公开(公告)号：US20240038637A1

公开(公告)日：2024-02-01

申请号：US18361502

申请日：2023-07-28

申请人： NEXPERIA B.V.

发明人： Jia Yunn Ting ,  Ting Wei Chang ,  Wing Onn Chaw

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L24/40 ,  H01L23/49551 ,  H01L24/37 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/48175 ,  H01L2224/40221 ,  H01L2224/37012 ,  H01L2224/73221 ,  H01L2224/92157

摘要： A clip structure for a packaged semiconductor device is provided. The packaged semiconductor device includes a first die portion and a second die portion being electrically isolated from the first die portion. The clip structure includes a first portion, a second portion and a gate wire bond. The first portion is electrically conductive, and the first portion is configured to integrally connect a source terminal with the first die portion. The second portion is electrically conductive and is electrically isolated from the first portion and is configured to connect to a gate terminal. The gate wire bond is configured to connect the second portion with the second die portion.

公开(公告)号：US10037964B1

公开(公告)日：2018-07-31

申请号：US15644232

申请日：2017-07-07

申请人： TAIWAN SEMICONDUCTOR CO., LTD.

发明人： Reyn Qin ,  Lucy Fan ,  Meifang Song ,  Xiaoli Wang

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01R4/02

CPC分类号： H01L24/40 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/84 ,  H01L2224/40 ,  H01L2224/4001 ,  H01L2224/4007 ,  H01L2224/40221 ,  H01L2224/40245 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2924/181 ,  H01L2924/18301 ,  H01R4/028 ,  H01R4/029 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A die-packaging component includes a substrate, a die, a jumper structure, a lead structure and a package body. The substrate has a base surface further including a die-connecting portion and a package-body retaining structure surrounding the die-connecting portion. The die connects the die-connecting portion. The jumper structure welded to the die generates a thermal deformation while in conducting a high-voltage current. The lead structure includes a lead groove defining a thermal-deformation tolerance allowable route. While in meeting the thermal deformation, the jumper structure welded to the lead groove as well is movable along the thermal-deformation tolerance allowable route. The package body at least partly covers the lead structure and the substrate, completely covers the die and the jumper structure, and is constrained by the package-body retaining structure.

公开(公告)号：US09406592B2

公开(公告)日：2016-08-02

申请号：US14735300

申请日：2015-06-10

申请人： Continental Automotive GmbH

发明人： Nico Kohl ,  Martin Metzler ,  Sven Egelkraut ,  Markus Leicht

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/49544 ,  H01L23/3735 ,  H01L23/495 ,  H01L23/49548 ,  H01L23/49838 ,  H01L23/49844 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/3756 ,  H01L2224/37639 ,  H01L2224/4001 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40106 ,  H01L2224/40221 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/73263 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/84201 ,  H01L2224/84203 ,  H01L2224/84205 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/92142 ,  H01L2224/92246 ,  H01L2924/00015 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012

摘要： A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.

摘要翻译： 功率半导体电路包括至少一个具有至少一个接触区域的半导体，以及至少一个接合导体条，其具有紧固在至少一个接触区域上的至少一个接触区域。 接合导体条的接触区域包括切口。

公开(公告)号：US20170092574A1

公开(公告)日：2017-03-30

申请号：US15276623

申请日：2016-09-26

申请人： Semikron Elektronik GmbH & Co., KG

发明人： Florian WAGNER ,  Hartmut Kulas

IPC分类号： H01L23/498 ,  H01L23/29 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49838 ,  H01L21/50 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3121 ,  H01L24/37 ,  H01L24/40 ,  H01L24/84 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/37599 ,  H01L2224/40221 ,  H01L2224/84201 ,  H01L2224/8484 ,  H01L2924/00014 ,  H01L2924/0685 ,  H01L2924/07025 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2224/37099

摘要： A method for producing a power-electronics switching device and a power electronic switching device produced thereby. In the power-electronics switching device, a power semiconductor component is arranged on a first region of a conductor track of a substrate. An insulating film comprising a cutout is then provided, wherein an overlap region of the insulating film, which overlap region is adjacent to the cutout, is designed to cover an edge region of the power semiconductor component. This is followed by arranging the insulating film on the substrate, with the power semiconductor component arranged on it, in such a way that the power semiconductor component is covered on all sides of its edge region by the covering region of the insulating film, wherein a further section of the insulating film covers parts of one of the conductor tracks. Finally, the connecting device is arranged.

公开(公告)号：US20150357303A1

公开(公告)日：2015-12-10

申请号：US14735300

申请日：2015-06-10

申请人： Continental Automotive GmbH

发明人： Nico Kohl ,  Martin Metzler ,  Sven Egelkraut ,  Markus Leicht

IPC分类号： H01L23/00 ,  H01L23/498

CPC分类号： H01L23/49544 ,  H01L23/3735 ,  H01L23/495 ,  H01L23/49548 ,  H01L23/49838 ,  H01L23/49844 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/3756 ,  H01L2224/37639 ,  H01L2224/4001 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40106 ,  H01L2224/40221 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/73263 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/84201 ,  H01L2224/84203 ,  H01L2224/84205 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/92142 ,  H01L2224/92246 ,  H01L2924/00015 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/00012

摘要： A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.

摘要翻译： 功率半导体电路包括至少一个具有至少一个接触区域的半导体，以及至少一个接合导体条，其具有紧固在至少一个接触区域上的至少一个接触区域。 接合导体条的接触区域包括切口。

公开(公告)号：US20240312968A1

公开(公告)日：2024-09-19

申请号：US18588573

申请日：2024-02-27

申请人： Renesas Electronics Corporation

发明人： Toshiyuki HATA ,  Zen TOMIZAWA

IPC分类号： H01L25/16 ,  H01L23/00 ,  H01L23/34 ,  H01L23/495

CPC分类号： H01L25/16 ,  H01L23/34 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/40221 ,  H01L2224/83192 ,  H01L2924/13091

摘要： A semiconductor device including: a first semiconductor chip having a first power transistor and a temperature sensing diode; and a second semiconductor chip having a second power transistor, but not having a temperature sensing diode.

公开(公告)号：US20240105665A1

公开(公告)日：2024-03-28

申请号：US18116680

申请日：2023-03-02

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Katsuyuki IMAI ,  Daisuke ANDO ,  Toyokazu SHIBATA ,  Keiko KAJI

IPC分类号： H01L23/00

CPC分类号： H01L24/37 ,  H01L24/40 ,  H01L2224/4007 ,  H01L2224/40221

摘要： According to one embodiment, a semiconductor device includes: a first frame, a second frame spaced apart from the first frame in a first direction, and a first joint terminal provided above a second chip provided on the second frame. The first frame includes a first terminal portion extending toward the second frame. The first joint terminal includes a second terminal portion extending toward the first frame. The second terminal portion includes a plane portion, a first projecting portion and a second projecting portion each branching out from the plane portion. An end portion of the first projecting portion and an end portion of the second projecting portion are respectively joined on the first terminal portion. The first projecting portion is different in a length in a first direction from the second projecting portion.