公开(公告)号：US20120052690A1

公开(公告)日：2012-03-01

申请号：US13080561

申请日：2011-04-05

申请人： Sergey G. BELOSTOTSKIY ,  Michael G. CHAFIN ,  Jingbao LIU ,  David PALAGASHVILI

发明人： Sergey G. BELOSTOTSKIY ,  Michael G. CHAFIN ,  Jingbao LIU ,  David PALAGASHVILI

IPC分类号： H01L21/3065 ,  C23F1/00 ,  C23F1/08

CPC分类号： H01J37/20 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67109 ,  H01L21/6831

摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.

摘要翻译： 本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。 在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。 在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，​​以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。

公开(公告)号：US20130105303A1

公开(公告)日：2013-05-02

申请号：US13651074

申请日：2012-10-12

申请人： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

发明人： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

摘要： Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

摘要翻译： 描述了用于蚀刻低k和其他电介质膜的方法和处理室。 例如，一种方法包括用等离子体处理来修改低k电介质层的部分。 选择性地在低k电介质层的掩模层和低k电介质层的未修改部分上蚀刻低k电介质层的改性部分。 描述了具有用于交替产生不同等离子体的多个室区的蚀刻室。 在实施例中，提供第一电荷耦合等离子体源以在一个操作模式中产生到工件的离子通量，而提供次级等离子体源以在另一个操作模式中提供反应物质通量，而不会对工件产生显着的离子通量。 控制器操作以随着时间重复地循环操作模式以去除期望的累积量的电介质材料。

公开(公告)号：US20140262031A1

公开(公告)日：2014-09-18

申请号：US13893199

申请日：2013-05-13

申请人： Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

发明人： Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/32091

摘要： A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.

摘要翻译： 多室处理平台包括一个或多个多模式等离子体处理系统。 在实施例中，多模式等离子体处理系统包括多模式源组件，该多模式源组件具有用于驱动处理室内的喷头电极上的RF信号的主要源，以及辅助源以通过在其上驱动RF信号来产生等离子体 电极在处理室的下游。 在实施例中，主7源使用第一频率的RF能量，而次级源利用第二频率的RF能量。 淋浴头电极通过频率相关的滤波器耦合到地面，该滤波器在初级源的操作期间充分地辨别喷头电极的第一和第二频率以进行RF供电，而在没有电接触切换的二级等离子体源的操作期间充分地接地 或依赖物理移动部件。