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    COMPOSITE IMPLANT HAVING POROUS STRUCTURE FILLED WITH BIODEGRADABLE ALLOY AND METHOD OF MAGNESIUM-BASED MANUFACTURING THE SAME
    3.
    发明申请
    COMPOSITE IMPLANT HAVING POROUS STRUCTURE FILLED WITH BIODEGRADABLE ALLOY AND METHOD OF MAGNESIUM-BASED MANUFACTURING THE SAME 审中-公开
    具有可生物降解合金填充的多孔结构的复合植入物及其基于镁的制造方法

    公开(公告)号：US20110054629A1

    公开(公告)日：2011-03-03

    申请号：US12933462

    申请日：2009-03-18

    申请人： Hyun-Kwang Seok ,  Seok-Jo Yang ,  Yu-Chan Kim ,  Ja-Kyo Koo

    发明人： Hyun-Kwang Seok ,  Seok-Jo Yang ,  Yu-Chan Kim ,  Ja-Kyo Koo

    IPC分类号： A61F2/28 ,  B05D7/00 ,  B05D3/02

    CPC分类号： A61L27/58 ,  A61L27/427 ,  A61L27/446

    摘要： The present invention provides a composite implant comprising pores of a porous structure filled with a biodegradable magnesium-based alloy. Further, the present invention provides a composite implant which filles pores of the porous structure prepared by a metal, a ceramic or a polymer with a biodegradable magnesium-based alloy. Mechanical properties of the composite implant of the present invention are improved because a magnesium-based alloy filled in its pores increases the strength of a porous structure comprised of a metal, a ceramic or a polymer. Further, it can be expected that the magnesium-based alloy filled in the porous structure is decomposed in a living body, thus increasing bone formation rate. Accordingly bone tissue can be rapidly formed because the composite implant of the present invention has high strength and excellent interfacial force between the composite implant and bone tissue, compared to conventional porous materials.

    摘要翻译： 本发明提供了一种复合植入物，其包含填充有可生物降解的镁基合金的多孔结构的孔。 此外，本发明提供一种复合植入物，其填充由具有可生物降解的镁基合金的金属，陶瓷或聚合物制备的多孔结构的孔。 本发明的复合植入物的机械性能得到改善，因为填充在其孔中的镁基合金增加了由金属，陶瓷或聚合物构成的多孔结构的强度。 此外，可以预期填充在多孔结构中的镁基合金在生物体中分解，从而增加骨形成速率。 因此，与常规多孔材料相比，本发明的复合植入物具有高复合植入物和骨组织之间的高强度和优异的界面力，因此能够快速形成骨组织。

    Method and apparatus for plasma ion implantation of solid element
    5.
    发明授权
    Method and apparatus for plasma ion implantation of solid element 有权
    固体元素等离子体离子注入的方法和装置

    公开(公告)号：US09139902B2

    公开(公告)日：2015-09-22

    申请号：US13044621

    申请日：2011-03-10

    申请人： Seung-Hee Han ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    发明人： Seung-Hee Han ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  C23C14/48 ,  C23C14/16

    CPC分类号： C23C14/35 ,  C23C14/16 ,  C23C14/48 ,  H01J37/32532 ,  H01J37/3438 ,  H01J37/3467

    摘要： Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.

    摘要翻译： 公开了固体元素的等离子体离子注入的装置和方法，其能够实现固体元素的等离子体离子注入。 根据该装置和方法，将样品放置在真空室中的样品台上，并将真空室的内部保持为真空状态。 并且，在真空室中供应气体，将第一脉冲DC功率施加到磁控溅射源，以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力，能够在维持低平均功率的同时施加脉冲施加高功率。 并且，与施加第一脉冲功率同时，可以将第二功率提供给样品台，该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲，并与用于磁控溅射的脉冲直流电力同步 资源。 并且，可以通过天线在真空室中产生电感耦合等离子体，以增加固体元素的电离速率和降低磁控管溅射源的操作压力。

    METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT
    6.
    发明申请
    METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT 有权
    固体元素等离子体植入的方法与装置

    公开(公告)号：US20120228123A1

    公开(公告)日：2012-09-13

    申请号：US13044621

    申请日：2011-03-10

    申请人： Seung-Hee HAN ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    发明人： Seung-Hee HAN ,  Ji-Young Byun ,  Hyun-Kwang Seok ,  Jun-Hyun Han ,  Yu-Chan Kim ,  Sung-Bai Lee ,  Jin-Young Choi

    IPC分类号： C23C14/48 ,  C23C14/35

    CPC分类号： C23C14/35 ,  C23C14/16 ,  C23C14/48 ,  H01J37/32532 ,  H01J37/3438 ,  H01J37/3467

    摘要： Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element.According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.

    摘要翻译： 公开了固体元素的等离子体离子注入的装置和方法，其能够实现固体元素的等离子体离子注入。 根据该装置和方法，将样品放置在真空室中的样品台上，并将真空室的内部保持为真空状态。 并且，在真空室中供应气体，将第一脉冲DC功率施加到磁控溅射源，以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力，能够在维持低平均功率的同时施加脉冲施加高功率。 并且，与施加第一脉冲功率同时，可以将第二功率提供给样品台，该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲，并与用于磁控溅射的脉冲直流电力同步 资源。 并且，可以通过天线在真空室中产生电感耦合等离子体，以增加固体元素的电离速率和降低磁控管溅射源的操作压力。