-
公开(公告)号:US20240183054A1
公开(公告)日:2024-06-06
申请号:US18437317
申请日:2024-02-09
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Teppei OGUNI , Takeshi OSADA , Toshihiko TAKEUCHI
IPC: C25D13/02 , B82Y30/00 , C25D13/22 , H01M4/02 , H01M4/04 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M10/0525
CPC classification number: C25D13/02 , B82Y30/00 , C25D13/22 , H01M4/0416 , H01M4/0452 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/1395 , H01M4/366 , H01M4/587 , H01M10/0525 , H01M2004/027
Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.
-
公开(公告)号:US20240006682A1
公开(公告)日:2024-01-04
申请号:US18342001
申请日:2023-06-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takeshi OSADA , Yosuke TSUKAMOTO , Takayuki IKEDA
IPC: H01M10/6554 , H01M10/0525 , H01M10/48
CPC classification number: H01M10/6554 , H01M10/0525 , H01M10/488
Abstract: A power storage device that can be discharged safely and easily is provided. The power storage device includes a secondary battery covered with an exterior body, a radiator plate in contact with a surface of the exterior body, and a projection. The projection has conductivity and is held over the exterior body in the normal condition. When the projection penetrates the exterior body to be inserted into the secondary battery, the secondary battery can be short-circuited and discharged. Heat can be efficiently released from the projection to the radiator plate. Thus, the secondary battery can be discharged safely at high speed without thermal runaway.
-
公开(公告)号:US20230352687A1
公开(公告)日:2023-11-02
申请号:US18219951
申请日:2023-07-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Teppei OGUNI , Takeshi OSADA , Toshihiko TAKEUCHI , Kuniharu NOMOTO
IPC: H01M4/587 , B82Y40/00 , C25D5/48 , C25D5/50 , C25D13/02 , C25D13/12 , H01M4/04 , H01M4/133 , H01M4/1393 , H01M4/66 , H01M4/70 , B82Y30/00
CPC classification number: H01M4/587 , B82Y40/00 , C25D5/48 , C25D5/50 , C25D13/02 , C25D13/12 , H01M4/0452 , H01M4/0471 , H01M4/133 , H01M4/1393 , H01M4/66 , H01M4/70 , B82Y30/00 , Y10T428/24355 , Y02E60/10
Abstract: Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.
-
公开(公告)号:US20200185951A1
公开(公告)日:2020-06-11
申请号:US16608894
申请日:2018-04-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takeshi OSADA
Abstract: A novel semiconductor device or a semiconductor device capable of preventing overcharging is provided. A power receiving portion has a function of generating a signal for canceling a wireless signal transmitted from a power feeding portion when the charging is completed. Specifically, when the remaining battery capacity of the power receiving portion is one hundred percent or higher than or equal to a predetermined reference value, the power receiving portion has a function of generating an electromagnetic wave for canceling an electromagnetic wave transmitted from the power feeding portion. Thus, a magnetic field for canceling a magnetic field formed of the electromagnetic wave transmitted from the power feeding portion is formed, so that overcurrent in the power receiving portion can be prevented.
-
公开(公告)号:US20170133409A1
公开(公告)日:2017-05-11
申请号:US15410028
申请日:2017-01-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hidekazu MIYAIRI , Takeshi OSADA , Shunpei YAMAZAKI
IPC: H01L27/12 , H01L29/786 , H01L29/49
CPC classification number: H01L27/1225 , G02F1/1362 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3262 , H01L29/42384 , H01L29/4908 , H01L29/78606 , H01L29/78645 , H01L29/78648 , H01L29/7869
Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
-
公开(公告)号:US20150222143A1
公开(公告)日:2015-08-06
申请号:US14684645
申请日:2015-04-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takeshi OSADA , Hikaru TAMURA
CPC classification number: H02J50/12 , B60L1/00 , B60L11/1811 , B60L11/182 , G06K19/0701 , G06K19/0705 , G06K19/0723 , G06K19/0724 , G06K19/07767 , G06K19/07773 , G06K19/07779 , G06K19/07783 , H02J50/20 , H02J50/80 , H04B5/0037 , Y02D70/166 , Y02D70/26 , Y02T90/16
Abstract: An object is to provide a semiconductor device that is capable of wireless communication, such as an RFID tag, which can transmit and receive individual information without checking remaining capacity of a battery or changing batteries due to deterioration with time in the battery for a drive power supply voltage, and maintain a favorable a transmission/reception state even when electric power of an electromagnetic wave from a reader/writer is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group, a rectifier circuit-group and a battery connected to the signal processing circuit. The first antenna circuit transmits and receives a signal for transmitting data stored in the signal processing circuit and drives a power supply circuit, and each antenna circuit of the antenna circuit group receives a signal for charging the battery and includes an antenna which has a different corresponding frequency.
Abstract translation: 本发明的目的是提供能够进行无线通信的半导体装置,例如RFID标签,其能够在不检查电池的剩余容量的情况下发送和接收个别信息,或者由于电池中的驱动电力随时间的变化而改变电池 电源电压,并且即使来自读取器/写入器的电磁波的电力不足,也保持良好的发送/接收状态。 半导体器件包括信号处理电路,连接到信号处理电路的第一天线电路,天线电路组,整流器电路组和连接到信号处理电路的电池。 第一天线电路发送和接收用于发送存储在信号处理电路中的数据的信号并驱动电源电路,天线电路组的每个天线电路接收用于对电池充电的信号,并且包括具有不同对应的天线 频率。
-
公开(公告)号:US20250046937A1
公开(公告)日:2025-02-06
申请号:US18713462
申请日:2022-11-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Yasuhiro JINBO , Yosuke TSUKAMOTO , Kazutaka KURIKI , Tetsuji ISHITANI , Shuhei YOSHITOMI , Takeshi OSADA
IPC: H01M50/247 , H01M10/0525 , H01M10/42 , H01M10/48 , H01M50/238 , H01M50/284
Abstract: A safe charging environment with respect to a flexible battery capable of following the movement of a housing is provided. A flexible battery management system or an electronic device mounted with the flexible battery includes a sensor that senses a movement of the flexible battery and a charge control circuit having a function of starting charging or stopping charging of the flexible battery on the basis of a signal from the sensor; charging of the flexible battery is started using the charge control circuit when the sensor senses the flexible battery in a first mode where the flexible battery is opened and senses the flexible battery in a second mode where the flexible battery is curved.
-
公开(公告)号:US20250023362A1
公开(公告)日:2025-01-16
申请号:US18711808
申请日:2022-11-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takeshi OSADA , Tetsuya KAKEHATA , Yosuke TSUKAMOTO , Shigeru ONOYA , Noboru INOUE , Shunpei YAMAZAKI
Abstract: An electric vehicle and a system that easily recognize theft of a secondary battery of an electric vehicle typified by an electrically assisted bicycle and prevent the theft are provided. To prevent the theft of a secondary battery that can be detached from an electric vehicle typified by an electrically assisted bicycle or an electric motorcycle, mutual authentication between an electric vehicle body unit and a secondary battery unit is performed. The secondary battery unit at least includes a first memory portion storing first identification information, an authentication portion, and a wireless communication portion.
-
公开(公告)号:US20240211670A1
公开(公告)日:2024-06-27
申请号:US18591680
申请日:2024-02-29
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Teppei OGUNI , Takeshi OSADA , Takahiro FUKUTOME
IPC: G06F30/367 , G06N3/042 , G06N3/08
CPC classification number: G06F30/367 , G06N3/042 , G06N3/08
Abstract: A parameter candidate for a semiconductor element is provided. A data set of measurement data is provided to a parameter extraction portion, and a model parameter is extracted. A first netlist is provided to a circuit simulator, simulation is performed using the first netlist and the model parameter, and a first output result is output. A classification model learns the model parameter and the first output result and classifies the model parameter. A second netlist and a model parameter are provided to the circuit simulator. A variable to be adjusted is supplied to a neural network, an action value function is output, and the variable is updated. The circuit simulator performs simulation using the second netlist and the model parameter. When a second output result to be output does not satisfy conditions, a weight coefficient of the neural network is updated. When the second output result satisfies the conditions, the variable is judged to be the best candidate.
-
公开(公告)号:US20180065848A1
公开(公告)日:2018-03-08
申请号:US15810953
申请日:2017-11-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Teppei OGUNI , Takeshi OSADA , Toshihiko TAKEUCHI
IPC: B82Y30/00 , C25D13/22 , H01M4/04 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M10/0525
CPC classification number: B82Y30/00 , C25D13/02 , C25D13/22 , H01M4/0416 , H01M4/0452 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/1395 , H01M4/366 , H01M4/587 , H01M10/0525 , H01M2004/027
Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.
-
-
-
-
-
-
-
-
-