公开(公告)号：US06285047B1

公开(公告)日：2001-09-04

申请号：US08618919

申请日：1996-03-20

申请人： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima ,  Noritoshi Ando

发明人： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima ,  Noritoshi Ando

IPC分类号： H01L31062

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14687

摘要： A linear image sensor IC comprising a plurality of switching circuits each connected to a plurality of light receiving elements in series; scanning circuits for sequentially switching said switching circuits; and driving circuits for operating said scanning circuits, wherein a LOCOS isolation layer is formed between an edge in the main scanning direction of the linear image sensor IC which is closest to an array of the light receiving elements and a light receiving portion of the light receiving element. The inventive image sensor IC is mounted by devising so that the circuit can be put into a thin and long pattern in the scanning direction, so that the chip having a width thinner than a thickness thereof which had been beyond expectation by the prior art can be realized. The use of this very thin IC allows a compact IC assembling substrate having less fluctuation among ICs to be manufactured at low cost. Even more, it becomes possible to mount ICs readily on a cylindrical substrate which had been also difficult in the past. Thereby, electronic devices such as a compact and low cost multi-chip type image sensor or multi-chip type thermal head can be realized. Accordingly, it becomes possible to bring down the cost thereof, which had been difficult in the past, and to realize a low cost facsimile.

摘要翻译： 一种线性图像传感器IC，包括多个开关电路，每个开关电路串联连接到多个光接收元件; 用于顺序地切换所述开关电路的扫描电路; 以及用于操作所述扫描电路的驱动电路，其中在最接近光接收元件的阵列的线性图像传感器IC的主扫描方向上的边缘和光接收的光接收部分之间形成LOCOS隔离层 元件。 通过设计安装本发明的图像传感器IC，使得电路可以沿扫描方向成为薄且长的图案，使得具有比现有技术超出预期的厚度的芯片的厚度可以是 实现了 使用这种非常薄的IC允许以低成本制造IC之间具有较小波动的紧凑型IC组装衬底。 更进一步地，可以将IC容易地安装在过去也是困难的圆筒形基板上。 因此，可以实现诸如紧凑且低成本的多芯片型图像传感器或多芯片型热敏头之类的电子设备。 因此，可以降低过去困难的成本，实现低成本的传真。

公开(公告)号：US5665960A

公开(公告)日：1997-09-09

申请号：US618837

申请日：1996-03-20

申请人： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima

发明人： Satoshi Machida ,  Yukito Kawahara ,  Masahiro Yokomichi ,  Yoshikazu Kojima

IPC分类号： H01L27/146 ,  H01L31/108 ,  H04N1/028 ,  H01J40/14

CPC分类号： H04N5/3745 ,  H01L27/14654 ,  H04N5/3591 ,  H04N5/3597

摘要： A photoelectric converter device having improved residual image characteristics and composed of a transistor having a control electrode region made of a semiconductor of a first conductivity type for accumulating carriers generated by an electromagnetic wave emitted by an object to be detected, a first main electrode region made of a semiconductor of a second conductivity type, and a second main electrode region made of a semiconductor of the second conductivity type, for performing an operation to accumulate the carriers, an operation of reading signals based on the carriers, and an operation of extinguishing the carriers, wherein carriers other than those generated by the electromagnetic wave emitted by the object to be detected are generated in or injected into the control electrode region. Thus, since the amount of excess majority carriers in the control electrode region after the extinguishing operation is always kept substantially constant, improved residual image characteristics are obtained.

摘要翻译： 一种具有改善的残留图像特性并由具有由第一导电类型的半导体构成的控制电极区域的晶体管的光电转换器装置，用于累积由待检测物体发射的电磁波产生的载流子，第一主电极区域 第二导电类型的半导体和由第二导电类型的半导体构成的第二主电极区域，用于执行累积载流子的操作，基于载流子读取信号的操作以及熄灭的操作 载体，其中由待检测对象发射的电磁波产生的载流子以外的载流子生成在或控制电极区域中。 因此，由于在灭火操作之后的控制电极区域中的多数载流子的量总是保持基本恒定，因此获得了改善的残留图像特性。

公开(公告)号：US06468825B1

公开(公告)日：2002-10-22

申请号：US09502709

申请日：2000-02-11

申请人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

发明人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

IPC分类号： H01L2100

CPC分类号： H01L27/0825

摘要： A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.

摘要翻译： 制造半导体温度传感器的方法包括以下步骤：形成PNP双极晶体管和PMOS晶体管，使得每个PNP双极晶体管的基极区域和每个PMOS晶体管的相应N阱区域同时形成 ，并在达林顿连接中连接PNP双极晶体管。

公开(公告)号：US6046492A

公开(公告)日：2000-04-04

申请号：US712871

申请日：1996-09-12

申请人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

发明人： Satoshi Machida ,  Yukito Kawahara ,  Kentaro Kuhara ,  Toru Shimizu ,  Yoshikazu Kojima

IPC分类号： G01K7/01 ,  H01L21/8222 ,  H01L27/082

CPC分类号： H01L27/0825

摘要： A semiconductor temperature sensor comprises independent current sources and bipolar transistors connected to form a Darlington circuit. The bipolar transistors have electrodes each connected to one of the current sources. An output voltage of the semiconductor temperature sensor is adjusted by trimming a current value of at least one of the current sources.

摘要翻译： 半导体温度传感器包括独立的电流源和连接形成达林顿电路的双极晶体管。 双极晶体管具有各自连接到电流源之一的电极。 通过修剪至少一个电流源的电流值来调节半导体温度传感器的输出电压。

公开(公告)号：US06320242B1

公开(公告)日：2001-11-20

申请号：US09176339

申请日：1998-10-21

申请人： Hiroaki Takasu ,  Noritoshi Ando ,  Yoshikazu Kojima ,  Kazunari Sugiura ,  Michiaki Yazawaw

发明人： Hiroaki Takasu ,  Noritoshi Ando ,  Yoshikazu Kojima ,  Kazunari Sugiura ,  Michiaki Yazawaw

IPC分类号： H01L2900

CPC分类号： H01L23/544 ,  H01L23/5258 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor integrated circuit device having laser-trimmable fuses and a trimming position pattern, in order to increase trimming accuracy and reduce the size of the positioning pattern, the fuses and the positioning pattern are formed using the same thin film. The trimming positioning pattern has an abrupt boundary between a high light reflectivity region and a low reflectivity region so that light reflectivity varies abruptly. To further reduce size, the trimming positioning pattern can be formed in pad areas of a integrated circuit chip or placed at intersections between scribe lines in a wafer.

摘要翻译： 在具有激光可调熔断器和修整位置图案的半导体集成电路器件中，为了提高修整精度并减小定位图案的尺寸，使用相同的薄膜形成保险丝和定位图案。 修整定位图案在高反射率区域和低反射率区域之间具有突然的边界，使得光反射率突然变化。 为了进一步减小尺寸，修整定位图案可以形成在集成电路芯片的焊盘区域中或放置在晶片中的划线之间的交叉处。

公开(公告)号：US06747319B2

公开(公告)日：2004-06-08

申请号：US09803624

申请日：2001-03-09

申请人： Yoshikazu Kojima ,  Kazutoshi Ishii ,  Masaaki Kamiya ,  Yasuhiro Moya

发明人： Yoshikazu Kojima ,  Kazutoshi Ishii ,  Masaaki Kamiya ,  Yasuhiro Moya

IPC分类号： H01L2976

CPC分类号： H01L29/7834 ,  H01L27/0266 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/105 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including multiple high-voltage drive transistors in its output section is improved in electrostatic withstand voltage by connecting electrostatic protection transistors in parallel with the high-voltage drive transistors connected to the output pads. The drain withstand voltage of the electrostatic protection transistors is made lower than the drain withstand voltage of the high-voltage drive transistors. In addition, the channel length of electrostatic protection transistors is made short to enable efficient bipolar operation of the electrostatic protection transistors.

摘要翻译： 在其输出部分中包括多个高电压驱动晶体管的半导体器件通过将静电保护晶体管与连接到输出焊盘的高电压驱动晶体管并联连接来提高静电耐受电压。 使静电保护晶体管的漏极耐受电压低于高电压驱动晶体管的漏极耐受电压。 此外，静电保护晶体管的沟道长度变短，以实现静电保护晶体管的高效双极性操作。

公开(公告)号：US06188293B1

公开(公告)日：2001-02-13

申请号：US08713089

申请日：1996-09-16

申请人： Masanori Miyagi ,  Yoshikazu Kojima

发明人： Masanori Miyagi ,  Yoshikazu Kojima

IPC分类号： H03B524

CPC分类号： H03K3/011 ,  H03K3/0315 ,  H03K3/354 ,  H03K5/133 ,  H03K2005/00039 ,  H03K2005/0013 ,  H03K2005/00195

摘要： An low-power consumption integrated ring oscillator capable of stable operation throughout a wide voltage range without undergoing a large frequency change includes a first constant voltage generating circuit having an enhancement mode P-MOS transistor and a depletion mode N-MOS transistor and a second constant voltage generating circuit having a depletion mode N-MOS transistor and an enhancement mode N-MOS transistor. A first constant voltage generated by the first constant voltage circuit is applied to a gate electrode of a P-MOS transistor of transmission gates connected between respective cascaded inverters of the ring oscillator. A second constant voltage generated by the second constant voltage generating circuit is connected to the gate electrode of an N-MOS transistor of the transmission gates. By this construction, current consumption is reduced and battery lifetime can be increased. The boosting circuit for writing and erasing an EEPROM circuit may be formed with the low power ring oscillator.

摘要翻译： 能够在宽电压范围内稳定工作而不经历大的频率变化的低功耗集成环形振荡器包括具有增强型P-MOS晶体管和耗尽型N-MOS晶体管的第一恒定电压产生电路和第二常数 具有耗尽型N-MOS晶体管和增强型N-MOS晶体管的电压产生电路。 由第一恒压电路产生的第一恒定电压被施加到连接在环形振荡器的各个级联反相器之间的传输门的P-MOS晶体管的栅电极。 由第二恒压产生电路产生的第二恒定电压连接到传输门的N-MOS晶体管的栅电极。 通过这种结构，电流消耗降低，并且可以提高电池寿命。 用于写入和擦除EEPROM电路的升压电路可以由低功率环形振荡器形成。

公开(公告)号：US06181108B2

公开(公告)日：2001-01-30

申请号：US09196698

申请日：1998-11-20

申请人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

发明人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

IPC分类号： H01M1046

CPC分类号： H02J7/1438 ,  H02J7/0011 ,  H02J7/0018 ,  H02J7/0026 ,  H02J7/0031 ,  H02J7/0034 ,  H02J7/0063 ,  H02J7/008 ,  H02J7/0086 ,  H02J2007/004

摘要： A charge/discharge control circuit is provided for an electric power source apparatus in which a service life is prolonged. A voltage dividing circuit, an overcharge voltage detection circuit, an overdischarge voltage detection circuit and a control circuit are connected in parallel to a secondary cell which is an electric power source, wherein the control circuit detects a condition of the secondary cell from the overcharge/overdischarge voltage detection circuits and outputs a signal Vs for controlling a power supply to an external equipment and a charge by an external power source and controls a switching element provided in series with the voltage dividing circuit and reduces a current which flows through the voltage dividing circuit.

摘要翻译： 为延长使用寿命的电源装置提供充放电控制电路。 分压电路，过充电电压检测电路，过放电电压检测电路和控制电路并联连接到作为电源的二次电池，其中控制电路从过充电/过电压检测电路检测二次电池的状态， 过放电电压检测电路，输出用于控制外部设备的电力供给的信号Vs和外部电源的电荷，并控制与分压电路串联设置的开关元件，并减少流过分压电路的电流 。

公开(公告)号：US6097177A

公开(公告)日：2000-08-01

申请号：US196699

申请日：1998-11-20

申请人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

发明人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

IPC分类号： H02J7/00 ,  H02J7/14 ,  H01M10/46

CPC分类号： H02J7/0026 ,  H02J7/0031 ,  H02J7/1438 ,  H02J2007/004 ,  H02J7/0034

摘要： A charge/discharge control circuit for controlling the charging and discharging of a secondary cell has a voltage dividing circuit for dividing an output voltage of the secondary cell, which may comprise plural cells, an overcharge detection circuit for detecting an overcharge state of the secondary cell, an overdischarge detection circuit for detecting an overdischarge state of the secondary cell, and a control circuit for receiving and processing an output signal of the overcharge detecting circuit and the overdischarge detecting circuit and controlling the switch. In a preferred embodiment, an overcharge reference voltage source used for the overcharge voltage detection circuit is used also as an overdischarge reference voltage source for the overdischarge voltage detection circuit.

摘要翻译： 用于控制二次电池的充电和放电的充电/放电控制电路具有分压电路，用于对可能包括多个电池的二次电池的输出电压进行分压，用于检测二次电池的过充电状态的过充电检测电路 用于检测二次电池的过放电状态的过放电检测电路，以及用于接收和处理过充电检测电路和过放电检测电路的输出信号并控制开关的控制电路。 在优选实施例中，用于过充电电压检测电路的过充电参考电压源也用作过放电电压检测电路的过放电参考电压源。

公开(公告)号：US5965921A

公开(公告)日：1999-10-12

申请号：US680346

申请日：1996-07-17

申请人： Yoshikazu Kojima

发明人： Yoshikazu Kojima

IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/76 ,  H01L27/01 ,  H01L29/00 ,  H01L29/94

CPC分类号： H01L27/0688 ,  H01L27/0922

摘要： In an integrated circuit type semiconductor device consisting of MISFETs, high rated voltage characteristic is obtained in a gate insulation film structure of a thin film. Further, a reduction in the manufacturing cost of semiconductor devices including high-rated voltage and low rated voltage MISFETs. An intermediate gate electrode is provided which overlies a channel formation region and a gate region with the same gate insulation film being sandwiched therebetween. The gate region is provided on the surface of a substrate. The channel formation region has an impedance indirectly controllable via the intermediate gate electrode upon application of a voltage to the gate region. The intermediate gate electrode is provided with a voltage reset(set) means connected thereto for eliminating the occurrence of charge-up.

摘要翻译： 在由MISFET组成的集成电路型半导体器件中，在薄膜的栅绝缘膜结构中获得高额定电压特性。 此外，降低包括高额定电压和低额定电压MISFET的半导体器件的制造成本。 提供了一个中间栅极电极，其位于沟道形成区域和栅极区域之间，其间夹有相同的栅极绝缘膜。 栅极区域设置在基板的表面上。 沟道形成区域在向栅极区域施加电压时具有经由中间栅电极间接控制的阻抗。 中间栅电极设置有与其连接的电压复位（集合）装置，以消除充电的发生。