公开(公告)号：US06693043B1

公开(公告)日：2004-02-17

申请号：US10251178

申请日：2002-09-20

申请人： Senzi Li ,  Helmuth Treichel ,  Kirk Ostrowski ,  Chevan Goonetilleke ,  Jim Su ,  David L. Chen

发明人： Senzi Li ,  Helmuth Treichel ,  Kirk Ostrowski ,  Chevan Goonetilleke ,  Jim Su ,  David L. Chen

IPC分类号： H01L21302

CPC分类号： H01J37/32357 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138 ,  H01L21/76802

摘要： A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.

摘要翻译： 描述了使用下游等离子体系统的独特的光刻胶条序列。 该序列可以包括单独的RF定向等离子体，单独的下游等离子体或将RF等离子体和下游等离子体组合在一起。 工艺顺序可以是单步或多步，其在保持膜的介电性能的同时产生高剥离速率。 该过程可以是在低温和低压下进行的氧化过程，这降低了氧与低k膜的反应性。 此外，通过将少量的添加气体如含氟气体加入到等离子体中，去除来自带材加工的无机残留物，留下清洁的光致抗蚀剂和残留物的薄膜。

公开(公告)号：US07390755B1

公开(公告)日：2008-06-24

申请号：US10137096

申请日：2002-05-01

申请人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

发明人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

摘要翻译： 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US08058181B1

公开(公告)日：2011-11-15

申请号：US12502130

申请日：2009-07-13

申请人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

发明人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF, generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

摘要翻译： 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF，产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US07569492B1

公开(公告)日：2009-08-04

申请号：US12111095

申请日：2008-04-28

申请人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

发明人： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

摘要： The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

摘要翻译： 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US20170194721A1

公开(公告)日：2017-07-06

申请号：US15401027

申请日：2017-01-07

申请人： Chih-Peng Fan ,  Ching-Ho Hsieh ,  Min-Hsing Wu ,  David L. Chen ,  Woody James Maynard

发明人： Chih-Peng Fan ,  Ching-Ho Hsieh ,  Min-Hsing Wu ,  David L. Chen ,  Woody James Maynard

IPC分类号： H01R4/04 ,  H05K3/32 ,  H01R13/24 ,  H01R12/52 ,  H01R12/57

CPC分类号： H01R4/04 ,  H01R12/52 ,  H01R12/57 ,  H01R12/73 ,  H01R12/79 ,  H01R13/2442 ,  H05K1/147 ,  H05K1/189 ,  H05K3/326 ,  H05K2201/0311

摘要： A novel electrical connector and method of manufacture is disclosed which provides an integral attachment and retention means for the purpose of electrically and mechanically interconnecting circuit elements in electronic devices, said circuit elements including but not limited to printed circuit boards, flexible printed circuits, rigid flex circuits, semiconductor package substrates, modules, and batteries. The electrical connector of the present invention utilizes a bonding material, disposed at least between the electrical spring contact elements on a surface of the connector, to bond and retain first and second portions of the electrical connector in an actuated state on a mating circuit element whereby stable and low resistance electrical interconnections are formed and maintained between the electrical connector and interconnection terminals on the mating circuit element. This design permits the electrical connector to be low-profile and use a reduced amount of space on a circuit member such as a PCB.

公开(公告)号：US20160380372A1

公开(公告)日：2016-12-29

申请号：US15192015

申请日：2016-06-24

申请人： Ching-Ho Hsieh ,  Bohdan P. Wozniak ,  David L. Chen ,  Chih-Peng Fan ,  Ming-Hsing Wu

发明人： Ching-Ho Hsieh ,  Bohdan P. Wozniak ,  David L. Chen ,  Chih-Peng Fan ,  Ming-Hsing Wu

IPC分类号： H01R12/75 ,  H01R24/60 ,  H01R13/26 ,  H01R13/11 ,  H01R43/20

CPC分类号： H01R13/2442 ,  H01R12/52 ,  H01R13/03 ,  H01R24/60 ,  H01R43/16

摘要： A novel interconnection structure and method of manufacture is provided which provides an improved means of interconnecting external connector interfaces, such as Universal Serial Bus (USB) connectors, to the internal system boards of electronic devices, such as laptop computers, tablets, and mobile phones. An external connector interface used for interconnecting separate electronic devices is connected to the internal system board of the device in which it resides by being interconnected mechanically and electrically, or alternatively being integral to and of a unitary structure with, a printed circuit substrate, said printed circuit substrate having a plurality of conductive, elastic spring contacts mounted on one surface, with at least one of said electrical spring contacts electrically interconnected to the external electrical connections of the USB connector, and said electrical spring contacts providing an electrical interconnection means to a system board inside the electronic device.This structure improves upon the state of the art by reducing the number and complexity of interconnection interfaces, reducing signal degradation, allowing higher data transfer rates, and improving reliability of the interconnections.The interconnection of the USB substrate to the system board may be separable, re-mountable, and re-connectable, and may be accomplished with a normal-force actuated connector.

摘要翻译： USB基板与系统板的互连可以是可分离的，可重新安装的和可重新连接的，并且可以用法向力致动连接器来实​​现。

公开(公告)号：US20160344118A1

公开(公告)日：2016-11-24

申请号：US15158085

申请日：2016-05-18

申请人： Ching-Ho (NMI) Hsieh ,  Ming-Hsing (NMI) Wu ,  Chung-Chi (NMI) Huang ,  Chih-Peng (NMI) Fan ,  David L. Chen

发明人： Ching-Ho (NMI) Hsieh ,  Ming-Hsing (NMI) Wu ,  Chung-Chi (NMI) Huang ,  Chih-Peng (NMI) Fan ,  David L. Chen

IPC分类号： H01R12/52 ,  H01R43/24 ,  H01R43/02 ,  H01R43/16 ,  H01R12/79 ,  H01R13/24 ,  H01R12/71 ,  H01R43/00

CPC分类号： H01R43/16 ,  H01R12/714 ,  H01R12/73 ,  H01R43/20

摘要： A novel, low profile connector element is disclosed for the purpose of electrically and mechanically interconnecting circuit elements in electronic devices, said circuit elements including but not limited to printed circuit boards, flexible printed circuits, rigid flex circuits, semiconductors, semiconductor package substrates, ground shields, and batteries, whereby the connector includes electrical contacts which have a unitary structure consisting of at least a distal end, a proximal end, and a middle section between the distal and proximal ends. The contacts of the present invention exhibit a contact diametric true position with respect to one another in an array of less than 0.2 millimeters. The electrical contacts are created in batch form from a high conductivity sheet of spring material such as a copper alloy. At least one end of the contact is elastic and emanates from one surface of the connector housing to enable formation of a separable, low resistance and reliable electrical connection to a terminal on a mating circuit element. A second end of the contact may also be elastic, or may be designed to permanently mount on a terminal on a second mating circuit element using attachment means such as solder. Contacts can be made by batch stamping and forming in reel to reel processing, and may remain integral to the contact strip or sheet during all connector fabrication processes including contact stamping, contact forming, contact plating, integration into the connector housing such as by over-molding, and through all other processing until singulation of the individual contacts and the whole of the connector′ from the contact sheet, and, as needed to provide proper connector function, from one another.

摘要翻译： 公开了一种新颖的低剖面连接器元件，用于电气和机械地互连电子设备中的电路元件，所述电路元件包括但不限于印刷电路板，柔性印刷电路，刚性柔性电路，半导体，半导体封装衬底，接地 屏蔽件和电池，由此连接器包括具有由远端和近端之间的至少远端，近端和中间部分组成的整体结构的电触点。 本发明的触点以小于0.2毫米的阵列相对于彼此表现出接触直径的真实位置。 电触点由诸如铜合金的弹性材料的高导电性片材以批量形式产生。 接触件的至少一端是弹性的并且从连接器壳体的一个表面发出，以形成与配合电路元件上的端子的可分离，低电阻和可靠的电连接。 接触的第二端也可以是弹性的，或者可以被设计成使用诸如焊料的附接装置永久地安装在第二配合电路元件上的端子上。 接头可以通过在卷轴到卷轴处理中的批量冲压和成型制成，并且在所有连接器制造过程中可以保持与接触片或片的整体，包括接触冲压，接触形成，接触电镀，集成到连接器壳体中， 并且通过所有其它处理，直到单独的接触件和整个连接器从接触片单独化，并且根据需要彼此提供适当的连接器功能。

公开(公告)号：US20120109623A1

公开(公告)日：2012-05-03

申请号：US12916951

申请日：2010-11-01

申请人： William B. Dolan ,  David L. Chen

发明人： William B. Dolan ,  David L. Chen

IPC分类号： G06F17/28

CPC分类号： G06F17/2827

摘要： The subject disclosure generally describes a technology by which text and/or speech descriptions are collected by showing a stimulus such as video clips to contributors (e.g., of a crowd-sourcing service). The descriptions, which are in the language of each contributor's choice, are of the same stimulus and thus associated with one another. While each contributor may be monolingual, the technique allows for the collection of approximately bilingual data, since more than one language may be represented among the different contributors. The descriptions may be used as translation data for training a machine translation engine, and as paraphrase data (grouped by the same language) for training a machine paraphrasing system. Also described is evaluating the quality of a machine paraphrasing system via a distinctiveness metric.

摘要翻译： 主题公开一般地描述了通过向贡献者（例如，群众来源服务）显示诸如视频剪辑的刺激来收集文本和/或语音描述的技术。 每个贡献者选择的语言的描述是相同的刺激，因此彼此相关联。 虽然每个贡献者可以是单语的，但是该技术允许收集大致双语数据，因为可以在不同的贡献者中表示多于一种的语言。 这些描述可以用作训练机器翻译引擎的翻译数据，以及用于训练机器翻译系统的转义数据（以相同的语言分组）。 还描述了通过独特性度量来评估机器释义系统的质量。