Measuring elastic moduli of dielectric thin films using an optical metrology system
    1.
    发明授权
    Measuring elastic moduli of dielectric thin films using an optical metrology system 有权
    使用光学测量系统测量介电薄膜的弹性模量

    公开(公告)号:US07019845B1

    公开(公告)日:2006-03-28

    申请号:US10960351

    申请日:2004-10-06

    IPC分类号: G01B9/02 G01B11/28

    CPC分类号: G01N21/211 G01N21/8422

    摘要: An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

    摘要翻译: 光学测量系统具有数据分析方法,以确定光学透明介电膜的弹性模量,例如二氧化硅,金属或半导体衬底上的其他碳掺杂氧化物。 使用椭偏仪测量折射率,使用激光光谱仪测量激光束的波长。 通过将聚焦在晶片表面上的光脉冲引导,测量第一组x 1,y 1和z 1,确定折射角, SUB>坐标,沿z方向移动晶片,将光脉冲引导到晶片表面上并测量第二组x 2,y 2和z 2, 2坐标,使用坐标来计算入射角,从计算的入射角计算折射角,从计算的折射角获得声速v,并使用确定的声速v,到 计算体积模量。 还提供了光学测量系统的硬件校准和调整,以便将结果从工具到工具的降低最小化到约0.5%或更低。

    MEASURING ELASTIC MODULI OF DIELECTRIC THIN FILMS USING AN OPTICAL METROLOGY SYSTEM
    2.
    发明申请
    MEASURING ELASTIC MODULI OF DIELECTRIC THIN FILMS USING AN OPTICAL METROLOGY SYSTEM 有权
    使用光学计量系统测量介质薄膜的弹性模量

    公开(公告)号:US20060072120A1

    公开(公告)日:2006-04-06

    申请号:US10960351

    申请日:2004-10-06

    IPC分类号: G01B11/02

    CPC分类号: G01N21/211 G01N21/8422

    摘要: An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

    摘要翻译: 光学测量系统具有数据分析方法,以确定光学透明介电膜的弹性模量,例如二氧化硅,金属或半导体衬底上的其他碳掺杂氧化物。 使用椭偏仪测量折射率,使用激光光谱仪测量激光束的波长。 通过将聚焦在晶片表面上的光脉冲引导,测量第一组x 1,y 1和z 1,确定折射角, SUB>坐标,沿z方向移动晶片,将光脉冲引导到晶片表面上并测量第二组x 2,y 2和z 2, 2坐标,使用坐标来计算入射角,从计算的入射角计算折射角,从计算的折射角获得声速v,并使用确定的声速v,到 计算体积模量。 还提供了光学测量系统的硬件校准和调整,以便将结果从工具到工具的降低最小化到约0.5%或更低。

    Wafer Scanning
    3.
    发明申请
    Wafer Scanning 审中-公开
    晶圆扫描

    公开(公告)号:US20100012855A1

    公开(公告)日:2010-01-21

    申请号:US11921354

    申请日:2006-06-02

    IPC分类号: G01N21/00

    CPC分类号: G01N21/9501 H01L21/67288

    摘要: A semiconductor wafer measuring device including a wafer mover adapted to move a semiconductor wafer; a measurement head adapted to scan a surface of the semiconductor wafer as the semiconductor wafer is moved by the wafer mover; and a controller. The controller is adapted to control movement of the wafer mover to provide a first scanning segment of a first portion of the surface of the semiconductor wafer without rotating the semiconductor wafer during the first scanning segment, a second scanning segment of a second different portion of the surface of the semiconductor wafer without rotating the semiconductor wafer during the second scanning segment; and rotating the semiconductor wafer between the first and second scanning segments.

    摘要翻译: 一种半导体晶片测量装置,包括适于移动半导体晶片的晶片移动器; 测量头,其适于在晶片移动器移动半导体晶片时扫描半导体晶片的表面; 和控制器。 控制器适于控制晶片移动器的运动,以在半导体晶片的表面的第一部分提供第一扫描段,而不在第一扫描段期间旋转半导体晶片,第二扫描段的第二不同部分 在第二扫描段期间不使半导体晶片旋转的半导体晶片的表面; 以及在第一和第二扫描段之间旋转半导体晶片。

    Optical demultiplexer based on three-dimensionally periodic photonic crystals
    4.
    发明授权
    Optical demultiplexer based on three-dimensionally periodic photonic crystals 有权
    基于三维周期光子晶体的光解复用器

    公开(公告)号:US06721476B2

    公开(公告)日:2004-04-13

    申请号:US10006520

    申请日:2001-12-03

    IPC分类号: G02B6293

    CPC分类号: G02B6/13 B82Y20/00 G02B6/1225

    摘要: The invention provides photonic crystal optical demultiplexer devices produced from a three-dimensionally-periodic, porous, dielectric, photonic crystalline structure, which has surfaces or interfaces that are inverse replicas of the surfaces of a monodispersed sphere array. Such a photonic crystal optical demultiplexer comprises a three-dimensionally-periodic, porous, dielectric, photonic crystalline structure, which structure has surfaces or interfaces that are inverse replicas of the surfaces of a monodispersed sphere array, wherein necks exists between neighboring spheres in said sphere array and the average sphere diameter does not exceed about 1000 nm. A first optical waveguide is positioned to direct a broad wavelength band of incident light onto the crystalline structure. A second optical waveguide positioned to receive a narrow wavelength band of reflected light from the crystalline structure.

    摘要翻译: 本发明提供由三维周期性,多孔的电介质的光子晶体结构产生的光子晶体光解复用器,其具有与单分散球阵列的表面相反的副本的表面或界面。 这种光子晶体光解复用器包括三维周期性,多孔的电介质的光子晶体结构,该结构具有表面或界面,其是单分散球体阵列的表面的反向复制,其中颈部存在于所述球体中的相邻球体之间 阵列,平均球体直径不超过约1000nm。 第一光波导被定位成将入射光的宽波长带引导到晶体结构上。 定位成接收来自晶体结构的反射光的窄波长带的第二光波导。