the thermosetting resin powders are of a particle size 150 .mu.m or more, HPF 80-150 mm, a moisture content 1.0-3.0 weight %, Fe, Ni, Si and Ca respectively 5 ppm or less. In the burn-carbonizing process, a disk shaped resin molded body is filled into a graphite cylinder and burn-carbonized by heating from the external while the condition therefor is maintained in that the disk shaped resin molded body is stacked holding therein a graphite spacer at every one sheet basis or at every plurality of sheet basis and is loaded on its top with a tungsten carbide weight, where the graphite spacer has a heat conductivity 100 kcal/m.hr..degree. C. or less, a bulk density 1.70-1.85, and a flatness degree 10 .mu.m or less.
摘要:
To provide a drive unit and a drive module which include a shape memory alloy as a drive source to move a driven member and are capable of the high-precision movement of the driven member to a reference position. A drive unit and a drive module can be provided by controlling, in the drive unit and the drive module which include the shape memory alloy as the drive source to move the driven member, the shape memory alloy so that the resistance of the shape memory alloy is equal to the resistance when the driven member is located at the reference position.
摘要:
Provided is a Polar modulation apparatus which compensates for output characteristics of a power amplifier. A data generator generates an amplitude component signal and a phase component signal. A phase modulator generates a phase modulated signal obtained by phase modulating the phase component signal. An adder adds an amplitude offset voltage to the amplitude component signal. A power amplifier which includes a first hetero-junction bipolar transistor, amplifies the phase modulated signal by using the amplitude component signal. A monitor unit monitors the power amplifier and outputs a monitor voltage. The control unit calculates the amplitude offset voltage according to the monitor voltage and outputs the calculated amplitude offset voltage to the adder. The monitor unit includes a second hetero-junction bipolar transistor and outputs a collector emitter voltage of the second hetero-junction bipolar transistor as the monitor voltage.
摘要:
A drive device includes a setting unit 12 for setting a control value using a control value-displacement characteristic at a predetermined reference temperature showing a relationship between a control value used to position a movable unit 5 and a displacement of the movable unit 5; a drive unit 20 for supplying drive power corresponding to the control value set by the setting unit 12 to a shape-memory alloy 1 and causing the shape-memory alloy 1 to expand or contract, thereby positioning the movable unit 5; and a correction unit 13 for correcting the control value so as to correct a position shift of the movable unit 5 from a target position resulting from a difference between a control value-displacement characteristic at an ambient temperature and a control value-displacement characteristic at the reference temperature based on the ambient temperature detected by a temperature detection unit 11.
摘要:
In a first mode in which the power level of a transmission output signal (S6) is to be high, an output from the multiplier (2) is input to an amplitude modulation signal amplifier (4), and a radio frequency power amplifier (5) performs amplitude modulation on a radio frequency phase modulated signal (S4) using a nonlinear area with a supply voltage from the amplitude modulation signal amplifier (4). In a second mode in which the power level of a transmission output signal (S6) is to be low, the output from the multiplier (2) is input to a variable gain amplifier (7), and the variable gain amplifier (7) performs amplitude modulation on the radio frequency phase modulated signal (S4). The amplitude modulated signal is output without passing through the radio frequency power amplifier (5).
摘要:
An object of the preset invention is to provide a technique capable of preventing occurrence of an assembly error. A driving apparatus for driving an object includes: a driving part having a stationary part and a moving part; and a displacement transmitting part for transmitting a displacement to the object in accordance with a drive displacement of the moving part. The displacement transmitting part and the moving part coupled to the displacement transmitting part are integrally molded.
摘要:
An object of the present invention is to provide a small-sized image sensor device having high precision of moving an object to be moved. The image sensor device includes: a fixed unit; a movable unit including an image sensor; a beam unit fixed to the fixed unit and movably supporting the movable unit; a driving unit for applying a driving force for moving the movable unit; and a wire unit provided for the beam unit and electrically connecting the image sensor and an external circuit.