公开(公告)号：US20040216763A1

公开(公告)日：2004-11-04

申请号：US10859668

申请日：2004-06-03

Applicant: Semitool, Inc.

Inventor： Thomas Maximilian Gebhart ,  Eric J. Bergman

IPC: B08B007/00 ,  B08B003/00

CPC classification number: H05K3/3426 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/02054 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  Y02P70/613 ,  Y10S438/906 ,  H01L2924/00

Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40null C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

Abstract translation: 一种在处理室中清洗具有金属层的半导体工件的方法包括以下步骤：将包含溶解的二氧化碳的液体溶液引入到工件上，并将臭氧引入到处理室中。 臭氧氧化工件上的污染物，而二氧化碳则抑制金属层的腐蚀。 液体溶液优选加热至大于40℃的温度，并且优选包含注入二氧化碳气体的去离子水。 在清洁过程中，工件优选地在处理室内旋转。 在将液体溶液引入工件之前，臭氧可能被夹带在液体溶液中，或者臭氧可以分开地引入到处理室中。