公开(公告)号：US07183212B2

公开(公告)日：2007-02-27

申请号：US10898252

申请日：2004-07-26

申请人： Seiichi Kondo ,  Masaaki Fujimori ,  Noriyuki Sakuma ,  Yoshio Homma

发明人： Seiichi Kondo ,  Masaaki Fujimori ,  Noriyuki Sakuma ,  Yoshio Homma

IPC分类号： H01L21/302

CPC分类号： C23F1/18 ,  C09G1/04 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

摘要翻译： 描述了适用于电子电路器件的多层金属化的抛光技术，其包括用包含氧化物质，磷酸和保护层形成剂的抛光液抛光金属膜。 本发明能够在抑制划痕，分层，凹陷或侵蚀的发生的同时以高的去除率对金属膜进行研磨。

公开(公告)号：US06750128B2

公开(公告)日：2004-06-15

申请号：US10396410

申请日：2003-03-26

申请人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

发明人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

IPC分类号： H01L213205

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  H01L21/7684

摘要： The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

摘要翻译： 本发明提供减少和抑制划痕和分层，抑制和控制凹陷和侵蚀的发展并以高抛光速率抛光的技术。 使用包含氧化剂，磷酸，有机酸，形成抑制层的化学品和水的抛光溶液进行抛光。

公开(公告)号：US06596638B1

公开(公告)日：2003-07-22

申请号：US09618999

申请日：2000-07-18

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。 在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US06899603B2

公开(公告)日：2005-05-31

申请号：US10768672

申请日：2004-02-02

申请人： Yoshio Homma ,  Seiichi Kondo ,  Noriyuki Sakuma ,  Youhei Yamada ,  Takeshi Kimura ,  Hiroki Nezu

发明人： Yoshio Homma ,  Seiichi Kondo ,  Noriyuki Sakuma ,  Youhei Yamada ,  Takeshi Kimura ,  Hiroki Nezu

IPC分类号： B24B37/005 ,  B24B37/04 ,  B24B37/30 ,  B24B37/32 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/30

摘要： In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

摘要翻译： 在具有带有流体按压机构的盖体的抛光装置中，在抛光期间，通过减小保持器和膜之间的粘附力来防止在保持器和在研磨台板的旋转下游产生的膜之间的粘着部分的振动和迁移， 小于通过盖体旋转进行晶片抛光所需的力。

公开(公告)号：US06774041B1

公开(公告)日：2004-08-10

申请号：US09637570

申请日：2000-08-14

申请人： Seiichi Kondo ,  Masaaki Fujimori ,  Noriyuki Sakuma ,  Yoshio Homma

发明人： Seiichi Kondo ,  Masaaki Fujimori ,  Noriyuki Sakuma ,  Yoshio Homma

IPC分类号： H01L21302

CPC分类号： C23F1/18 ,  C09G1/04 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

公开(公告)号：US06562719B2

公开(公告)日：2003-05-13

申请号：US09828919

申请日：2001-04-10

申请人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

发明人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  H01L21/7684

摘要： The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

公开(公告)号：US06326299B1

公开(公告)日：2001-12-04

申请号：US09361989

申请日：1999-07-28

申请人： Yoshio Homma ,  Seiichi Kondo ,  Noriyuki Sakuma ,  Naofumi Ohashi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada

发明人： Yoshio Homma ,  Seiichi Kondo ,  Noriyuki Sakuma ,  Naofumi Ohashi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada

IPC分类号： H01L214763

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/7684

摘要： In order to suppress an increase of depressions, etc. to occur on a copper based alloy layer during polishing when a copper based alloy inlaid wiring is formed with the damascene method in grooves formed in an insulating film, the polishing rate for the lower metallic layer is set not less than five times faster than the etching rate for the same and the polishing rate for the insulating film is set lower than the polishing rate for the lower metallic layer when the upper metallic layer 13 to become a wiring and the lower metallic layer 12 to become a barrier are polished respectively. Thus, the object damascene wiring can be formed with less erosion on each of insulating layers and dishing on each of metallic layers respectively.

摘要翻译： 为了抑制在绝缘膜中形成的槽中以镶嵌法形成铜基合金镶嵌布线时在抛光期间在铜基合金层上发生的凹陷等的增加，下金属层的研磨速度 设定为比其蚀刻速度快五倍以上，并且当上金属层13成为布线时，绝缘膜的抛光速率被设定为低于下金属层的抛光速率，下金属层 12成为屏障分别抛光。 因此，对象镶嵌布线可以分别形成在绝缘层和每个金属层上的凹陷上较少的侵蚀。

公开(公告)号：US07563716B2

公开(公告)日：2009-07-21

申请号：US11693383

申请日：2007-03-29

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21/302

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US20070167015A1

公开(公告)日：2007-07-19

申请号：US11693383

申请日：2007-03-29

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： H01L21/302 ,  C03C15/00 ,  C23F1/00 ,  H01L21/461

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

公开(公告)号：US20070029285A1

公开(公告)日：2007-02-08

申请号：US11581375

申请日：2006-10-17

申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

IPC分类号： C03C15/00 ,  H01L21/461 ,  H01L21/302 ,  B44C1/22

CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.