摘要:
An adaptive phase-lead compensation (zero) circuit is disclosed that can be added to a circuit (e.g., a CMOS-based LDO) to ease the compensation and increase the phase margin of the circuit. By using the disclosed adaptive phase-lead compensation circuit, an adjustable resistance can be connected to any nodes in the compensated circuit rather than just to the voltage source (VDD) or ground (GND), allowing the Miller Effect to be used via a Miller capacitor.
摘要:
An adaptive phase-lead compensation (zero) circuit is disclosed that can be added to a circuit (e.g., a CMOS-based LDO) to ease the compensation and increase the phase margin of the circuit. By using the disclosed adaptive phase-lead compensation circuit, an adjustable resistance can be connected to any nodes in the compensated circuit rather than just to the voltage source (VDD) or ground (GND), allowing the Miller Effect to be used via a Miller capacitor.
摘要:
A step down voltage regulator with bypass comprised of devices designed to operate over a maximum rated voltage lower than a supply voltage. The regulator includes an output regulation device coupled to the supply voltage and an output. An output device protection circuit is provided which is responsive to the supply voltage and the output to ensure that the maximum rated voltage of the output regulation device is not exceeded. A bypass circuit having a bypass output device and being coupled to the supply voltage is provided with a protection circuit. The output regulation devices comprise p-channel transistors, and may have an operating maximum rated voltage in a range of 2.7-3.6 volts with the supply voltage is in a range of 4.4-5.25 volts, or 2.9-3.5 volts.
摘要:
A memory device includes a voltage regulator, whose output provides a voltage supply for various other components of the memory device, including a command user interface. The memory device is placed into an ultra-deep power-down mode by providing to the memory device a software command, which causes the output of the voltage regulator to be disabled. To bring the memory device out of the ultra-deep power-down mode, a chip select signal is provided to the memory device, which includes a wake-up circuit that remains powered on even when the memory device is in the ultra-deep power-down mode. Receipt of the chip select signal while the memory device is in the ultra-deep power-down mode causes the output of the voltage regulator to be enabled, thereby providing power to the components that were completely powered down.
摘要:
A plurality of separately powered data interface circuits, a controller circuit, and power switch circuits that collectively enable a supply of power to only one of the data interface circuits and disable the supply of power to the other data interface circuits.
摘要:
A new approach for managing turn-on of power islands uses a precharge phase to begin the process of bringing up the island's internal supply voltage, while minimizing transients and associated power-control-logic instability.
摘要:
A new approach for managing turn-on of power islands uses a precharge phase to begin the process of bringing up the island's internal supply voltage, while minimizing transients and associated power-control-logic instability.
摘要:
A step down voltage regulator including devices designed to operate over a maximum rated voltage lower than the supply voltage. The regulator comprises an output regulation device coupled to the supply voltage and an output; and an output device protection circuit responsive to the supply voltage and the output to ensure that the maximum rated voltage of the output device is not exceeded. Also provided is a method for operating a voltage regulator in a memory system. The method includes the steps of: providing a voltage regulator having an input and an output, and including a plurality of devices operating at a maximum rated voltage less than the voltage provided at the input; and controlling the gate voltage of the output device responsive to a load on the regulator output, so that the maximum rated voltage is not exceeded.
摘要:
A method for operating an electronic product having an application specific semiconductor circuit (ASIC) including in its circuitry both a linear regulator module for use with an optional external capacitance and a capless regulator module coupled to internal capacitance of the product selects a low-power sub-module or high-power sub-module of the capless regulator module for use in a power-up phase of the ASIC. Control logic of the ASIC determines if an external capacitance is present. If so, then the high-power capless sub-module is used during a power-up phase of the ASIC; if not only the low-power capless sub-module is used during the power-up phase of the ASIC. After power-up of the ASIC, the control logic may select the linear regulator module for certain times of operation and the capless regulator module for other times of operation or it may select one or the other for all times of post-power-up operation.
摘要:
An electronic product includes an application specific semiconductor circuit (ASIC) including in its circuitry both a linear regulator module for use with an optional external capacitance and a capless regulator module coupled to internal capacitance of the product. The capless regulator module includes both a low-power sub-module and a high-power sub-module. Control logic of the ASIC is configured to determine if an external capacitance is present. If so, the control logic causes the high-power capless regulator sub-module to be used during a power-up phase of the ASIC; if not, only the low-power capless regulator sub-module is used during the power-up phase of the ASIC. After power-up of the ASIC, the control logic may select the linear regulator module for certain times of operation and the capless regulator module for other times of operation or it may select one or the other for all times of post-power-up operation.