公开(公告)号：US20030205240A1

公开(公告)日：2003-11-06

申请号：US10418695

申请日：2003-04-18

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: C23G001/02

CPC classification number: H01L21/02054 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  Y10S134/902 ,  H01L2924/00

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract translation: 在用于处理工件以从工件的第一表面去除材料的方法中，在条件下将蒸汽引入到第一表面上，使得至少一些蒸汽在第一表面上冷凝并形成液体边界层。 冷凝蒸汽有助于在升高的温度下保持工件的第一表面。 在臭氧通过边界层扩散并与第一表面上的材料反应的条件下，在工件周围设置臭氧。 控制第一表面的温度以保持蒸汽的冷凝。

公开(公告)号：US20030136429A1

公开(公告)日：2003-07-24

申请号：US10055467

申请日：2002-01-22

Applicant: Semitool, Inc.

Inventor： Dana Scranton ,  Eric J. Bergman

IPC: B08B003/10

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B3/102 ,  B08B7/00 ,  B08B2203/005 ,  F26B21/14 ,  H01L21/67028

Abstract: A processor for cleaning, rinsing, and drying workpieces includes a process vessel, an ozone injection system for introducing ozone gas into the process vessel, a liquid injection system for introducing a processing fluid into the process vessel, and a drying system for delivering a drying fluid to the process vessel. The processing fluid is introduced into the process vessel such that the processing fluid lies beneath a workpiece. Ozone gas is introduced into the process vessel. The workpiece is then bathed in the processing fluid. A drying fluid is introduced into the process vessel while the processing fluid is evacuated from the process vessel. Microelectronic workpieces can be cleaned and dried in a single vessel, reducing the equipment and space used in manufacturing.

Abstract translation: 用于清洁，冲洗和干燥工件的处理器包括处理容器，用于将臭氧气体引入处理容器的臭氧注入系统，用于将处理流体引入处理容器的液体注入系统，以及用于输送干燥的干燥系统 流体到处理容器。 将处理流体引入处理容器中，使得处理流体位于工件下方。 将臭氧气体引入加工容器中。 然后将工件浸在处理液中。 将干燥流体引入处理容器中，同时处理流体从处理容器排出。 微电子工件可以在单个容器中进行清洁和干燥，减少制造中使用的设备和空间。

公开(公告)号：US20030062069A1

公开(公告)日：2003-04-03

申请号：US10224625

申请日：2002-08-20

Applicant: Semitool, Inc

Inventor： Ronald G. Breese ,  C. James Bryer ,  Eric J. Bergman ,  Dana R. Scranton

IPC: B08B007/00

CPC classification number: H01L21/67051 ,  B08B9/0861 ,  B08B9/32 ,  Y10S134/902

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

Abstract translation: 在清洁金属离子污染物（特别是铜）的清洁方法中，容器被装载到清洁装置中。 用稀释的螯合剂溶液喷洒容器。 螯合剂溶液从容器中除去金属污染物。 然后用漂洗液如去离子水和表面活性剂漂洗容器。 然后将容器干燥，优选通过施加热和/或热空气运动。

公开(公告)号：US20030051743A1

公开(公告)日：2003-03-20

申请号：US10200071

申请日：2002-07-19

Applicant: Semitool, Inc.

Inventor： Ronald G. Breese ,  C. James Bryer ,  Eric J. Bergman ,  Dana R. Scranton

IPC: B08B007/00

CPC classification number: H01L21/67051 ,  B08B3/12 ,  B08B9/0861 ,  B08B9/32

Abstract: In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a loader of a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution, while the rotor is spinning. The chelating agent solution removes metallic contamination from the containers. The containers are then sprayed with a rinsing liquid, such as deionized water and a surfactant while the rotor is spinning and heat is applied. The containers are then dried by applying heat, hot air movement and spinning the rotor.

Abstract translation: 在清洁金属离子污染物尤其是铜的清洁方法中，将容器装载到清洁装置的装载机中。 当转子旋转时，用稀释的螯合剂溶液喷洒容器。 螯合剂溶液从容器中除去金属污染物。 然后在转子旋转并施加热量的同时，用诸如去离子水和表面活性剂的冲洗液体喷洒容器。 然后通过加热，热空气运动并旋转转子干燥容器。

公开(公告)号：US20030205254A1

公开(公告)日：2003-11-06

申请号：US10420659

申请日：2003-04-21

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman ,  Mignon P. Hess

IPC: B08B003/00

CPC classification number: H01L21/02054 ,  B08B3/02 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/6704 ,  Y10S134/902

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract translation: 提供了一种用于提供处理液和臭氧的混合物用于处理工件表面的设备以及相应的方法。 该装置的优选实施例包括液体供应管线，其用于在容纳处理液体的容器和容纳工件的处理室之间提供流体连通。 设置加热器以直接或间接地加热工件。 优选地，通过加热供给到工件的处理液来加热工件。 一个或多个喷嘴接受来自液体供应管线的处理液并将其喷射到工件的表面上，同时臭氧发生器将臭氧加入到包含工件的环境中。

公开(公告)号：US20030188447A1

公开(公告)日：2003-10-09

申请号：US10397946

申请日：2003-03-25

Applicant: Semitool, Inc.

Inventor： Gordon R. Nelson ,  Jeffry A. Davis ,  Raymon F. Thompson ,  Eric J. Bergman

IPC: F26B017/24

CPC classification number: H01L21/67754 ,  H01L21/67769 ,  H01L21/67772 ,  H01L21/67775 ,  H01L21/67778 ,  H01L21/67781 ,  H01L21/68707 ,  Y10S269/903

Abstract: A semiconductor wafer processing system has a carrier including wafer slots. A process robot engages the carrier and installs the carrier into a rotor within a process chamber. The rotor has a tapered or stepped inside surface matching a tapered or stepped outside surface of the carrier. Wafer retainers on the carrier pivot to better secure wafers within the carrier.

公开(公告)号：US20020095816A1

公开(公告)日：2002-07-25

申请号：US10101045

申请日：2002-03-18

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman ,  Ian Sharp ,  Craig P. Meuchel ,  H. Frederick Woods

IPC: F26B021/06 ,  F26B005/04 ,  F26B003/00

CPC classification number: H01L21/67034 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/67772 ,  H01L21/67775

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract translation: 用于半导体晶片的高压干燥的系统包括将晶片插入开放容器中，将晶片浸入液体中，对容器进行加压密封，用惰性气体加压容器，然后控制 使用从保持在气 - 液界面正下方的深度提取水的可移动排水来排出液体。 此后，可以在容器中降低压力，并且可以除去干燥和干净的晶片。 高压抑制液体的沸点，从而允许使用较高的温度来优化反应性。 超声波与加压流体一起使用，以提高清洁性能。 超临界物质设置在含有晶片的密封容器中以促进清洗和其它处理。

公开(公告)号：US20010017146A1

公开(公告)日：2001-08-30

申请号：US09741615

申请日：2000-12-19

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: B08B003/04

CPC classification number: H01L21/67034 ,  Y10S134/902

Abstract: A process and apparatus for drying semiconductor wafers, includes the controlled-rate extraction of a wafer immersed in rinsing liquid, irradiation of the wafer using high intensity lights or filaments along the wafer-liquid interface, and delivery of gas streams against the wafer along the wafer-liquid interface using a gas delivery system. Heating is controlled to create a temperature gradient without evaporating rinsing fluid adhering to surfaces of the wafer. Heating by the radiation sources creates a temperature gradient in the wafer in the irradiated region that simultaneously generates a surface tension gradient in the water adhering to the wafer. The gas delivery system removes the bulk of the water adhering to the wafer surface, and also suppresses the height of the rinsing liquid adhering to the wafer, providing faster extraction of dry and highly clean wafers from the rinsing liquid. A solvent vapor is optionally injected at the wafer-liquid interface, to reduce adhesion of the liquid to the vapor.

Abstract translation: 用于干燥半导体晶片的工艺和设备包括浸入冲洗液中的晶片的受控速率提取，沿着晶片 - 液界面使用高强度光或细丝照射晶片，以及沿着晶片 - 液体界面向晶片输送气流 使用气体输送系统的晶片 - 液体界面。 控制加热以产生温度梯度，而不会蒸发粘附到晶片表面的冲洗流体。 通过辐射源的加热在照射区域中的晶片中产生温度梯度，同时在附着于晶片的水中产生表面张力梯度。 气体输送系统除去附着在晶片表面上的大部分水，并且还抑制了附着在晶片上的冲洗液体的高度，从冲洗液体中更快地提取干燥且高度干净的晶片。 任选地在晶片 - 液体界面处注入溶剂蒸气，以减少液体对蒸气的粘附。

公开(公告)号：US20040259370A1

公开(公告)日：2004-12-23

申请号：US10464597

申请日：2003-06-18

Applicant: Semitool, Inc.

Inventor： Eric J. Bergman

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/0092 ,  B81C1/00928 ,  B81C2201/117 ,  H01L21/6708

Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

Abstract translation: 衬底上的MEMS器件的蚀刻释放包括用蚀刻剂蒸气和润湿蒸气蚀刻衬底。 在蚀刻释放之后，MEMS器件的热烘烤可用于挥发残留物。 也可以使用超临界流体来除去残留的污染物。 蚀刻剂蒸气（例如HF）和润湿蒸气（例如醇蒸汽）的组合改善了基板上蚀刻底切的均匀性。

公开(公告)号：US20040216763A1

公开(公告)日：2004-11-04

申请号：US10859668

申请日：2004-06-03

Applicant: Semitool, Inc.

Inventor： Thomas Maximilian Gebhart ,  Eric J. Bergman

IPC: B08B007/00 ,  B08B003/00

CPC classification number: H05K3/3426 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/02054 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L23/49582 ,  H01L2924/0002 ,  Y02P70/613 ,  Y10S438/906 ,  H01L2924/00

Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40null C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

Abstract translation: 一种在处理室中清洗具有金属层的半导体工件的方法包括以下步骤：将包含溶解的二氧化碳的液体溶液引入到工件上，并将臭氧引入到处理室中。 臭氧氧化工件上的污染物，而二氧化碳则抑制金属层的腐蚀。 液体溶液优选加热至大于40℃的温度，并且优选包含注入二氧化碳气体的去离子水。 在清洁过程中，工件优选地在处理室内旋转。 在将液体溶液引入工件之前，臭氧可能被夹带在液体溶液中，或者臭氧可以分开地引入到处理室中。