摘要:
A process for producing a hydrated and cured product of a lime-gypsum-coal ash mixture capable of constituting a high-performance desulfurizing agent, with a high yield and in a simplified manner is provided, which process comprises adding water to a mixture of lime, used desulfurizing agent and coal ash, followed by kneading the resulting mixture, then extruding the resulting kneaded material through a hole of 2 to 10 mm in diameter to obtain bullet-like materials, hydrating and curing said bullet-like materials, followed by drying.
摘要:
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要:
An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, an ink containing a specified dye represented by general formula (I) and a water-soluble organic compound having an inorganic-organic balance value of 1.4 or more to 2.7 or less is used.
摘要:
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要:
The present invention solves problems attributable to color mixing occurring at a region where an ink container containing three or more different inks and an inkjet printing head are connected as a result of repetition of connection and disconnection of the components. An ink cartridge has a joint section which is connected to a printing head unit when the inks are supplied to the printing head unit. The printing head unit performs printing by ejecting the cyan, magenta, and yellow inks. At the joint section, a supplying part for the cyan ink, a supplying part for the magenta ink, and a supplying part for the yellow ink are arranged in the order listed. The interval between the yellow ink supplying part and the magenta ink supplying part is greater than the interval between the cyan ink supplying part and the magenta ink supplying part.
摘要:
A conjugated fatty acid glyceride, which is formed by converting conjugated fatty acids having conjugated double bond(s) in the molecule into glycerol esters, to more effectively exert the inherent physiological effects of the conjugated fatty acids and control the bitterness or astringency of the conjugated fatty acids, thereby making the conjugated fatty acids suitable for oral intake. These conjugated glycerides (for example, glycerides having conjugated-linoleic acid in the molecule) have effects of improving lipid metabolism, treating obesity and treating hypertension.
摘要:
The present invention solves problems attributable to color mixing occurring at a region where an ink container containing three or more different inks and an inkjet printing head are connected as a result of repetition of connection and disconnection of the components. An ink cartridge has a joint section which is connected to a printing head unit when the inks are supplied to the printing head unit. The printing head unit performs printing by ejecting the cyan, magenta, and yellow inks. At the joint section, a supplying part for the cyan ink, a supplying part for the magenta ink, and a supplying part for the yellow ink are arranged in the order listed. The interval between the yellow ink supplying part and the magenta ink supplying part is greater than the interval between the cyan ink supplying part and the magenta ink supplying part.
摘要:
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要:
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.