公开(公告)号：US07790630B2

公开(公告)日：2010-09-07

申请号：US11105036

申请日：2005-04-12

Applicant: Michael D. Goodner ,  George A. Antonelli

Inventor： Michael D. Goodner ,  George A. Antonelli

IPC: H01L21/469

CPC classification number: H01L21/02167 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02345 ,  H01L21/02351 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76808

Abstract: A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of carbon-to-silicon in the silicon-doped carbon matrix.

Abstract translation: 公开了硅氧烷掺杂碳层间电介质（ILD）及其形成方法。 ILD的介电常数和/或其机械强度可以通过改变硅掺杂碳基体中碳 - 硅的比例来定制。

公开(公告)号：US20110111533A1

公开(公告)日：2011-05-12

申请号：US12646830

申请日：2009-12-23

Applicant: Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

Inventor： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

IPC: H01L21/02 ,  B08B3/00

CPC classification number: H01L21/67115 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76883

Abstract: Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.

Abstract translation: 用紫外线辐射和还原剂处理含碳低k电介质可以进行过程诱导的损伤修复。 此外，用还原剂和紫外线辐射进行处理有效地通过从具有或不具有低分子量的处理的晶片的平坦化表面除去金属氧化物（例如氧化铜）和/或CMP浆料的有机残余物来清洁经处理的晶片表面， k电介质。 本发明的方法特别适用于在镶嵌加工以恢复在加工期间损坏的电介质的损失的低k性质，即预金属化，后平面化或两者之中，和/或提供有效的后平面化表面清洁 以改善随后施加的介电阻挡层和/或其它层的粘合性。

公开(公告)号：US10037905B2

公开(公告)日：2018-07-31

申请号：US12646830

申请日：2009-12-23

Applicant: Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

Inventor： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768

CPC classification number: H01L21/67115 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76883

Abstract: Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.

公开(公告)号：US20130323930A1

公开(公告)日：2013-12-05

申请号：US13482786

申请日：2012-05-29

Applicant: Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

Inventor： Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

IPC: H01L21/02

CPC classification number: H01L21/02107 ,  H01L21/02074 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883

Abstract: Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps.

Abstract translation: 提供了用于在相邻导电线之间的互连层中形成气隙的方法和系统。 可以在导电线的暴露表面上选择性地形成保护层，而线之间的结构可以保持不受保护。 这些结构可以由稍后去除以形成空隙的牺牲材料制成。 在某些实施方案中，结构被可渗透的非保护层覆盖，其允许蚀刻剂和蚀刻产物在去除期间通过。 当具有选择性形成的保护层的工件暴露于气体或液体蚀刻剂时，这些蚀刻剂在不蚀刻或以其他方式冲击金属线的情况下去除牺牲材料。 然后可以在这些线之间形成的空隙部分地填充有电介质材料以密封空隙和/或保护金属线的侧面。 附加的互连层可以形成在包含气隙的处理层之上。

公开(公告)号：US07019845B1

公开(公告)日：2006-03-28

申请号：US10960351

申请日：2004-10-06

Applicant: Sean P. Leary ,  Guray Tas ,  Christopher J. Morath ,  Michael Kotelyanskii ,  Tong Zheng ,  Guenadiy Lazarov ,  Andre D. Miller ,  George A. Antonelli ,  Jamie I. Ludke

Inventor： Sean P. Leary ,  Guray Tas ,  Christopher J. Morath ,  Michael Kotelyanskii ,  Tong Zheng ,  Guenadiy Lazarov ,  Andre D. Miller ,  George A. Antonelli ,  Jamie I. Ludke

IPC: G01B9/02 ,  G01B11/28

CPC classification number: G01N21/211 ,  G01N21/8422

Abstract: An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

Abstract translation: 光学测量系统具有数据分析方法，以确定光学透明介电膜的弹性模量，例如二氧化硅，金属或半导体衬底上的其他碳掺杂氧化物。 使用椭偏仪测量折射率，使用激光光谱仪测量激光束的波长。 通过将聚焦在晶片表面上的光脉冲引导，测量第一组x 1，y 1和z 1，确定折射角， SUB>坐标，沿z方向移动晶片，将光脉冲引导到晶片表面上并测量第二组x 2，y 2和z 2， 2坐标，使用坐标来计算入射角，从计算的入射角计算折射角，从计算的折射角获得声速v，并使用确定的声速v，到 计算体积模量。 还提供了光学测量系统的硬件校准和调整，以便将结果从工具到工具的降低最小化到约0.5％或更低。