公开(公告)号：US09057514B2

公开(公告)日：2015-06-16

申请号：US13542579

申请日：2012-07-05

申请人： Scott E. Sills ,  Anton J. de Villiers

发明人： Scott E. Sills ,  Anton J. de Villiers

IPC分类号： F21V29/00 ,  F21Y101/02 ,  H04M1/22

CPC分类号： F21V29/51 ,  F21V29/58 ,  F21Y2115/10 ,  H04M1/22

摘要： A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

摘要翻译： 具有固态发射器（SSE）的固态照明（SSL）设备在通道环路中部分露出，以及制造和使用这种SSL的方法。 SSE可以具有导热突起，例如翅片，柱或其他结构，其被配置为将热量传递到流体介质，例如通道环路中的液体冷却剂。 通道回路可以包括向上的通道，其中SSE被暴露以升温向上的通道中的冷却剂，以及冷却剂在被冷却结构冷却之后通过该向下通道流动。 通道回路中的冷却液由于来自SSE的热量而自然循环。

公开(公告)号：US08217557B2

公开(公告)日：2012-07-10

申请号：US12872647

申请日：2010-08-31

申请人： Scott E. Sills ,  Anton J. de Villiers

发明人： Scott E. Sills ,  Anton J. de Villiers

IPC分类号： H01J1/02

CPC分类号： F21V29/51 ,  F21V29/58 ,  F21Y2115/10 ,  H04M1/22

摘要： A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

摘要翻译： 具有固态发射器（SSE）的固态照明（SSL）设备在通道环路中部分露出，以及制造和使用这种SSL的方法。 SSE可以具有导热突起，例如翅片，柱或其他结构，其被配置为将热量传递到流体介质，例如通道环路中的液体冷却剂。 通道回路可以包括向上的通道，其中SSE被暴露以升温向上的通道中的冷却剂，以及冷却剂在被冷却结构冷却之后通过该向下通道。 通道回路中的冷却液由于来自SSE的热量而自然循环。

公开(公告)号：US20120049715A1

公开(公告)日：2012-03-01

申请号：US12872647

申请日：2010-08-31

申请人： Scott E. Sills ,  Anton J. de Villiers

发明人： Scott E. Sills ,  Anton J. de Villiers

IPC分类号： H01J7/24 ,  H01J9/00

CPC分类号： F21V29/51 ,  F21V29/58 ,  F21Y2115/10 ,  H04M1/22

摘要： A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

公开(公告)号：US08796665B2

公开(公告)日：2014-08-05

申请号：US13219518

申请日：2011-08-26

申请人： Scott E. Sills ,  Anton J. De Villiers

发明人： Scott E. Sills ,  Anton J. De Villiers

IPC分类号： H01L33/30 ,  H01L33/06 ,  H01L33/08 ,  H01L33/48

CPC分类号： H01L31/022441 ,  H01L27/156 ,  H01L31/048 ,  H01L31/0543 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/486 ,  H01L33/505 ,  H01L33/58 ,  H01L2924/0002 ,  Y02E10/52 ,  H01L2924/00

摘要： Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material.

摘要翻译： 固态辐射传感器（SSRT）组件和制造SSRT组件的方法。 在一个实施例中，SSRT组件包括在第一衬底上具有外延生长材料和辐射换能器的第一衬底。 辐射换能器可以具有在第一基板上生长的第一半导体材料，第二半导体材料以及第一和第二半导体材料之间的有源区。 SSRT还可以具有电耦合到第一半导体材料的第一触点和电耦合到第二半导体材料的第二触点。 第一衬底具有开口，辐射可以通过该开口传递到第一半导体材料和/或从第一半导体材料。

公开(公告)号：US08709845B2

公开(公告)日：2014-04-29

申请号：US13612484

申请日：2012-09-12

申请人： Scott E. Sills ,  Lifang Xu ,  Scott D. Schellhammer ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

发明人： Scott E. Sills ,  Lifang Xu ,  Scott D. Schellhammer ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405

摘要： Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

摘要翻译： 本文公开了具有蜂窝阵列和相关制造方法的固态照明（“SSL”）设备。 在一个实施例中，发光二极管包括具有第一表面和与第一表面相对的第二表面的半导体材料。 半导体材料具有从第一表面延伸到半导体材料中的孔。 发光二极管还包括与半导体材料直接接触的有源区，并且有源区的至少一部分位于半导体材料的孔中。

公开(公告)号：US20130048940A1

公开(公告)日：2013-02-28

申请号：US13219518

申请日：2011-08-26

申请人： Scott E. Sills ,  Anton J. De Villiers

发明人： Scott E. Sills ,  Anton J. De Villiers

IPC分类号： H01L33/30 ,  H01L31/0304 ,  H01L33/06 ,  H01L33/08 ,  H01L33/48

CPC分类号： H01L31/022441 ,  H01L27/156 ,  H01L31/048 ,  H01L31/0543 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/486 ,  H01L33/505 ,  H01L33/58 ,  H01L2924/0002 ,  Y02E10/52 ,  H01L2924/00

摘要： Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material.

摘要翻译： 固态辐射传感器（SSRT）组件和制造SSRT组件的方法。 在一个实施例中，SSRT组件包括在第一衬底上具有外延生长材料和辐射换能器的第一衬底。 辐射换能器可以具有在第一基板上生长的第一半导体材料，第二半导体材料以及第一和第二半导体材料之间的有源区。 SSRT还可以具有电耦合到第一半导体材料的第一触点和电耦合到第二半导体材料的第二触点。 第一衬底具有开口，辐射可以通过该开口传递到第一半导体材料和/或从第一半导体材料。

公开(公告)号：US20120286640A1

公开(公告)日：2012-11-15

申请号：US13542579

申请日：2012-07-05

申请人： Scott E. Sills ,  Anton J. de Villiers

发明人： Scott E. Sills ,  Anton J. de Villiers

IPC分类号： H01J7/24

CPC分类号： F21V29/51 ,  F21V29/58 ,  F21Y2115/10 ,  H04M1/22

摘要： A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

摘要翻译： 具有固态发射器（SSE）的固态照明（SSL）设备在通道环路中部分露出，以及制造和使用这种SSL的方法。 SSE可以具有导热突起，例如翅片，柱或其他结构，其被配置为将热量传递到流体介质，例如通道环路中的液体冷却剂。 通道回路可以包括向上的通道，其中SSE被暴露以升温向上的通道中的冷却剂，以及冷却剂在被冷却结构冷却之后通过该向下通道。 通道回路中的冷却液由于来自SSE的热量而自然循环。

公开(公告)号：US08900963B2

公开(公告)日：2014-12-02

申请号：US13287814

申请日：2011-11-02

申请人： Scott E. Sills ,  Dan B. Millward

发明人： Scott E. Sills ,  Dan B. Millward

IPC分类号： H01L21/20 ,  H01L45/00

CPC分类号： H01L45/1266 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1683

摘要： A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

摘要翻译： 一种形成半导体器件结构的方法。 该方法包括在电极上形成包含至少两个不同结构域的嵌段共聚物组合物。 选择性地将至少一种金属前体偶联到嵌段共聚物组合物上以形成包含至少一个金属络合域和至少一个非金属络合域的金属络合嵌段共聚物组合物。 将金属络合的嵌段共聚物组合物退火以形成至少一种金属结构。 描述形成半导体器件结构的其它方法。 还描述了半导体器件结构。

公开(公告)号：US08633566B2

公开(公告)日：2014-01-21

申请号：US13089967

申请日：2011-04-19

申请人： Scott E. Sills

发明人： Scott E. Sills

IPC分类号： H01L23/52

CPC分类号： H01L23/5256 ,  H01L27/10 ,  H01L27/1021 ,  H01L27/224 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2436 ,  H01L2924/0002 ,  H01L2924/00

摘要： A repairable memory cell in accordance with one or more embodiments of the present disclosure includes a storage element positioned between a first and a second electrode, and a repair element positioned between the storage element and at least one of the first electrode and the second electrode.

摘要翻译： 根据本公开的一个或多个实施例的可修复存储单元包括位于第一和第二电极之间的存储元件和位于存储元件与第一电极和第二电极中的至少一个之间的修复元件。

公开(公告)号：US20130175494A1

公开(公告)日：2013-07-11

申请号：US13347840

申请日：2012-01-11

申请人： Dale W. Collins ,  Marko Milojevic ,  Scott E. Sills ,  Si-Young Park

发明人： Dale W. Collins ,  Marko Milojevic ,  Scott E. Sills ,  Si-Young Park

IPC分类号： H01L47/00 ,  H01L21/02

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

摘要： Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.

摘要翻译： 存储单元（例如，CBRAM单元）包括活性材料上的离子源材料和在离子源材料上的包含金属硅化物的电极。 离子源材料可以包括硫族化物材料和金属中的至少一种。 装置，例如系统和装置，包括多个这样的存储单元。 存储单元包括在离子源材料和元素金属电极之间的金属硅化物的粘附材料。 形成存储单元的方法包括形成第一电极，形成活性材料，形成离子源材料，以及在金属离子源材料上形成包括金属硅化物的第二电极。 包括铜和包括钨的材料的材料的粘合方法包括在包括铜的材料上形成硅化钨材料并处理材料。