公开(公告)号：US07208752B2

公开(公告)日：2007-04-24

申请号：US10840267

申请日：2004-05-07

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

摘要： A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

摘要翻译： 氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

公开(公告)号：US20060244017A1

公开(公告)日：2006-11-02

申请号：US11428405

申请日：2006-07-03

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

公开(公告)号：US06492661B1

公开(公告)日：2002-12-10

申请号：US09434316

申请日：1999-11-04

申请人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

发明人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L3300

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/145

摘要： A light-emitting device with a reflection layer is disclosed. The reflection layer is formed on a light emitting stack structure. A second substrate is subsequently combined with the reflection layer, and then the original substrate of the stack structure is removed, such that the second substrate becomes the substrate of the device. The reflection layer can effectively reflect the light emitted from the light emitting stack structure and directed to the substrate, and thus can increase the light-emitting efficiency of a surface-emitting type light-emitting device. The invention can also convert a light-emnitting device using an insulated substrate to be the one having vertical type electrode structure so as to effectively reduce the wafer area used for a die and facilitate subsequent wiring and packaging processes using traditional mechanisms.

摘要翻译： 公开了一种具有反射层的发光器件。 反射层形成在发光堆叠结构上。 随后将第二衬底与反射层组合，然后去除堆叠结构的原始衬底，使得第二衬底变成器件的衬底。 反射层可以有效地反射从发光堆叠结构发出的光并被引导到衬底，从而可以提高表面发射型发光器件的发光效率。 本发明还可以将使用绝缘基板的发光装置转换为具有垂直型电极结构的发光装置，以便有效地减少用于晶片的晶片面积，并利用传统的机制促进后续的布线和封装工艺。

公开(公告)号：US07183583B2

公开(公告)日：2007-02-27

申请号：US11020737

申请日：2004-12-22

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L29/22

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

摘要翻译： 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩散金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

公开(公告)号：US20070018180A1

公开(公告)日：2007-01-25

申请号：US11491124

申请日：2006-07-24

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

摘要： A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

公开(公告)号：US20070018178A1

公开(公告)日：2007-01-25

申请号：US11491122

申请日：2006-07-24

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

摘要： A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

摘要翻译： GaN基发光二极管的垂直电极结构公开了构成垂直电极结构的GaN基发光二极管的氧化物窗层，其有效地降低了菲涅尔反射损失和全反射，进一步提高了发光效率。 此外，进一步包括的金属反射层引起没有选择入射角的反射，从而增加反射角的覆盖，并进一步反射从发光层发射的光。 此外，本发明的结构还可以提高散热和静电放电（ESD）的功能，从而增加部件的使用寿命并适用于高电流驱动下的使用。 此外，本发明的垂直电极结构能够降低芯片的制造方形并促进常规引线接合工艺的后期。

公开(公告)号：US20060033120A1

公开(公告)日：2006-02-16

申请号：US11257044

申请日：2005-10-25

申请人： Schang-Jing Hon ,  Mu-Jen Lai

发明人： Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32

摘要： A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

摘要翻译： 对GaN系发光元件及其制造方法进行说明。 发光装置是其上具有光提取层的发光体。 发光体具有一些GaN基层，并且当施加能量时能够发光。 光提取层是具有电流扩散层和微结构层的双层结构，或没有电流扩展层的单层结构。 微结构层是通过Ti层退火获得的具有纳米网状结构的TiN层或具有金属簇的Pt层的PtN层。

公开(公告)号：US20050236636A1

公开(公告)日：2005-10-27

申请号：US10829934

申请日：2004-04-23

申请人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

发明人： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

IPC分类号： H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32

摘要： In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.

摘要翻译： 在基于GaN的发光二极管结构中，在具有表面纹理化层的GaN接触层上形成透明导电氧化物层作为窗口层，并且纹理化层用作与透明导电氧化物层的欧姆接触层。 因此，可以有效地降低接触电阻和工作电压，同时导光效应被纹理层中断，从而提高光提取效率，从而提高外部量子产率。

公开(公告)号：US07453098B2

公开(公告)日：2008-11-18

申请号：US11491124

申请日：2006-07-24

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

摘要： A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

摘要翻译： GaN基发光二极管的垂直电极结构公开了构成垂直电极结构的GaN基发光二极管的氧化物窗层，其有效地降低了菲涅尔反射损失和全反射，进一步提高了发光效率。 此外，进一步包括的金属反射层引起没有选择入射角的反射，从而增加反射角的覆盖，并进一步有效地反射从发光层发射的光。 此外，本发明的结构还可以提高散热和静电放电（ESD）的功能，从而增加部件的使用寿命并适用于高电流驱动下的使用。 此外，本发明的垂直电极结构能够降低芯片的制造方形并促进常规引线接合工艺的后期。

公开(公告)号：US20060273342A1

公开(公告)日：2006-12-07

申请号：US11501773

申请日：2006-08-10

申请人： Mu-Jen Lai ,  Schang-Jing Hon

发明人： Mu-Jen Lai ,  Schang-Jing Hon

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/10 ,  H01L33/18

摘要： A GaN-series of light emitting diode with high light extraction efficiency includes a substrate, a n-type semiconductor, a light emitting layer and a p-type semiconductor layer. More particular, the p-type semiconductor layer includes a p-type cladding layer, a p-type transition layer and a p-type ohmic contact layer, wherein the p-type transition layer is formed on the p-type cladding layer and the p-type ohmic contact layer is formed on the p-type transition layer. A doping concentration of magnesium of the p-type ohmic contact layer is between the p-type cladding layer and the p-type transition layer thereof that is to form the strain among three layers of the p-type semiconductor layer. Hence, a surface (the p-type ohmic contact layer) of the p-type semiconductor layer has a non-hexagonal texture, which interruptes the optical waveguide effect to increase external quantum efficiency and operation life of the light emitting diode.

摘要翻译： 具有高光提取效率的GaN系发光二极管包括衬底，n型半导体，发光层和p型半导体层。 更具体地，p型半导体层包括p型覆层，p型过渡层和p型欧姆接触层，其中p型过渡层形成在p型覆层上， p型欧姆接触层形成在p型过渡层上。 p型欧姆接触层的镁的掺杂浓度在p型覆层和p型过渡层之间，在p型半导体层的三层中形成应变。 因此，p型半导体层的表面（p型欧姆接触层）具有非六边形结构，其中断了光波导效应以增加发光二极管的外部量子效率和使用寿命。