Process for producing a water-absorbent resin
    1.
    发明授权
    Process for producing a water-absorbent resin 失效
    吸水性树脂的制造方法

    公开(公告)号:US4880888A

    公开(公告)日:1989-11-14

    申请号:US238

    申请日:1987-01-05

    CPC分类号: C08F20/04 F02B1/04

    摘要: A water-absorbent resin having excellent physical properties can be produced by a process wherein an aqueous solution containing an .alpha.,.beta.-unsaturated carboxylic acid and an alkali metal salt thereof in a total amount of 25% by weight or more is subjected to polymerization with a radical polymerization initiator in a petroleum-based hydrocarbon solvent in the presence or absence of a crosslinking agent, characterized by using, as a surfactant, a polyglycerine--fatty acid ester having an HLB of 2 to 16 and represented by the general formula ##STR1## (wherein R is an acyl group or hydrogen atom and n is an integer of 0 to 8).

    摘要翻译: 具有优异物理性质的吸水性树脂可以通过以下方法制备,其中将含有总量为25重量%以上的α,β-不饱和羧酸及其碱金属盐的水溶液与 在存在或不存在交联剂的情况下,在石油基烃溶剂中的自由基聚合引发剂,其特征在于使用HLB为2〜16的聚甘油 - 脂肪酸酯作为表面活性剂,由通式(其中R是酰基或氢原子,n是0至8的整数)。

    Semiconductor device having boosting circuit
    8.
    发明授权
    Semiconductor device having boosting circuit 失效
    具有升压电路的半导体装置

    公开(公告)号:US08633758B2

    公开(公告)日:2014-01-21

    申请号:US13064237

    申请日:2011-03-11

    IPC分类号: G05F1/10 G05F3/02

    摘要: A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.

    摘要翻译: 一种半导体器件包括:升压电路,其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器 电路包括连接到升压电路的输出端子的可变电阻器。 可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

    Supply voltage generating circuit
    10.
    发明授权

    公开(公告)号:US08493132B2

    公开(公告)日:2013-07-23

    申请号:US12052422

    申请日:2008-03-20

    IPC分类号: G05F1/10

    摘要: A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.