公开(公告)号：US09818373B2

公开(公告)日：2017-11-14

申请号：US14437187

申请日：2013-10-24

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshifumi Ohta ,  Kengo Takahama

IPC: G09G3/36 ,  G09G5/10 ,  G09G3/3233 ,  G09G3/3283

CPC classification number: G09G5/10 ,  G09G3/3233 ,  G09G3/3283 ,  G09G2300/0819 ,  G09G2320/0295 ,  G09G2320/045 ,  G09G2320/046

Abstract: A unit equivalent value acquiring unit acquires a normal-temperature unit equivalent use time Δtn by using a temperature sensor, first to third LUTs, and a first multiplying unit. An integration unit acquires an equivalent cumulative use time to by integrating the normal-temperature unit equivalent use time Δtn. A maximum value detecting unit detects a maximum equivalent cumulative use time tnmax. A dividing unit acquires a correction coefficient Kcmp by dividing total degradation E(tnmax,Tn) acquired by a fourth LUT by total degradation E(tn,Tn) acquired by a fifth LUT. Accordingly, there is provided a data processing device for a display device capable of preventing burn-in while suppressing time degradation of an electro-optical element and increase in the number of wires.

公开(公告)号：US09076718B2

公开(公告)日：2015-07-07

申请号：US14478055

申请日：2014-09-05

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshifumi Ohta ,  Go Mori ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Tetsuya Aita ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Hara

IPC: H01L29/10 ,  H01L21/00 ,  H01L29/22 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/02

CPC classification number: H01L29/22 ,  G02F1/1368 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract translation: 本发明提供一种能够实现具有稳定晶体管特性的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管及其制造方法，以及配备有该薄膜晶体管的显示装置。 本发明的氧化物半导体是薄膜晶体管的氧化物半导体。 氧化物半导体包括铟，镓，锌和氧作为构成原子，并且氧化物半导体的氧含量为化学计量条件的87％至95％，以原子单位计为100％。

公开(公告)号：US11414741B2

公开(公告)日：2022-08-16

申请号：US16981968

申请日：2018-03-22

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Yoshifumi Ohta ,  Masao Nishiguchi

IPC: C23C14/04 ,  H01L51/56 ,  H01L51/00

Abstract: A vapor deposition mask used to manufacture a display device includes a notch portion. The vapor deposition mask is provided with an FMM sheet and a first cover sheet. The first cover sheet includes a trunk portion and a notch forming portion that protrudes from the trunk portion and prevents film formation on the notch portion, and the thickness of at least a part of the notch forming portion is smaller than the thickness of the trunk portion.

公开(公告)号：US09495894B2

公开(公告)日：2016-11-15

申请号：US14759440

申请日：2013-12-25

Applicant: Sharp Kabushiki Kaisha

Inventor： Shigetsugu Yamanaka ,  Shinji Nakagawa ,  Hiroyuki Furukawa ,  Yoshifumi Ohta

IPC: H05B33/08 ,  H01L27/07 ,  G09G3/36 ,  G01D4/00 ,  H04N19/61 ,  H04N5/20 ,  G09G3/20 ,  H04N7/26 ,  H04N1/41 ,  G09G3/14 ,  G09G3/32 ,  H01L51/50

CPC classification number: G09G3/14 ,  G09G3/2011 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3283 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/0271 ,  G09G2320/045 ,  G09G2320/046 ,  G09G2320/0633 ,  G09G2340/02 ,  H01L51/50

Abstract: An embodiment of the present invention is directed to reducing a memory capacity required for saving compensating data (data used for compensating variations and the like in characteristic of a drive transistor) compared to conventional examples, in a display device. An organic EL display device using an oxide TFT for a drive transistor is provided with: a low pass filter for extracting low frequency component data from pixel current data as data of a drive current of the drive transistor; a first computing portion for obtaining high frequency component data by obtaining a difference between the pixel current data and the low frequency component data; a down-sampling portion for extracting data from the low frequency component data at predetermined sampling intervals; and a high frequency signal compression processing portion for extracting only high amplitude data out of the high frequency component data.

Abstract translation: 在显示装置中，本发明的一个实施例涉及减少用于保存补偿数据所需的存储器容量（用于补偿驱动晶体管的特性中的变化等的数据）。 使用用于驱动晶体管的氧化物TFT的有机EL显示装置设置有：低通滤波器，用于从像素电流数据中提取低频分量数据作为驱动晶体管的驱动电流的数据; 第一计算部分，用于通过获得像素电流数据和低频分量数据之间的差来获得高频分量数据; 下采样部分，用于以预定的采样间隔从低频分量数据中提取数据; 以及用于仅从高频分量数据中提取高振幅数据的高频信号压缩处理部分。

公开(公告)号：US11903239B2

公开(公告)日：2024-02-13

申请号：US17276700

申请日：2018-09-27

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Yoshifumi Ohta

IPC: H10K50/844 ,  H10K71/00 ,  H10K77/10 ,  H10K102/00 ,  H10K59/12

CPC classification number: H10K50/844 ,  H10K71/00 ,  H10K77/111 ,  H10K59/1201 ,  H10K2102/311

Abstract: A display device includes the following: a base substrate; a light-emitting element on the base substrate with a TFT layer interposed therebetween, the light-emitting element forming a display region; a sealing film covering the light-emitting element and having a stack of, in sequence, first and second inorganic insulating films; a frame region surrounding the display region; a cut disposed in the frame region so as to partly cut the display region; a cut-peripheral wall disposed in the frame region between the display region and the cut, and extending along the boundary of the display region; an evaporated film between the cut-peripheral wall and the first inorganic insulating film; and an organic buffer layer disposed on a surface of the cut-peripheral wall and interposed between the first and second inorganic insulating films.

公开(公告)号：US11380871B2

公开(公告)日：2022-07-05

申请号：US16975006

申请日：2018-02-26

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Yixin Yang ,  Yoshifumi Ohta ,  Jumpei Takahashi

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: A display device includes: a base substrate having a display area and a frame area, the display area to display an image, the frame area surrounding the display area; a light-emitting element in the display area; and a sealing film provided in the display area and the frame area so as to cover the light-emitting element, the sealing film including a first inorganic film, an organic film, and a second inorganic film, wherein the first inorganic film covers the light-emitting element, a third inorganic film is provided between the first inorganic film and the organic film, the third inorganic film having higher wettability for a liquid drop, the organic film on the first inorganic film covers the third inorganic film, and the second inorganic film covers the peripheral end portion of the first inorganic film and the organic film.

公开(公告)号：US11329110B2

公开(公告)日：2022-05-10

申请号：US16957271

申请日：2017-12-27

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Yoshifumi Ohta

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A display device includes: a base substrate; light-emitting elements on the base substrate with a TFT layers intervening between the light-emitting elements and the base substrate, to form a display area; a sealing film including a sequentially formed stack of a first inorganic film and a second inorganic film and provided so as to cover the light-emitting elements; and an insular non-display area in the display area, wherein the non-display area includes a frame-shaped inner circular wall protruding in a thickness direction of the base substrate and extending along a boundary between the non-display area and the display area, and the inner circular wall includes on a surface thereof an organic buffer layer interposed between the first inorganic film and the second inorganic film.

公开(公告)号：US10461270B2

公开(公告)日：2019-10-29

申请号：US16085606

申请日：2017-03-22

Applicant: Sharp Kabushiki Kaisha

Inventor： Mamoru Ishida ,  Yoshifumi Ohta ,  Takeshi Hirase ,  Takashi Ochi ,  Tohru Senoo ,  Tohru Sonoda

IPC: H01L51/50 ,  G06F3/041 ,  G06F3/0488 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

Abstract: An organic EL display device includes an organic EL display panel having a plastic substrate exhibiting flexibility and organic EL elements formed on the plastic substrate, a first inorganic layer provided on an upper surface of the organic EL display panel, and a second inorganic layer provided on a lower surface of the organic EL display panel. The entire thickness T of the organic EL display device is equal to or less than 74 μm.

公开(公告)号：US09953563B2

公开(公告)日：2018-04-24

申请号：US14784391

申请日：2014-03-04

Applicant: Sharp Kabushiki Kaisha

Inventor： Noritaka Kishi ,  Hiromitsu Katsui ,  Noboru Noguchi ,  Masanori Ohara ,  Shigetsugu Yamanaka ,  Yoshifumi Ohta

IPC: G09G3/30 ,  G09G3/3241 ,  G09G3/3266

CPC classification number: G09G3/30 ,  G09G3/3241 ,  G09G3/3266 ,  G09G2300/0426 ,  G09G2310/0202 ,  G09G2310/0251 ,  G09G2310/0275 ,  G09G2320/0285 ,  G09G2320/045 ,  G09G2330/021 ,  G09G2330/027 ,  G09G2330/028 ,  G09G2330/12

Abstract: A data line drive circuit provides a voltage according to a detection voltage and to a reference voltage, between the gate and source of a drive transistor in a pixel circuit, and detects a drive current having passed through the drive transistor and outputted external to the pixel circuit. A threshold voltage correction memory stores, for each pixel circuit, data representing a threshold voltage of the drive transistor. A display control circuit controls the reference voltage based on the data stored in the threshold voltage correction memory. By this, even if the threshold voltage of the drive transistor is changed, the drive current can be detected with a high accuracy. The threshold voltage correction memory may store, for each pixel circuit, data representing a difference between the threshold voltage of the drive transistor and the reference voltage.

公开(公告)号：US20150279324A1

公开(公告)日：2015-10-01

申请号：US14437187

申请日：2013-10-24

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Yoshifumi Ohta ,  Kengo Takahama

IPC: G09G5/10 ,  G09G3/32

CPC classification number: G09G5/10 ,  G09G3/3233 ,  G09G3/3283 ,  G09G2300/0819 ,  G09G2320/0295 ,  G09G2320/045 ,  G09G2320/046

Abstract: A unit equivalent value acquiring unit acquires a normal-temperature unit equivalent use time Δtn by using a temperature sensor, first to third LUTs, and a first multiplying unit. An integration unit acquires an equivalent cumulative use time to by integrating the normal-temperature unit equivalent use time Δtn. A maximum value detecting unit detects a maximum equivalent cumulative use time tnmax. A dividing unit acquires a correction coefficient Kcmp by dividing total degradation E(tnmax,Tn) acquired by a fourth LUT by total degradation E(tn,Tn) acquired by a fifth LUT. Accordingly, there is provided a data processing device for a display device capable of preventing burn-in while suppressing time degradation of an electro-optical element and increase in the number of wires.

Abstract translation: 单位等价值获取单元通过使用温度传感器，第一至第三LUT和第一乘法单元获取常温单位等效使用时间＆lt; Dgr; tn。 整合单元通过对常温单位等效使用时间＆Dgr; tn进行积分来获取等效的累积使用时间。 最大值检测单元检测最大等效累积使用时间tnmax。 分割单元通过将通过第四LUT获得的总衰减E（tnmax，Tn）除以由第五LUT获取的总衰减E（tn，Tn）来获取校正系数Kcmp。 因此，提供了一种用于能够防止老化的显示装置的数据处理装置，同时抑制电光元件的时间劣化和电线数量的增加。