摘要:
Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
摘要:
Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
摘要翻译:公开了具有改进性能的发光装置和显示器。 发光装置包括设置在第一电极和第二电极之间的发光材料。 各种实施方案包括具有至少约2.2%的峰值外部量子效率的器件; 发射具有x大于0.63的CIE色坐标的光的装置; 当以5mA / cm 2的电流密度测量时,具有至少约2.2%的外部量子效率的器件。 还公开了包括能够在激发时发射红光的多个半导体纳米晶体的发光器件,其中该器件具有至少约1.5流明/瓦特的峰值发光效率。 还公开了一种发光器件,其包括能够在激发时发射红光的多个半导体纳米晶体,其中当以5毫安/平方厘米的电流密度测量时,该器件具有至少约1.5流明/瓦特的发光效率。 还公开了一种发光器件,其包括在激发时能够发射绿光的多个半导体纳米晶体,其中该器件具有至少约1.1%的峰值外部量子效率。 还公开了包括多个半导体纳米晶体的发光器件,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约3流明/瓦的发光效率。 进一步公开的是一种发光器件,其包括能够在激发时发出绿光的多个半导体纳米晶体,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约2%的外部量子效率。 公开了其他具有改进性能的发光装置和显示器。 还公开了制备和纯化半导体纳米晶体的方法。
摘要:
Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380 nm to about 500 nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450 nm to about 490 nm. Displays including light emitting devices are also disclosed.
摘要:
A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.
摘要:
A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.
摘要:
A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.
摘要:
A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%.
摘要:
A semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. The present invention further relates to compositions and devices including semiconductor nanocrystals capable of emitting light with an improved photoluminescence quantum efficiency. A semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm is disclosed. Also disclosed are a device, a population of semiconductor nanocrystals, and a composition including a semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm. A semiconductor nanocrystal that is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 90%. Also disclosed are a device, a population, and a composition including a semiconductor nanocrystal.
摘要:
Water tolerant Lewis acids are used in a process for the preparation of alkylene glycols by catalytic hydration of the corresponding alkylene oxide. The water tolerant Lewis acids can be a metal salt of a non-coordinating or weakly coordinating anion and a Group IIIB, rare earth or lanthanide, actinide or Group IVB cation. Optionally, carbon oxide may also be present. Examples of such water tolerant Lewis acids are scandium triflate, europium triflate, hafnium triflate, yttrium triflate, lanthanum triflate and ytterbium triflate. The catalyst may contain a coordinating anion instead, examples of which are scandium sulfate [Sc2(SO4)3], scandium chloride [ScCl3], scandium acetate [Sc(OAc)3] and scandium nitrate [Sc(NO3)3]. The catalysts may also contain both a non-coordinating or weakly coordinating anion and a coordinating anion, examples of which are scandium triflate sulfate [Sc(CF3SO3) (SO4)], scandium triflate chloride [Sc(CF3SO3)2Cl], scandium triflate acetate [Sc(CF3SO3)2(OAc)] and scandium triflate nitrate [Sc(CF3SO3)2(NO3)]
摘要翻译:耐水性路易斯酸用于通过相应的环氧烷的催化水合制备亚烷基二醇的方法。 耐水性路易斯酸可以是非配位或弱配位阴离子和IIIB族,稀土或镧系元素,锕系元素或IVB族阳离子的金属盐。 任选地,也可以存在碳氧化物。 这种耐水性路易斯酸的实例是三氟甲磺酸钪,三氟甲磺酸铕,三氟甲磺酸铪,三氟甲磺酸钇,三氟甲磺酸镧和三氟甲磺酸镱。 催化剂可以含有配位阴离子,其实例为硫酸钪[Sc2(SO4)3],氯化钪[ScCl3],钪酸钪[Sc(OAc)3]和硝酸钪[Sc(NO3)3]。 催化剂还可以含有非配位或弱配位阴离子和配位阴离子,其实例是三氟甲磺酸钪[Sc(CF 3 SO 3)(SO 4)],三氟甲磺酸钪[Sc(CF 3 SO 3)2 Cl],三氟甲磺酸钪酯 [Sc(CF 3 SO 3)2(OAc)]和三氟甲磺酸钪[Sc(CF 3 SO 3)2(NO 3)]
摘要:
High Capacity solid state cyanocobaltate complexes represented by the chemical formula:[(A).sub.a (R.sub.4 N).sub.b ].sup.z+.sub.x/z [Co(CN).sub.n ].sup.x- .multidot.pSwhere:A is alkali metal atom, alkaline earth metal atom, Zn, Cd or Hg atom;a is any number from 0 to 2.5each R is independently C.sub.1 -C.sub.1O substituted or unsubstituted alkyl, aryl or aralkyl; or a long chain hydrocarbon polymerb is any number from greater than zero to 3z is 1, 2 or 3;n is any number from 3 to 5;x is n-2;p is any number from greater than zero to 6; andS is a ligand which is capable of coordinating with [(A).sub.a (R.sub.4 N).sub.b 9 .sup.z+, Co or both.are capable of chemically binding oxygen to form novel oxygen adducts, thereby selectively removing oxygen from an oxygen-containing fluid stream. The bound oxygen may be recovered from the complexes by increasing the temperature or by reducing the partial pressure of O.sub.2 above the adduct.
摘要翻译:由[化学式为[(A)a(R4N)b] z + x / z [Co(CN)n] x-xpS表示的高容量固态氰钴酸盐络合物,其中:A为碱金属原子,碱土金属原子, Zn,Cd或Hg原子; a为0至2.5的任何数,每个R独立地为C 1 -C 10取代或未取代的烷基,芳基或芳烷基; 或长链烃聚合物b是大于0至3的任何数为1,2或3; n是从3到5的任何数字; x是n-2; p是从大于零到6的任何数字; 并且S是能够与[(A)a(R 4 N)b 9 z +,Co或两者配位的配体。 能够化学结合氧以形成新的氧加合物,从而从含氧流体物流中选择性地除去氧。 可以通过增加温度或通过降低加合物上方的O 2分压来从络合物中回收结合的氧。