公开(公告)号：US06677167B2

公开(公告)日：2004-01-13

申请号：US10086722

申请日：2002-03-04

申请人： Seiichiro Kanno ,  Hironobu Kawahara ,  Mitsuru Suehiro ,  Saburou Kanai ,  Toshio Masuda

发明人： Seiichiro Kanno ,  Hironobu Kawahara ,  Mitsuru Suehiro ,  Saburou Kanai ,  Toshio Masuda

IPC分类号： H01L2166

CPC分类号： H01L21/67109

摘要： A wafer processing apparatus comprising a wafer stage, wherein a semiconductor wafer is mounted on the wafer stage so as to process the semiconductor wafer, wherein a holding mechanism of the wafer stage is commonly used for a plurality of wafer stages, and accordingly, the wafer stage can be changed into a wafer stage having a different function so as to process the semiconductor wafer.

摘要翻译： 一种晶片处理装置，包括晶圆台，其中半导体晶片安装在晶片台上以便处理半导体晶片，其中晶片台的保持机构通常用于多个晶片台，因此，晶片 可以将阶段改变为具有不同功能的晶片台，以便处理半导体晶片。

公开(公告)号：US06923885B2

公开(公告)日：2005-08-02

申请号：US10732286

申请日：2003-12-11

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

摘要翻译： 一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔 气体通过该气体流入真空室。 光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

公开(公告)号：US07686917B2

公开(公告)日：2010-03-30

申请号：US11780014

申请日：2007-07-19

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

摘要翻译： 等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。 该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。 直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光 通过通孔。 光发射器相对于板的后表面独立地可拆卸。

公开(公告)号：US20060191482A1

公开(公告)日：2006-08-31

申请号：US11074717

申请日：2005-03-09

申请人： Seiichiro Kanno ,  Junichi Tanaka ,  Go Miya ,  Tsunehiko Tsubone ,  Akitaka Makino ,  Toshio Masuda

发明人： Seiichiro Kanno ,  Junichi Tanaka ,  Go Miya ,  Tsunehiko Tsubone ,  Akitaka Makino ,  Toshio Masuda

IPC分类号： C23C16/00

CPC分类号： H01L21/32137 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109

摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.

摘要翻译： 提供能够在晶片内获得均匀的CD分布的晶片处理装置。 晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和 控制电脑。 控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。 线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

公开(公告)号：US20060291132A1

公开(公告)日：2006-12-28

申请号：US11370102

申请日：2006-03-08

申请人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Masakazu Isozaki ,  Toshio Masuda ,  Go Miya ,  Hiroho Kitada ,  Tooru Aramaki

发明人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Masakazu Isozaki ,  Toshio Masuda ,  Go Miya ,  Hiroho Kitada ,  Tooru Aramaki

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.

摘要翻译： 以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。 此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。 静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极 通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

公开(公告)号：US07169254B2

公开(公告)日：2007-01-30

申请号：US10732285

申请日：2003-12-11

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

摘要翻译： 一种等离子体处理装置，其具有设置在真空室内的样品台和与放置在样品台上并提供电力的样品相对设置的板构件。 使用在样品台和板构件之间产生的等离子体处理样品，并且测量端口设置在板构件的后侧。 测量端口包括从样品表面接收光的光发射器，以及在真空室的大气侧和真空侧之间进行真空密封的密封件。

公开(公告)号：US06815365B2

公开(公告)日：2004-11-09

申请号：US09983946

申请日：2001-10-26

申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

IPC分类号： H01L21302

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

摘要翻译： 一种用于蚀刻在具有侧壁的蚀刻室内的样品的等离子体蚀刻方法，保持在侧壁内侧的可更换夹套，以及靠近可更换护套顶端的加热机构，用于产生朝向蚀刻内部辐射的热量 房间。 等离子体蚀刻方法还包括通过抽气系统对蚀刻室进行排气的步骤，向蚀刻室供给蚀刻气体的步骤，产生用于在蚀刻室中进行蚀刻的等离子体的工序，以及工序 在产生等离子体的步骤的初始阶段期间通过加热机构进行加热操作。

公开(公告)号：US06171438B2

公开(公告)日：2001-01-09

申请号：US09227332

申请日：1999-01-08

申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

IPC分类号： C23C1600

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.

摘要翻译： 一种等离子体蚀刻装置，包括真空处理室，等离子体产生装置，用于向处理室供应处理气体的处理气体供应源，用于保持真空处理室中待处理样品的电极和用于减少处理气体的排气系统 真空处理室的压力。 处理气体包括至少一种具有通过等离子体放电形成聚合膜的组成的气体，其中处理气体通过在处理室中的等离子体放电而制成。 与处理室中的等离子体接触的处理室的内壁表面的至少一个表面和内部部件的表面被控制到比待处理样品的温度低的预定温度，并且强 聚合膜形成在处理室的内壁表面上。

公开(公告)号：US20050236109A1

公开(公告)日：2005-10-27

申请号：US11156477

申请日：2005-06-21

申请人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

发明人： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

IPC分类号： C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32504 ,  H01J37/32522 ,  H01J2237/022

摘要： A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

摘要翻译： 等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。 该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制 板的温度达到预定值。 该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。

公开(公告)号：US06755932B2

公开(公告)日：2004-06-29

申请号：US09788463

申请日：2001-02-21

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H05H100

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.

摘要翻译： 本发明的目的是提供一种等离子体处理装置，其中在处理室中产生等离子体以处理样品。 所述等离子体处理装置的特征还在于，在安装在与样品相对布置的UHF天线上的板上形成多个紧密堆积的通孔，光发射器几乎与通孔背面几乎接触，并且 光传输装置设置在所述光发射机的另一端，借助于测量仪器通过光发射机和光传输装置测量来自样本和等离子体的光信息。 即使在长期放电过程中也不会对通孔发生异常放电或颗粒污染，并且在光发射机的端面处的光学性能不会劣化。 所述等离子体处理装置长时间保证对样品和等离子体表面的状态的稳定和高精度的测量。