利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.029 秒)

    Sputter source, sputtering device, and sputtering method
    1.
    发明授权
    Sputter source, sputtering device, and sputtering method 有权
    溅射源，溅射装置和溅射法

    公开(公告)号：US07347919B2

    公开(公告)日：2008-03-25

    申请号：US10848008

    申请日：2004-05-19

    申请人： Shigemitsu Sato ,  Masasuke Matsudai ,  Hiroki Oozora ,  Junya Kiyota ,  Hajime Nakamura ,  Satoru Ishibashi ,  Atsushi Ota

    发明人： Shigemitsu Sato ,  Masasuke Matsudai ,  Hiroki Oozora ,  Junya Kiyota ,  Hajime Nakamura ,  Satoru Ishibashi ,  Atsushi Ota

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3408 ,  C23C14/086 ,  C23C14/352 ,  H01J37/3455

    摘要： According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.

    摘要翻译： 根据本发明，当溅射靶时，它们中的每一个相对于基底移动; 因此，在溅射期间，基板的整个区域与靶相对，从而可以在基板的表面上形成质量均匀的膜。 在溅射期间，不仅目标而且磁场形成装置相对于目标物移动，因此可以溅射大面积的靶。 此外，当磁场形成装置也相对于衬底移动时，高度溅射的靶的区域相对于衬底移动，使得形成在衬底上的膜的厚度分布可以是均匀的 更统一

    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor
    4.
    发明申请
    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
    溅射装置，薄膜​​形成方法和场效应晶体管的制造方法

    公开(公告)号：US20110195562A1

    公开(公告)日：2011-08-11

    申请号：US13123727

    申请日：2009-10-14

    申请人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    发明人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    IPC分类号： H01L21/203 ,  C23C14/34

    CPC分类号： C23C14/083 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

    摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] A sputtering apparatus according to an embodiment of the present invention is a sputtering apparatus for forming a thin-film on a surface to be processed of a substrate 10, and includes a vacuum chamber 61, a supporting portion 93, a target 80, and a magnet 83. The magnet 83 generates plasma forming a region to be sputtered 80a, and moves the region to be sputtered 80abetween a first position in which the region to be sputtered 80a is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed. With this, it is possible to weaken incident energy of sputtered particles incident on the surface to be processed of the substrate 10 from the region to be sputtered 80a, and to protect the base layer.

    摘要翻译： 本发明提供能够降低基底层损伤的溅射装置，薄膜​​形成方法和场效晶体管的制造方法。 本发明的实施方式的溅射装置是在基板10的被处理面上形成薄膜的溅射装置，具有真空室61，支撑部93，靶 80和磁体83.磁体83产生等离子体，形成要溅射的区域80a，并且在要溅射的区域80a与待处理的表面不相对的第一位置之间移动要溅射的区域80， 第二位置，其中要溅射的区域与待处理的表面相对。 由此，可以从入射到被溅射区域80a上的入射到待处理基板10的表面上的溅射粒子的入射能量减弱，从而保护基底层。

    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor
    6.
    发明申请
    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
    溅射装置，薄膜​​形成方法和场效应晶体管的制造方法

    公开(公告)号：US20110201150A1

    公开(公告)日：2011-08-18

    申请号：US13123728

    申请日：2009-10-09

    申请人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    发明人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    IPC分类号： H01L21/36 ,  C23C14/34 ,  C23C14/08

    CPC分类号： C23C14/352 ,  C23C14/568 ,  H01J37/32752 ,  H01J37/3408

    摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] The sputtering apparatus 100 includes a conveying mechanism, a first target Tc1, a second target (Tc2 to Tc5), and a sputtering means. The conveying mechanism conveys a supporting portion, which is arranged in an inside of a vacuum chamber and supports a substrate, linearly along a conveying surface parallel to the surface to be processed of the substrate. The first target Tc1 is opposed to the conveying surface with a first space therebetween. The second target (Tc2 to Tc5) is arranged on a downstream side in a conveying direction of the substrate with respect to the first target Tc1, and is opposed to the conveying surface with a second space smaller than the first space therebetween. The sputtering means sputters each target. According to this sputtering apparatus 100, the damage received by the base layer is small, and hence it is possible to form a thin-film having good film-forming properties.

    摘要翻译： 本发明提供能够降低基底层损伤的溅射装置，薄膜​​形成方法和场效晶体管的制造方法。 [解决方案]溅射装置100包括传送机构，第一目标Tc1，第二目标（Tc2至Tc5）和溅射装置。 传送机构传送支撑部分，其布置在真空室的内部并且沿着平行于待处理基板的表面的输送表面线性地支撑基板。 第一目标Tc1与其间具有第一空间的输送表面相对。 第二靶（Tc2〜Tc5）相对于第一靶Tc1布置在基板的输送方向的下游侧，并且与输送面相对，第二空间小于第一空间。 溅射意味着喷射每个目标。 根据该溅射装置100，由基底层接收的损伤小，因此可以形成具有良好成膜性能的薄膜。

    Magnetron sputtering method and magnetron sputtering apparatus
    7.
    发明申请
    Magnetron sputtering method and magnetron sputtering apparatus 审中-公开
    磁控管溅射法和磁控溅射装置

    公开(公告)号：US20070158180A1

    公开(公告)日：2007-07-12

    申请号：US11606363

    申请日：2006-11-30

    申请人： Atsushi Ota ,  Shinichiro Taguchi ,  Isao Sugiura ,  Noriaki Tani ,  Makoto Arai ,  Junya Kiyota

    发明人： Atsushi Ota ,  Shinichiro Taguchi ,  Isao Sugiura ,  Noriaki Tani ,  Makoto Arai ,  Junya Kiyota

    IPC分类号： C23C14/32 ,  C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/352

    摘要： The present invention provides a magnetron sputtering method and a magnetron sputtering apparatus that can significantly reduce a non-erosion region causing an abnormal electrical discharge on a surface of a target and deposition of target materials. A plurality of targets 8A, 8B, 8C and 8D are disposed in a vacuum atmosphere while being electrically independent to each other; and sputtering is performed by generating magnetron discharge in the vicinity of the targets 8A, 8B, 8C and 8D. During the sputtering, voltages having a phase difference of 180 degrees are alternately applied to the adjacent targets 8A, 8B, 8C and 8D at a predetermined timing.

    摘要翻译： 本发明提供一种磁控管溅射法和磁控管溅射装置，其可以显着地减少导致靶的表面上的异常放电的非侵蚀区域和目标材料的沉积。 多个靶8A，8B，8C和8D设置在真空气氛中，同时彼此电独立; 通过在靶8A，8B，8C和8D附近产生磁控管放电来进行溅射。在溅射期间，将相位差为180度的电压交替施加到相邻靶8A，8B ，8C和8D。

    Method of forming thin film and apparatus for forming thin film
    8.
    发明授权
    Method of forming thin film and apparatus for forming thin film 有权
    薄膜形成方法及薄膜形成装置

    公开(公告)号：US08460522B2

    公开(公告)日：2013-06-11

    申请号：US12446888

    申请日：2007-10-12

    申请人： Yuichi Oishi ,  Takashi Komatsu ,  Junya Kiyota ,  Makoto Arai

    发明人： Yuichi Oishi ,  Takashi Komatsu ,  Junya Kiyota ,  Makoto Arai

    IPC分类号： C23C14/35

    CPC分类号： C23C14/352 ,  C23C14/568 ,  H01J37/32376 ,  H01J37/3408 ,  H01J37/3455

    摘要： A plurality of targets are disposed in parallel with, and at a given distance to, one another. In case a predetermined thin film is formed by sputtering, the occurrence of non-uniformity in the film thickness distribution and the film quality distribution can be restricted. During the time when electric power is charged to a plurality of targets (31a to 31h) which are disposed inside a sputtering chamber (11a) so as to lie opposite to the process substrate (S), and are disposed at a predetermined distance from, and in parallel with, one another, thereby forming a predetermined thin film by sputtering, each of the targets is reciprocated at a constant speed in parallel with the process substrate. Also, magnet assemblies that form tunnel-shaped magnetic flux (M) in front of each target are reciprocated at a constant speed in parallel with each of the targets. When each of the targets has reached a turning position of the reciprocating movement, the reciprocating movement of each of the targets is stopped for a predetermined period of time.

    摘要翻译： 多个目标被设置成彼此平行并且彼此以给定的距离。 在通过溅射形成预定薄膜的情况下，可以限制膜厚分布的不均匀性和膜质量分布的发生。 在将电力充电到设置在溅射室（11a）内部以与处理基板（S）相对设置的多个靶（31a〜31h）的时间内，并且与预定距离配置， 并且彼此平行，由此通过溅射形成预定的薄膜，每个靶与处理基板平行地以恒定的速度往复运动。 此外，在每个目标前方形成隧道状磁通（M）的磁体组件以与每个目标平行的恒定速度往复运动。 当每个目标已经到达往复运动的转动位置时，每个目标的往复运动停止预定的时间段。

    MAGNETRON SPUTTERING ELECTRODE, AND SPUTTERING APPARATUS PROIDED WITH MAGNETRON SPUTTERING ELECTRODE
    9.
    发明申请
    MAGNETRON SPUTTERING ELECTRODE, AND SPUTTERING APPARATUS PROIDED WITH MAGNETRON SPUTTERING ELECTRODE 有权
    MAGNETRON喷溅电极，以及配有MAGNETRON SPUTTERING ELECTRODE的溅射装置

    公开(公告)号：US20100051454A1

    公开(公告)日：2010-03-04

    申请号：US12514513

    申请日：2007-11-13

    申请人： Yasuhiko Akamatsu ,  Tatsunori Isobe ,  Makoto Arai ,  Junya Kiyota ,  Takashi Komatsu

    发明人： Yasuhiko Akamatsu ,  Tatsunori Isobe ,  Makoto Arai ,  Junya Kiyota ,  Takashi Komatsu

    IPC分类号： C23C14/35

    CPC分类号： C23C14/35 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3455

    摘要： In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.

    摘要翻译： 在磁控管溅射装置中，使得靶的周边部分均匀地被侵蚀以达到目标利用率高的结构，并且几乎不发生异常放电，从而能够令人满意的薄膜形成。 设置在与加工基板相对设置的靶之后的磁体组件。 该磁体组件具有沿着纵向方向线性设置的中心磁体，以及设置成围绕中心磁体的周边而设置的外围磁体，同时改变目标侧的极性。 此时，在磁体组件的纵向端部处的中心磁体和周边磁体之间产生的各磁通中，磁场的垂直分量为零的位置在一定位置内局部偏移到中心磁体 一定范围

    Magnetron sputtering electrode, and sputtering apparatus provided with magnetron sputtering electrode
    10.
    发明授权
    Magnetron sputtering electrode, and sputtering apparatus provided with magnetron sputtering electrode 有权
    磁控溅射电极和设置有磁控溅射电极的溅射装置

    公开(公告)号：US08172993B2

    公开(公告)日：2012-05-08

    申请号：US12514513

    申请日：2007-11-13

    申请人： Yasuhiko Akamatsu ,  Tatsunori Isobe ,  Makoto Arai ,  Junya Kiyota ,  Takashi Komatsu

    发明人： Yasuhiko Akamatsu ,  Tatsunori Isobe ,  Makoto Arai ,  Junya Kiyota ,  Takashi Komatsu

    IPC分类号： C23C14/35

    CPC分类号： C23C14/35 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3455

    摘要： In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.

    摘要翻译： 在磁控管溅射装置中，使得靶的周边部分均匀地被侵蚀以达到目标利用率高的结构，并且几乎不发生异常放电，从而能够令人满意的薄膜形成。 设置在与加工基板相对设置的靶之后的磁体组件。 该磁体组件具有沿着纵向方向线性设置的中心磁体，以及设置成围绕中心磁体的周边而设置的外围磁体，同时改变目标侧的极性。 此时，在磁体组件的纵向端部处的中心磁体和周边磁体之间产生的各磁通中，磁场的垂直分量为零的位置在一定位置内局部偏移到中心磁体 一定范围