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公开(公告)号：US20180061802A1
公开(公告)日：2018-03-01
申请号：US15669159
申请日：2017-08-04
IPC分类号： H01L23/00 , H01L23/473
CPC分类号： H01L24/72 , H01L23/473 , H01L23/48
摘要： The invention relates to a power semiconductor device with a substrate with a cooling device and power semiconductor components connected thereon, having load current terminal elements and a cooling device. Pressure devices have a pressure element is arranged movably in a direction normal (N) to the substrate, and an elastic deformation element between the pressure element and a load current terminal element. The pressure element presses the assigned load current terminal element against an electrically conductive contact area of the substrate via the elastic deformation element and provides electrically conductive pressure contacting of the assigned load current terminal element with the substrate. The electrical connection of the power semiconductor device is improved.
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2.发明申请公开(公告)号：US20170092574A1
公开(公告)日：2017-03-30
申请号：US15276623
申请日：2016-09-26
发明人： Florian WAGNER , Hartmut Kulas
IPC分类号： H01L23/498 , H01L23/29 , H01L21/56 , H01L23/31 , H01L23/00
CPC分类号： H01L23/49838 , H01L21/50 , H01L21/56 , H01L23/293 , H01L23/3121 , H01L24/37 , H01L24/40 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/37599 , H01L2224/40221 , H01L2224/84201 , H01L2224/8484 , H01L2924/00014 , H01L2924/0685 , H01L2924/07025 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2224/37099
摘要： A method for producing a power-electronics switching device and a power electronic switching device produced thereby. In the power-electronics switching device, a power semiconductor component is arranged on a first region of a conductor track of a substrate. An insulating film comprising a cutout is then provided, wherein an overlap region of the insulating film, which overlap region is adjacent to the cutout, is designed to cover an edge region of the power semiconductor component. This is followed by arranging the insulating film on the substrate, with the power semiconductor component arranged on it, in such a way that the power semiconductor component is covered on all sides of its edge region by the covering region of the insulating film, wherein a further section of the insulating film covers parts of one of the conductor tracks. Finally, the connecting device is arranged.
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公开(公告)号：US10312213B2
公开(公告)日：2019-06-04
申请号：US15669159
申请日：2017-08-04
IPC分类号： H01L23/48 , H01L23/00 , H01L23/473
摘要： The invention relates to a power semiconductor device with a substrate with a cooling device and power semiconductor components connected thereon, having load current terminal elements and a cooling device. Pressure devices have a pressure element is arranged movably in a direction normal (N) to the substrate, and an elastic deformation element between the pressure element and a load current terminal element. The pressure element presses the assigned load current terminal element against an electrically conductive contact area of the substrate via the elastic deformation element and provides electrically conductive pressure contacting of the assigned load current terminal element with the substrate. The electrical connection of the power semiconductor device is improved.
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4.发明授权公开(公告)号：US09520305B2
公开(公告)日：2016-12-13
申请号：US14503303
申请日：2014-09-30
发明人： Hartmut Kulas
IPC分类号： H01L23/48 , H01L21/48 , H01L23/473 , H01L23/055 , H01L23/373 , H01L23/367 , H05K7/20 , H01L23/00
CPC分类号： H01L21/4878 , H01L21/4882 , H01L23/055 , H01L23/367 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L24/83 , H01L2224/32225 , H01L2224/83801 , H01L2224/8384 , H01L2924/13055 , H01L2924/13091 , H05K7/20927 , H01L2924/00014 , H01L2924/00
摘要： A power semiconductor device comprising a power semiconductor module and a heat sink; and a method for its manufacture. The module has a cooling plate, with an opening delimited by a lateral first surface thereof extending circumferentially around the opening. The cooling plate is arranged in the opening and has a lateral first surface which extends circumferentially around the cooling plate. The two first surfaces are at a respective angle of less than 90° with respect to a main surface of the cooling plate facing the power semiconductor components. The two first surfaces are pressed together, extending circumferentially along the first surface of the cooling plate and extending circumferentially along the first surface of the heat sink. The inventive power semiconductor device has good heat conduction from the power semiconductor components to the heat sink through which a liquid can flow, and which is reliably leaktight over the long term.
摘要翻译： 一种功率半导体器件，包括功率半导体模块和散热器; 及其制造方法。 模块具有冷却板，其开口由其横向第一表面围绕开口周向延伸。 冷却板布置在开口中并且具有围绕冷却板周向延伸的横向第一表面。 两个第一表面相对于面向功率半导体部件的冷却板的主表面具有小于90°的相应角度。 两个第一表面被压在一起，沿着冷却板的第一表面周向延伸并且沿着散热器的第一表面周向延伸。 本发明的功率半导体器件具有从功率半导体部件到散热器的良好热传导，液体可以通过该散热器流动，并且其长期可靠地密封。
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公开(公告)号：US10054615B2
公开(公告)日：2018-08-21
申请号：US15267089
申请日：2016-09-15
发明人： Alexander Schneider , Hartmut Kulas
CPC分类号： G01R15/181 , G01R1/04
摘要： A centering holding device for a Rogowski coil. The holding device comprises a virtual axis; a first cutout running from a first main side to a second main side thereof through the holding device and is arranged centrally with respect to the axis. The holding device has a channel in the shape of a circle arc around the axis and around the first cutout from a first channel opening to a second channel opening. The first cutout and the channel are coaxial relative to the axis of the holding device. The holding device has a second cutout, which leaves out an edge region of the holding device. The first and second channel openings lead into the second cutout. Furthermore, the invention relates to a method for arranging a Rogowski coil by the holding device.
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6.发明授权公开(公告)号：US09111900B2
公开(公告)日：2015-08-18
申请号：US14476299
申请日：2014-09-03
IPC分类号： H01L23/34 , H01L23/367 , H05K7/20 , H01L21/48 , H01L23/00
CPC分类号： H01L23/3675 , H01L21/4882 , H01L23/3672 , H01L23/3677 , H01L24/83 , H01L2224/83237 , H01L2224/83238 , H01L2224/83801 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/20103 , H01L2924/20104 , H05K7/20927 , H01L2924/00
摘要： A power semiconductor device comprising a power semiconductor module and a heat sink and a method for its manufacture. The heat sink has a first cooling housing component, with a cutout passing therethrough, and a second cooling housing component, with a cooling plate arranged in the cutout. The first and second cooling housing components are configured and arranged relative to one another so that a cavity is formed at the side of the cooling plate facing away from the power semiconductor components. The cooling plate is connected to the first cooling housing component by a first weld seam which extends circumferentially therearound. The first weld seam seals the cooling plate in relation to the first cooling housing component, and the second cooling housing component is connected to the first cooling housing component. The inventive power semiconductor device has good heat conduction from the power semiconductor components to a heat sink.
摘要翻译： 一种功率半导体器件，包括功率半导体模块和散热器及其制造方法。 散热器具有第一冷却壳体部件，切口穿过其中，第二冷却壳体部件具有布置在切口中的冷却板。 第一和第二冷却壳体部件相对于彼此构造和布置，使得在冷却板的远离功率半导体部件的侧面处形成空腔。 冷却板通过围绕其周向延伸的第一焊缝连接到第一冷却壳体部件。 第一焊缝相对于第一冷却壳体部件密封冷却板，并且第二冷却壳体部件连接到第一冷却壳体部件。 本发明的功率半导体器件具有从功率半导体部件到散热器的良好热传导。
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