公开(公告)号：US20090283411A1

公开(公告)日：2009-11-19

申请号：US12121687

申请日：2008-05-15

申请人： Serdar Aksu ,  Yongbong Han ,  Bulent M. Basol

发明人： Serdar Aksu ,  Yongbong Han ,  Bulent M. Basol

IPC分类号： C25D15/00

CPC分类号： C25D3/54 ,  C25D9/08

摘要： An electroplating solution to electroplate a selenium containing film on a conductive surface is provided. The electroplating solution includes a solvent, a selenium source material that dissolves in the solvent; an anti-coagulation agent that inhibits Se particle growth and promotes Se particle dispersal. The pH value of the electroplating solution is in the range of 2-10.

摘要翻译： 提供了一种在导电表面上电镀含硒膜的电镀溶液。 电镀溶液包括溶剂，溶解在溶剂中的硒源材料; 一种抑制Se颗粒生长并促进Se颗粒分散的抗凝剂。 电镀液的pH值在2-10的范围内。

公开(公告)号：US20080135415A1

公开(公告)日：2008-06-12

申请号：US11952905

申请日：2007-12-07

申请人： Yongbong Han ,  Serdar Aksu ,  Bulent M. Basol

发明人： Yongbong Han ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D5/10

CPC分类号： C25D5/50 ,  C25D5/10 ,  C25D7/0621 ,  C25D21/12 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/20 ,  H01L31/208 ,  Y02E10/541 ,  Y02P70/521

摘要： A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

摘要翻译： 形成厚度大于500纳米的硒（Se）层的VIA层的多层工艺。 该方法包括在工件上电镀具有非晶微结构并且表现出高电阻率的Se材料层，随后对Se层进行退火。 退火工艺将Se层的非晶结构转变为导电的晶体结构。 在退火之后，可以将另一个Se层电镀到退火的Se层上。 可以重复电镀和退火步骤，直到达到所需的Se层厚度。

公开(公告)号：US08066863B2

公开(公告)日：2011-11-29

申请号：US11952905

申请日：2007-12-07

申请人： Yongbong Han ,  Serdar Aksu ,  Bulent M. Basol

发明人： Yongbong Han ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D5/10 ,  C25D5/50

CPC分类号： C25D5/50 ,  C25D5/10 ,  C25D7/0621 ,  C25D21/12 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/20 ,  H01L31/208 ,  Y02E10/541 ,  Y02P70/521

摘要： A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

摘要翻译： 形成厚度大于500纳米的硒（Se）层的VIA层的多层工艺。 该方法包括在工件上电镀具有非晶微结构并且表现出高电阻率的Se材料层，随后对Se层进行退火。 退火工艺将Se层的非晶结构转变为导电的晶体结构。 在退火之后，可以将另一个Se层电镀到退火的Se层上。 可以重复电镀和退火步骤，直到达到所需的Se层厚度。

公开(公告)号：US20120199490A1

公开(公告)日：2012-08-09

申请号：US13306863

申请日：2011-11-29

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/56

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US20090315148A1

公开(公告)日：2009-12-24

申请号：US12143609

申请日：2008-06-20

申请人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

发明人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

IPC分类号： H01L21/20 ,  H01L29/26

CPC分类号： H01L31/0322 ,  C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D7/126 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

摘要翻译： 提供了一种电化学沉积方法，以形成具有可重复性的均匀且连续的IIIA族材料丰富的薄膜。 这种薄膜用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，IIIA族富含物质的薄膜沉积在包含20-90摩尔％的In和Ga中的至少一种和至少10摩尔％的包含Cu，Se，Te， Ag和S.中间层的厚度适于小于或等于IIIA族富含薄膜的厚度的约20％。

公开(公告)号：US20090283414A1

公开(公告)日：2009-11-19

申请号：US12123372

申请日：2008-05-19

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D11/32

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US20080169025A1

公开(公告)日：2008-07-17

申请号：US11852980

申请日：2007-09-10

申请人： Bulent M. Basol ,  Serdar Aksu ,  Yuriy Matus

发明人： Bulent M. Basol ,  Serdar Aksu ,  Yuriy Matus

IPC分类号： H01L31/0272 ,  H01L31/04

CPC分类号： H01L31/0322 ,  H01L31/0323 ,  H01L31/0749 ,  Y02E10/541

摘要： A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a a metallic precursor layer with a dopant structure. The metallic precursor layer including Group IB and Group IIIA materials such as Cu, Ga and In are deposited on a base. The dopant structure is formed on the metallic precursor layer, wherein the dopant structure includes a stack of one or more Group VIA material layers such as Se layers and one or more a dopant material layers such as Na.

摘要翻译： 通过使金属前体层与掺杂剂结构反应形成用于太阳能电池的掺杂的IBIIIAVIA族吸收层的方法。 包括IB族和IIIA族材料的金属前体层如Cu，Ga和In沉积在基底上。 掺杂剂结构形成在金属前体层上，其中掺杂剂结构包括一个或多个VIA层的诸如Se层和一个或多个诸如Na的掺杂剂材料层的叠层。

公开(公告)号：US08066865B2

公开(公告)日：2011-11-29

申请号：US12123372

申请日：2008-05-19

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/56

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US07951280B2

公开(公告)日：2011-05-31

申请号：US12267488

申请日：2008-11-07

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/00 ,  C25D5/10 ,  C23C28/02 ,  C23C28/00 ,  C23C16/40

CPC分类号： C25D3/54 ,  C25D5/10

摘要： An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

摘要翻译： 提供了一种电化学沉积方法和电解质，以均匀，无缺陷和平滑的镓膜。 在优选的实施方案中，电解质可以包括包含水和至少一种单羟基醇，镓盐和酸的溶剂，以控制溶液的pH和电导率。 该方法在导电表面上电沉积具有亚微米厚度的镓膜。 这种镓层用于制造半导体和电子器件如薄膜太阳能电池。

公开(公告)号：US07736913B2

公开(公告)日：2010-06-15

申请号：US11696643

申请日：2007-04-04

申请人： Bulent M. Basol ,  Serdar Aksu

发明人： Bulent M. Basol ,  Serdar Aksu

IPC分类号： H01L21/66

CPC分类号： C25D5/10 ,  C25D5/48 ,  C25D21/12 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

摘要翻译： 本发明涉及为辐射检测器和光伏应用的薄化合物半导体膜提供组合物控制的方法和装置。 在本发明的一个方面，提供了一种方法，其中检测多层中的元素的摩尔比，使得可以发生多元素层的调谐以获得具有预定摩尔数的多元素层 比例范围。 在本发明的另一方面，提供了一种方法，其中检测和调谐Cu，In和/或Ga之外的子层和其上的层的厚度，以便提供与预处理基本相同的调谐厚度， 确定厚度。