摘要:
A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provided using polycrystalline silicon since it can have much higher resistivity than single crystal silicon. Accordingly, a circuit is provided wherein active devices are provided in single crystal silicon and interconnects are formed overlying polycrystalline silicon to provide transmission line interconnects between devices and obtain the desired high frequency response. This is accomplished by providing a highly doped silicon substrate of predetermined conductivity type having a less highly doped silicon layer thereon of the same conductivity type with an oxide layer over the less highly doped layer, forming mesas for formation therein of active elements in the structure having valleys between the mesas extending into the substrate, filling the valleys with very high resistivity polysilicon, forming an electrically insulating layer over the polysilicon, forming active elements with contacts thereto in the mesas and forming interconnects between contacts of the active elements extending over the high resistivity polysilicon regions and the electrically insulating material thereover.
摘要:
A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provided using polycrystalline silicon since it can have much higher resistivity than single crystal silicon. Accordingly, a circuit is provided wherein active devices are provided in single crystal silicon and interconnects are formed overlying polycrystalline silicon to provide transmission line interconnects between devices and obtain the desired high frequency response. This is accomplished by providing a highly doped silicon substrate of predetermined conductivity type having a less highly doped silicon layer thereon of the same conductivity type with an oxide layer over the less highly doped layer, forming mesas for formation therein of active elements in the structure having valleys between the mesas extending into the substrate, filling the valleys with very high resistivity polysilicon, forming an electrically insulating layer over the polysilicon, forming active elements with contacts thereto in the mesas and forming interconnects between contacts of the active elements extending over the high resistivity polysilicon regions and the electrically insulating material thereover.
摘要:
A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12) . A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).
摘要:
A full wafer integrated circuit testing device (10) tests integrated circuits (15) formed as a wafer in conjunction with a test control unit (40). Probe units (14) associate with respective integrated circuits (15). Probe tips (16) on probe units (14) communicate with respective pads (19) with the integrated circuits (15). Interface circuitry (36) selectively communicates test data between the test control unit (40) and the integrated circuit (15). Test pins (16) have positions on probe units (14) associated with respective integrated circuit connection points (19) for testing associated integrated circuit (15) components. Interface circuitry (36) includes comparators (54 and 56) that compare signals between the integrated circuit (15) and the test control unit (40). Memory components (66 and 68) store data associated with signals from test control unit (40) and said integrated circuit (15). Compliant material (32) assures that probe tips (16) throughout probe card (10) positively and conductively engage integrated circuit pads (19) of all associated integrated circuits (15) of a wafer.
摘要:
A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12). A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).
摘要:
An integrated circuit AC test and burn-in socket (10) for communicating test signals between test circuitry and an integrated circuit chip (11) comprises connection circuitry (32) associated to engage the chip (11) and communicate test signals between the chip (11) and the test circuitry. A compliant base (34) supports the circuitry (32) and assures positive engagement and electrical connection between the circuitry (32) and the chip (11). A socket assembly (20 and 21) holds the chip (11) in engagement with the connection circuitry (32).
摘要:
A source cell having reduced area and reduced polysilicon window width requirements for use as the source region in a DMOS transistor is disclosed, comprising: a source region of semiconductor material disposed on a semiconductor substrate; a plurality of backgate contact segments of predetermined size and separated by predetermined distances; and a plurality of source contact windows alternating with the backgate contact segments so that a narrow source contact region is formed of alternating source contact and backgate contact material. A DMOS transistor embodying the source region including the backgate contact segments and windowed source contacting regions of the invention is disclosed. An integrated circuit providing an array of DMOS transistors having the improved source regions of the invention is disclosed.Other devices, systems and methods are also disclosed.
摘要:
A triple-diffused lateral RESURF transistor (55,57) uses a threshold voltage adjust implant (52, 54) in conjunction with a thinner gate oxide (64) to yield a device which is more compatible with CMOS VLSI manufacturing processes and which delivers better performance characteristics than more conventional double-diffused RESURF transistor devices.
摘要:
A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12). A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).
摘要:
A system and method for testing the continuity of interconnecting nets on a substrate to be used in multi-chip technology is provided. The system includes coupling a test pad (15) to the net (12) to be tested. The test pad (15) is coupled through a diode (34) to a common node (32). The voltage of a first node (16) of the net (12) is sensed by a voltmeter (38) which is coupled to ground. A predetermined current signal is applied to each node (16, 18, 20, 22) in the net through the use of a probe (42). The voltage of the remaining nets (14) is sensed by a voltmeter (44). If an erroneous interconnection (31) is present between the net (12) to be tested and any other net (14) on the substrate, the voltage of the other net (14) will fluctuate. The voltmeter (38) will indicate if there is an electrical connection between the node (16) and the test pad (15) during testing. If an electrical path is established between each node in the net (12) and test pad (15), the continuity of the net (12) is established through the operation of Ohm's law.