CONNECTION MEMBER, METHOD OF MANUFACTURING THE SAME AND CONNECTION STRUCTURE
    3.
    发明申请
    CONNECTION MEMBER, METHOD OF MANUFACTURING THE SAME AND CONNECTION STRUCTURE 有权
    连接构件,其制造方法和连接结构

    公开(公告)号:US20120156926A1

    公开(公告)日:2012-06-21

    申请号:US13313595

    申请日:2011-12-07

    IPC分类号: H01R11/11 D03D15/00 H01R43/00

    摘要: A connection member which is electrically connected to a conductive fabric having conductive threads, a method for manufacturing the connection member, and a connection structure are provided. The connection member includes a band-shaped part including conductive wires which extend in a longitudinal direction, and a connection terminal which is attached to an end portion of the conductive wires. The method includes forming an original band-shaped member by weaving while using the conductive wires for a part of warp and using at least non-conductive threads for weft; exposing the conductive wires at an end portion of the original band-shaped member;and attaching a connection terminal to the exposed conductive wires. The connection structure includes the conductive fabric and the connection member, and the conductive wires of the connection member are electrically connected to the conductive threads exposed from the conductive fabric.

    摘要翻译: 提供电连接到具有导电线的导电织物的连接构件,连接构件的制造方法和连接结构。 连接构件包括包括沿纵向方向延伸的导线的带状部分和附接到导线的端部的连接端子。 该方法包括通过编织而形成原始的带状构件,同时使用导电线作为翘曲的一部分,并且至少使用非导电丝线用于纬纱; 在原始带状构件的端部露出导线; 以及将连接端子连接到暴露的导线上。 连接结构包括导电织物和连接构件,并且连接构件的导电电连接到从导电织物暴露的导电线。

    SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING PATTERN PEELING
    5.
    发明申请
    SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING PATTERN PEELING 有权
    可防止图案剥落的半导体器件

    公开(公告)号:US20120280364A1

    公开(公告)日:2012-11-08

    申请号:US13461261

    申请日:2012-05-01

    申请人: Kohei KATO

    发明人: Kohei KATO

    IPC分类号: H01L23/544

    CPC分类号: G03F1/38

    摘要: A semiconductor device includes a first pattern and a plurality of second patterns arranged at equal intervals. When the distance of the space between the first pattern and the second pattern closet to the first pattern is larger than a first distance, a plurality of dummy patterns are arranged in the space with shapes and intervals similar to those of the second patterns. When the distance of the space is equal to or less than the first distance and larger than a second distance, the dummy pattern is spaced from the second pattern closest to the first pattern, and extends toward the first pattern to be brought into contact with the first pattern. When the distance of the space is equal to or less than the second distance, the dummy pattern is spaced from the second pattern closest to the first pattern, and is connected to the first pattern.

    摘要翻译: 半导体器件包括第一图案和以等间隔布置的多个第二图案。 当第一图案和第二图案壁橱之间的空间与第一图案的距离大于第一距离时,在空间中布置多个虚拟图案,其形状和间隔类似于第二图案。 当空间的距离等于或小于第一距离并且大于第二距离时,虚拟图案与最接近第一图案的第二图案间隔开,并且朝向第一图案延伸以与第一图案接触 第一种模式 当空间的距离等于或小于第二距离时,虚拟图案与最接近第一图案的第二图案间隔开,并且连接到第一图案。