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    Measuring elastic moduli of dielectric thin films using an optical metrology system
    1.
    发明授权
    Measuring elastic moduli of dielectric thin films using an optical metrology system 有权
    使用光学测量系统测量介电薄膜的弹性模量

    公开(公告)号：US07019845B1

    公开(公告)日：2006-03-28

    申请号：US10960351

    申请日：2004-10-06

    申请人： Sean P. Leary ,  Guray Tas ,  Christopher J. Morath ,  Michael Kotelyanskii ,  Tong Zheng ,  Guenadiy Lazarov ,  Andre D. Miller ,  George A. Antonelli ,  Jamie I. Ludke

    发明人： Sean P. Leary ,  Guray Tas ,  Christopher J. Morath ,  Michael Kotelyanskii ,  Tong Zheng ,  Guenadiy Lazarov ,  Andre D. Miller ,  George A. Antonelli ,  Jamie I. Ludke

    IPC分类号： G01B9/02 ,  G01B11/28

    CPC分类号： G01N21/211 ,  G01N21/8422

    摘要： An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

    摘要翻译： 光学测量系统具有数据分析方法，以确定光学透明介电膜的弹性模量，例如二氧化硅，金属或半导体衬底上的其他碳掺杂氧化物。 使用椭偏仪测量折射率，使用激光光谱仪测量激光束的波长。 通过将聚焦在晶片表面上的光脉冲引导，测量第一组x 1，y 1和z 1，确定折射角， SUB>坐标，沿z方向移动晶片，将光脉冲引导到晶片表面上并测量第二组x 2，y 2和z 2， 2坐标，使用坐标来计算入射角，从计算的入射角计算折射角，从计算的折射角获得声速v，并使用确定的声速v，到 计算体积模量。 还提供了光学测量系统的硬件校准和调整，以便将结果从工具到工具的降低最小化到约0.5％或更低。

    MEASURING ELASTIC MODULI OF DIELECTRIC THIN FILMS USING AN OPTICAL METROLOGY SYSTEM
    2.
    发明申请
    MEASURING ELASTIC MODULI OF DIELECTRIC THIN FILMS USING AN OPTICAL METROLOGY SYSTEM 有权
    使用光学计量系统测量介质薄膜的弹性模量

    公开(公告)号：US20060072120A1

    公开(公告)日：2006-04-06

    申请号：US10960351

    申请日：2004-10-06

    申请人： Sean Leary ,  Guray Tas ,  Christopher Morath ,  Michael Kotelyanskii ,  Tong Zheng ,  Guenadiy Lazarov ,  Andre Miller ,  George Antonelli ,  Jamie Ludke

    发明人： Sean Leary ,  Guray Tas ,  Christopher Morath ,  Michael Kotelyanskii ,  Tong Zheng ,  Guenadiy Lazarov ,  Andre Miller ,  George Antonelli ,  Jamie Ludke

    IPC分类号： G01B11/02

    CPC分类号： G01N21/211 ,  G01N21/8422

    摘要： An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

    摘要翻译： 光学测量系统具有数据分析方法，以确定光学透明介电膜的弹性模量，例如二氧化硅，金属或半导体衬底上的其他碳掺杂氧化物。 使用椭偏仪测量折射率，使用激光光谱仪测量激光束的波长。 通过将聚焦在晶片表面上的光脉冲引导，测量第一组x 1，y 1和z 1，确定折射角， SUB>坐标，沿z方向移动晶片，将光脉冲引导到晶片表面上并测量第二组x 2，y 2和z 2， 2坐标，使用坐标来计算入射角，从计算的入射角计算折射角，从计算的折射角获得声速v，并使用确定的声速v，到 计算体积模量。 还提供了光学测量系统的硬件校准和调整，以便将结果从工具到工具的降低最小化到约0.5％或更低。

    CHARACTERIZATION WITH PICOSECOND ULTRASONICS OF METAL PORTIONS OF SAMPLES POTENTIALLY SUBJECT TO EROSION
    3.
    发明申请
    CHARACTERIZATION WITH PICOSECOND ULTRASONICS OF METAL PORTIONS OF SAMPLES POTENTIALLY SUBJECT TO EROSION 有权
    表征可能潜在腐蚀的样品金属部分的PICOSECOND超声波

    公开(公告)号：US20100281981A1

    公开(公告)日：2010-11-11

    申请号：US12449837

    申请日：2008-02-28

    申请人： Guray Tas ,  Sean P. Leary ,  Dario Alliata ,  Jana Clerico ,  Priya Mukundhan ,  Zhongning Dai

    发明人： Guray Tas ,  Sean P. Leary ,  Dario Alliata ,  Jana Clerico ,  Priya Mukundhan ,  Zhongning Dai

    IPC分类号： G01H17/00

    CPC分类号： G01N21/1717 ,  G01N21/95684 ,  G01N29/2418 ,  G01N2021/1725 ,  G01N2021/8416 ,  G01N2021/95638

    摘要： A method for evaluating a manufacturing process is described. The method includes generating an optical pump beam pulse and directing the optical pump beam pulse to a surface of a sample. A probe pulse is generated and directed the probe pulse to the surface of the sample. A probe pulse response signal is detected. A change in the probe pulse varying in response to the acoustic signal forms the probe pulse response signal. An evaluation of one or more manufacturing process steps used to create the sample is made based upon the probe pulse response signal. Additionally the method may be used for process control of a CMP process. Apparatus are also described.

    摘要翻译： 对制造工序的评价方法进行说明。 该方法包括产生光泵浦波束脉冲并将光泵浦波束脉冲引导到样品的表面。 产生探针脉冲并将探针脉冲引导到样品的表面。 探测脉冲响应信号。 响应于声信号变化的探针脉冲的变化形成探针脉冲响应信号。 基于探针脉冲响应信号进行用于产生样品的一个或多个制造工艺步骤的评估。 另外，该方法可以用于CMP过程的过程控制。 还描述了装置。

    Combination of ellipsometry and optical stress generation and detection
    5.
    发明申请
    Combination of ellipsometry and optical stress generation and detection 有权
    椭圆偏振光学和光学应力产生与检测的组合

    公开(公告)号：US20090244516A1

    公开(公告)日：2009-10-01

    申请号：US12309166

    申请日：2007-07-09

    申请人： Manjusha Mehendale ,  Michael J. Kotelyanskii ,  Yanwen Hou ,  Jim Onderko ,  Guray Tas

    发明人： Manjusha Mehendale ,  Michael J. Kotelyanskii ,  Yanwen Hou ,  Jim Onderko ,  Guray Tas

    IPC分类号： G01B11/16

    CPC分类号： G01N21/211 ,  G01N21/636 ,  G01N21/8422 ,  G01N21/9501 ,  G01N21/956

    摘要： A method includes selecting one of performing ellipsometry or performing optical stress generation and detection. The method also includes, in response to selecting performing ellipsometry, applying at least one first control signal to a controllable retarder that modifies at least polarization of a light beam, and performing ellipsometry using the modified light beam. The method further includes, in response to selecting performing optical stress generation and detection, applying at least one second control signal to the controllable retarder, and performing optical stress generation and detection using the modified light beam. Apparatus and computer readable media are also disclosed.

    摘要翻译： 一种方法包括选择执行椭偏仪或执行光学应力产生和检测之一。 该方法还包括响应于选择执行椭偏仪，将至少一个第一控制信号施加到至少修改光束的偏振的可控延迟器，以及使用修改的光束执行椭偏仪。 该方法还包括响应于选择执行光应力产生和检测，向可控延迟器施加至少一个第二控制信号，并且使用修改的光束进行光应力产生和检测。 还公开了装置和计算机可读介质。

    Control of stray radiation in a CVD chamber
    6.
    发明授权
    Control of stray radiation in a CVD chamber 有权
    控制CVD室中的杂散辐射

    公开(公告)号：US09085824B2

    公开(公告)日：2015-07-21

    申请号：US13531220

    申请日：2012-06-22

    申请人： Guray Tas ,  Jing Zhou ,  Daewon Kwon

    发明人： Guray Tas ,  Jing Zhou ,  Daewon Kwon

    IPC分类号： G01J5/00 ,  C23C16/46 ,  C23C16/52

    CPC分类号： G01J5/06 ,  C23C16/18 ,  C23C16/4582 ,  C23C16/46 ,  C23C16/481 ,  C23C16/52 ,  Y10T29/49826

    摘要： An apparatus and method for controlling stray radiation within a CVD chamber. A heater array disposed beneath a wafer carrier for radiatively heating of the wafer carrier includes a peripheral or outermost heating element or elements. Scattered radiation originating from a designated segment of the peripheral heating element(s) can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. In one embodiment, an electrical connector on a resistance heating element provides the reduced emission from the designated segment. It has been found that radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment is subject to less stray radiation, thus providing a more reliable temperature reading in the optical wavelengths.

    摘要翻译： 一种用于控制CVD室内杂散辐射的装置和方法。 设置在晶片载体下面用于辐射加热晶片载体的加热器阵列包括外围或最外面的加热元件。 来自外围加热元件的指定片段的散射辐射可以通过几种机制之一来局部地减少，包括减少指定片段的发射（例如，操作温度），或者捕获或偏转源的一部分辐射 从指定的段。 在一个实施例中，电阻加热元件上的电连接器提供来自指定段的减少的发射。 已经发现，靠近从晶片载体的中心延伸并跨越指定的区段的轴固定的辐射温度计经受更少的杂散辐射，从而在光波长中提供更可靠的温度读数。

    Radiation thermometer using off-focus telecentric optics
    7.
    发明授权
    Radiation thermometer using off-focus telecentric optics 有权
    辐射温度计使用离焦远心光学

    公开(公告)号：US09448119B2

    公开(公告)日：2016-09-20

    申请号：US13531162

    申请日：2012-06-22

    申请人： Guray Tas ,  Jing Zhou ,  Daewon Kwon

    发明人： Guray Tas ,  Jing Zhou ,  Daewon Kwon

    IPC分类号： G01J5/00 ,  G01J5/08 ,  G01J5/06 ,  C23C16/44

    CPC分类号： G01J5/0831 ,  C23C16/44 ,  G01J5/0007 ,  G01J5/06 ,  G01J5/0806 ,  G01J5/0859

    摘要： A radiation thermometer utilizing an off-focus telecentric lens arrangement in chemical vapor deposition reactors. An object assembly of one or more optical components is positioned at a distance equal to its focal length from an aperture stop. The aperture stop is dimensioned so that the chief rays are substantially parallel with the optical axis of the object assembly, and so that the rays that pass through the aperture stop define a narrow solid angle about the chief rays. The off-focus telecentric arrangement thus configured is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation, particularly with targets having a highly specular surface.

    摘要翻译： 在化学气相沉积反应器中使用离焦远心透镜装置的辐射温度计。 一个或多个光学部件的物体组件被定位成等于其孔径光阑的焦距的距离。 孔径光阑的尺寸使得主光线基本上与物体组件的光轴平行，并且使得穿过孔径光阑的光线围绕主光线限定窄的立体角。 如此构造的离焦远心布置被聚焦在无限远处，但是被用于从不相关的相对近的目标（例如，在几米内）捕获辐射。 来自目标的准直辐射的捕获减少了杂散辐射的贡献，特别是具有高度镜面的目标。

    RADIATION THERMOMETER USING OFF-FOCUS TELECENTRIC OPTICS
    8.
    发明申请
    RADIATION THERMOMETER USING OFF-FOCUS TELECENTRIC OPTICS 有权
    辐射温度计使用非聚焦光谱

    公开(公告)号：US20130343425A1

    公开(公告)日：2013-12-26

    申请号：US13531162

    申请日：2012-06-22

    申请人： Guray Tas ,  Jing Zhou ,  Daewon Kwon

    发明人： Guray Tas ,  Jing Zhou ,  Daewon Kwon

    IPC分类号： G01J5/02

    CPC分类号： G01J5/0831 ,  C23C16/44 ,  G01J5/0007 ,  G01J5/06 ,  G01J5/0806 ,  G01J5/0859

    摘要： A radiation thermometer utilizing an off-focus telecentric lens arrangement in chemical vapor deposition reactors. An object assembly of one or more optical components is positioned at a distance equal to its focal length from an aperture stop. The aperture stop is dimensioned so that the chief rays are substantially parallel with the optical axis of the object assembly, and so that the rays that pass through the aperture stop define a narrow solid angle about the chief rays. The off-focus telecentric arrangement thus configured is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation, particularly with targets having a highly specular surface.

    摘要翻译： 在化学气相沉积反应器中使用离焦远心透镜装置的辐射温度计。 一个或多个光学部件的物体组件被定位成等于其孔径光阑的焦距的距离。 孔径光阑的尺寸使得主光线基本上与物体组件的光轴平行，并且使得穿过孔径光阑的光线围绕主光线限定窄的立体角。 如此构造的离焦远心布置被聚焦在无限远处，但是被用于从不相关的相对近的目标（例如，在几米内）捕获辐射。 来自目标的准直辐射的捕获减少了杂散辐射的贡献，特别是具有高度镜面的目标。