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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09935363B2

    公开(公告)日：2018-04-03

    申请号：US14220178

    申请日：2014-03-20

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Teruyuki Fujii ,  Kazuya Hanaoka

    IPC分类号： H01Q1/38 ,  H01Q1/36 ,  H01Q1/22 ,  H01Q9/27

    CPC分类号： H01Q1/364 ,  H01Q1/2225 ,  H01Q1/38 ,  H01Q9/27

    摘要： In a semiconductor device in which a copper plating layer is used for a conductor of an antenna and in which an integrated circuit and the antenna are formed over the same substrate, an object is to prevent an adverse effect on electrical characteristics of a circuit element due to diffusion of copper, as well as to provide a copper plating layer with favorable adhesiveness. Another object is to prevent a defect in the semiconductor device that stems from poor connection between the antenna and the integrated circuit, in the semiconductor device in which the integrated circuit and the antenna are formed over the same substrate. In the semiconductor device, a copper plating layer is used for the antenna, an alloy of Ag, Pd, and Cu is used for a seed layer thereof, and TiN or Ti is used for a barrier layer.

    Semiconductor device and manufacturing method thereof
    5.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US10069014B2

    公开(公告)日：2018-09-04

    申请号：US14492559

    申请日：2014-09-22

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Teruyuki Fujii ,  Sho Nagamatsu

    IPC分类号： H01L23/00 ,  H01L29/36 ,  H01L29/786 ,  H01L29/66

    摘要： A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140203978A1

    公开(公告)日：2014-07-24

    申请号：US14220178

    申请日：2014-03-20

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Teruyuki Fujii ,  Kazuya Hanaoka

    IPC分类号： H01Q1/36

    CPC分类号： H01Q1/364 ,  H01Q1/2225 ,  H01Q1/38 ,  H01Q9/27

    摘要： In a semiconductor device in which a copper plating layer is used for a conductor of an antenna and in which an integrated circuit and the antenna are formed over the same substrate, an object is to prevent an adverse effect on electrical characteristics of a circuit element due to diffusion of copper, as well as to provide a copper plating layer with favorable adhesiveness. Another object is to prevent a defect in the semiconductor device that stems from poor connection between the antenna and the integrated circuit, in the semiconductor device in which the integrated circuit and the antenna are formed over the same substrate. In the semiconductor device, a copper plating layer is used for the antenna, an alloy of Ag, Pd, and Cu is used for a seed layer thereof, and TiN or Ti is used for a barrier layer.

    摘要翻译： 在其中使用镀铜层用于天线的导体并且集成电路和天线形成在同一衬底上的半导体器件中，目的是防止对电路元件的电特性的不利影响 铜的扩散，以及提供具有良好粘合性的镀铜层。 另一个目的是在集成电路和天线形成在同一衬底上的半导体器件中，防止由于天线和集成电路之间的不良连接导致的半导体器件中的缺陷。 在半导体装置中，使用铜电镀层作为天线，使用Ag，Pd，Cu的合金作为种子层，使用TiN或Ti作为阻挡层。