Solid state lights with thermosiphon liquid cooling structures and methods
    2.
    发明授权
    Solid state lights with thermosiphon liquid cooling structures and methods 有权
    具有热虹吸液体冷却结构和方法的固态灯

    公开(公告)号:US09057514B2

    公开(公告)日:2015-06-16

    申请号:US13542579

    申请日:2012-07-05

    IPC分类号: F21V29/00 F21Y101/02 H04M1/22

    摘要: A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

    摘要翻译: 具有固态发射器(SSE)的固态照明(SSL)设备在通道环路中部分露出,以及制造和使用这种SSL的方法。 SSE可以具有导热突起,例如翅片,柱或其他结构,其被配置为将热量传递到流体介质,例如通道环路中的液体冷却剂。 通道回路可以包括向上的通道,其中SSE被暴露以升温向上的通道中的冷却剂,以及冷却剂在被冷却结构冷却之后通过该向下通道流动。 通道回路中的冷却液由于来自SSE的热量而自然循环。

    Solid state lights with thermosiphon liquid cooling structures and methods
    3.
    发明授权
    Solid state lights with thermosiphon liquid cooling structures and methods 有权
    具有热虹吸液体冷却结构和方法的固态灯

    公开(公告)号:US08217557B2

    公开(公告)日:2012-07-10

    申请号:US12872647

    申请日:2010-08-31

    IPC分类号: H01J1/02

    摘要: A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

    摘要翻译: 具有固态发射器(SSE)的固态照明(SSL)设备在通道环路中部分露出,以及制造和使用这种SSL的方法。 SSE可以具有导热突起,例如翅片,柱或其他结构,其被配置为将热量传递到流体介质,例如通道环路中的液体冷却剂。 通道回路可以包括向上的通道,其中SSE被暴露以升温向上的通道中的冷却剂,以及冷却剂在被冷却结构冷却之后通过该向下通道。 通道回路中的冷却液由于来自SSE的热量而自然循环。

    Solid state radiation transducers and methods of manufacturing
    5.
    发明授权
    Solid state radiation transducers and methods of manufacturing 有权
    固态辐射传感器和制造方法

    公开(公告)号:US08796665B2

    公开(公告)日:2014-08-05

    申请号:US13219518

    申请日:2011-08-26

    摘要: Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material.

    摘要翻译: 固态辐射传感器(SSRT)组件和制造SSRT组件的方法。 在一个实施例中,SSRT组件包括在第一衬底上具有外延生长材料和辐射换能器的第一衬底。 辐射换能器可以具有在第一基板上生长的第一半导体材料,第二半导体材料以及第一和第二半导体材料之间的有源区。 SSRT还可以具有电耦合到第一半导体材料的第一触点和电耦合到第二半导体材料的第二触点。 第一衬底具有开口,辐射可以通过该开口传递到第一半导体材料和/或从第一半导体材料。

    SOLID STATE RADIATION TRANSDUCERS AND METHODS OF MANUFACTURING
    6.
    发明申请
    SOLID STATE RADIATION TRANSDUCERS AND METHODS OF MANUFACTURING 有权
    固体辐射传感器及其制造方法

    公开(公告)号:US20130048940A1

    公开(公告)日:2013-02-28

    申请号:US13219518

    申请日:2011-08-26

    摘要: Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material.

    摘要翻译: 固态辐射传感器(SSRT)组件和制造SSRT组件的方法。 在一个实施例中,SSRT组件包括在第一衬底上具有外延生长材料和辐射换能器的第一衬底。 辐射换能器可以具有在第一基板上生长的第一半导体材料,第二半导体材料以及第一和第二半导体材料之间的有源区。 SSRT还可以具有电耦合到第一半导体材料的第一触点和电耦合到第二半导体材料的第二触点。 第一衬底具有开口,辐射可以通过该开口传递到第一半导体材料和/或从第一半导体材料。

    SOLID STATE LIGHTS WITH THERMOSIPHON LIQUID COOLING STRUCTURES AND METHODS
    7.
    发明申请
    SOLID STATE LIGHTS WITH THERMOSIPHON LIQUID COOLING STRUCTURES AND METHODS 有权
    具有热液体冷却结构和方法的固态灯

    公开(公告)号:US20120286640A1

    公开(公告)日:2012-11-15

    申请号:US13542579

    申请日:2012-07-05

    IPC分类号: H01J7/24

    摘要: A solid state lighting (SSL) device with a solid state emitter (SSE) being partially exposed in a channel loop, and methods of making and using such SSLs. The SSE can have thermally conductive projections such as fins, posts, or other structures configured to transfer heat into a fluid medium, such as a liquid coolant in the channel loop. The channel loop can include an upward channel in which the SSE is exposed to warm the coolant in the upward channel, and a downward channel through which coolant moves after being cooled by a cooling structure. The coolant in the channel loop can naturally circulate due to the heat from the SSE.

    摘要翻译: 具有固态发射器(SSE)的固态照明(SSL)设备在通道环路中部分露出,以及制造和使用这种SSL的方法。 SSE可以具有导热突起,例如翅片,柱或其他结构,其被配置为将热量传递到流体介质,例如通道环路中的液体冷却剂。 通道回路可以包括向上的通道,其中SSE被暴露以升温向上的通道中的冷却剂,以及冷却剂在被冷却结构冷却之后通过该向下通道。 通道回路中的冷却液由于来自SSE的热量而自然循环。

    Methods of forming semiconductor device structures, and related structures
    10.
    发明授权
    Methods of forming semiconductor device structures, and related structures 有权
    形成半导体器件结构的方法及相关结构

    公开(公告)号:US08900963B2

    公开(公告)日:2014-12-02

    申请号:US13287814

    申请日:2011-11-02

    IPC分类号: H01L21/20 H01L45/00

    摘要: A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

    摘要翻译: 一种形成半导体器件结构的方法。 该方法包括在电极上形成包含至少两个不同结构域的嵌段共聚物组合物。 选择性地将至少一种金属前体偶联到嵌段共聚物组合物上以形成包含至少一个金属络合域和至少一个非金属络合域的金属络合嵌段共聚物组合物。 将金属络合的嵌段共聚物组合物退火以形成至少一种金属结构。 描述形成半导体器件结构的其它方法。 还描述了半导体器件结构。