公开(公告)号：US09536881B2

公开(公告)日：2017-01-03

申请号：US14259912

申请日：2014-04-23

申请人： Shigenobu Maeda ,  Sung-Bong Kim ,  Chang-Wook Moon ,  Dong-Hun Lee ,  Hyung-Soon Jang ,  Sang-Pil Sim

发明人： Shigenobu Maeda ,  Sung-Bong Kim ,  Chang-Wook Moon ,  Dong-Hun Lee ,  Hyung-Soon Jang ,  Sang-Pil Sim

IPC分类号： H01L27/11 ,  H01L27/092 ,  H01L27/02 ,  H01L21/8238

CPC分类号： H01L27/0924 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0207 ,  H01L27/1108

摘要： Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

摘要翻译： 提供半导体器件。 半导体器件包括第一鳍片; 与第一鳍相交的第一栅电极; 第一鳍片上的第一栅电极的相应侧上的第一升高源极和/或漏极; 以及与第一鳍相邻的第一场电介质膜。 第一场介电膜包括在第一翅片的顶表面下方的第一部分和从第一部分突出并且与第一升高源和/或漏极接触的第一鳍片的顶表面突出的第二部分。

公开(公告)号：US20140312427A1

公开(公告)日：2014-10-23

申请号：US14259912

申请日：2014-04-23

申请人： Shigenobu Maeda ,  Sung-Bong Kim ,  Chang-Wook Moon ,  Dong-Hun Lee ,  Hyung-Soon Jang ,  Sang-Pil Sim

发明人： Shigenobu Maeda ,  Sung-Bong Kim ,  Chang-Wook Moon ,  Dong-Hun Lee ,  Hyung-Soon Jang ,  Sang-Pil Sim

IPC分类号： H01L27/11 ,  H01L27/092

CPC分类号： H01L27/0924 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0207 ,  H01L27/1108

摘要： Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.

摘要翻译： 提供半导体器件。 半导体器件包括第一鳍片; 与第一鳍相交的第一栅电极; 第一鳍片上的第一栅电极的相应侧上的第一升高源极和/或漏极; 以及与第一鳍相邻的第一场电介质膜。 第一场介电膜包括在第一翅片的顶表面下方的第一部分和从第一部分突出并且与第一升高源和/或漏极接触的第一鳍片的顶表面突出的第二部分。

公开(公告)号：US20140353769A1

公开(公告)日：2014-12-04

申请号：US14463394

申请日：2014-08-19

申请人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

发明人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC分类号： H01L29/10 ,  H01L27/088 ,  H01L29/78

CPC分类号： H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US08836046B2

公开(公告)日：2014-09-16

申请号：US14021465

申请日：2013-09-09

申请人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

发明人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

摘要翻译： 半导体器件可以包括场绝缘层，其包括在第一和第二正交方向上延伸的平面主表面和从主表面相对于第一和第二正交方向突出特定距离的突出部分。 第一和第二多通道活性翅片可以在场绝缘层上延伸，并且可以通过突出部分彼此分离。 导电层可以从突出部分的最上表面延伸到与第一和第二多通道活性鳍片之间的突出部分交叉。

公开(公告)号：US20140151810A1

公开(公告)日：2014-06-05

申请号：US14021465

申请日：2013-09-09

申请人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

发明人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC分类号： H01L29/78

CPC分类号： H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US09627483B2

公开(公告)日：2017-04-18

申请号：US14463394

申请日：2014-08-19

申请人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

发明人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L27/12 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/775

CPC分类号： H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US09419077B2

公开(公告)日：2016-08-16

申请号：US14458955

申请日：2014-08-13

申请人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

发明人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/775

CPC分类号： H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

摘要翻译： 半导体器件可以包括场绝缘层，其包括在第一和第二正交方向上延伸的平面主表面和从主表面相对于第一和第二正交方向突出特定距离的突出部分。 第一和第二多通道活性翅片可以在场绝缘层上延伸，并且可以通过突出部分彼此分离。 导电层可以从突出部分的最上表面延伸到与第一和第二多通道活性鳍片之间的突出部分交叉。

公开(公告)号：US20140346602A1

公开(公告)日：2014-11-27

申请号：US14458955

申请日：2014-08-13

申请人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

发明人： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/06

CPC分类号： H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

摘要翻译： 半导体器件可以包括场绝缘层，其包括在第一和第二正交方向上延伸的平面主表面和从主表面相对于第一和第二正交方向突出特定距离的突出部分。 第一和第二多通道活性翅片可以在场绝缘层上延伸，并且可以通过突出部分彼此分离。 导电层可以从突出部分的最上表面延伸到与第一和第二多通道活性鳍片之间的突出部分交叉。

公开(公告)号：US20170077097A1

公开(公告)日：2017-03-16

申请号：US15010327

申请日：2016-01-29

申请人： YAOQI DONG ,  Mun Hyeon Kim ,  Keun Hwi Cho ,  Shigenobu Maeda ,  Han Su Oh

发明人： YAOQI DONG ,  Mun Hyeon Kim ,  Keun Hwi Cho ,  Shigenobu Maeda ,  Han Su Oh

IPC分类号： H01L27/092 ,  H01L29/161 ,  H01L23/535 ,  H01L29/49 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165

CPC分类号： H01L23/535 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： Provided is a semiconductor device having first and second gate electrodes. The semiconductor device includes a substrate, an active region extending in a first direction on the substrate, a first gate electrode crossing the active region and extending in a second direction, and a second gate electrode extending in the second direction on the first gate electrode, wherein the first gate electrode has a first width in the first direction, and wherein the second gate electrode has a second width in the first direction, the second width being less than the first width.

摘要翻译： 提供了具有第一和第二栅电极的半导体器件。 半导体器件包括衬底，在衬底上沿第一方向延伸的有源区，与有源区交叉并沿第二方向延伸的第一栅极，以及在第一栅电极上沿第二方向延伸的第二栅电极， 其中所述第一栅极具有在所述第一方向上的第一宽度，并且其中所述第二栅极具有在所述第一方向上的第二宽度，所述第二宽度小于所述第一宽度。

公开(公告)号：US09431537B2

公开(公告)日：2016-08-30

申请号：US14669082

申请日：2015-03-26

申请人： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

发明人： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L27/092 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

摘要： Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

摘要翻译： 形成半导体器件的方法可以包括形成在衬底上沿第一方向延伸的鳍式有源图案，鳍型有源图案包括在衬底上的下图案和下图案上的上图案。 场绝缘层形成在衬底上，翅片型有源图案的侧壁和远离衬底的部分上部图案远离场绝缘层的顶表面。 形成与翅片型有源图案相交并且沿与第一方向不同的第二方向延伸的伪栅极图案。 所述方法包括在伪栅极图案的侧壁上形成虚拟栅极间隔物，在虚拟栅极图案的两侧上形成鳍状有源图案中的凹槽，并在虚拟栅极图案的两侧形成源区和漏极区。