LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
    5.
    发明申请
    LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING 有权
    发光二极管及相关制造方法

    公开(公告)号:US20110193115A1

    公开(公告)日:2011-08-11

    申请号:US12703660

    申请日:2010-02-10

    IPC分类号: H01L33/00

    摘要: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

    摘要翻译: 本文公开了发光二极管和相关的制造方法。 在一个实施例中,发光二极管(LED)包括衬底,由衬底承载的半导体材料和靠近半导体材料的有源区。 半导体材料具有靠近基板的第一表面和与第一表面相对的第二表面。 半导体材料的第二表面通常是非平面的,并且有源区域通常符合半导体材料的非平面第二表面。

    LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING
    8.
    发明申请
    LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING 有权
    具有非极性和相关制造方法的发光二极管

    公开(公告)号:US20110210353A1

    公开(公告)日:2011-09-01

    申请号:US12714262

    申请日:2010-02-26

    IPC分类号: H01L33/00

    摘要: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

    摘要翻译: 本文公开了具有N极性和相关制造方法的发光二极管(“LED”)。 在一个实施例中,用于在具有衬底材料的衬底上形成发光二极管的方法包括在衬底的表面上形成至少接近衬底表面的富氮环境,而不形成衬底材料的硝基化产物。 该方法还包括在具有富氮环境的基板的表面上形成具有氮极性的LED结构。