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    Semiconductor pressure sensor having plural pressure sensitive diaphragms and method
    5.
    发明授权
    Semiconductor pressure sensor having plural pressure sensitive diaphragms and method 失效
    具有多个压敏膜的半导体压力传感器及方法

    公开(公告)号：US4322980A

    公开(公告)日：1982-04-06

    申请号：US170663

    申请日：1979-11-08

    申请人： Seikou Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Hiroaki Hachino ,  Minoru Takahashi

    发明人： Seikou Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Hiroaki Hachino ,  Minoru Takahashi

    IPC分类号： G01L9/00 ,  G01L9/06 ,  H01L23/15 ,  H01L27/20

    CPC分类号： G01L19/147 ,  G01L19/0038 ,  G01L19/148 ,  G01L9/0054 ,  G01L9/065 ,  H01L23/15 ,  H01L27/20 ,  H01L2224/45144 ,  H01L2224/48091

    摘要： A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures.A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.

    摘要翻译： 一种半导体压力传感器，具有多个压敏光阑，并能产生至少两个压力的电信号。 半导体压力传感器具有半导体单晶芯片（1），其上形成有两个隔膜（12a，12b），成对的应变计（13a和14a和13b和14b），每个压敏传感器在每个压敏敏感元件 隔膜，用于半导体单晶上的这些应变计的电连接的电极（15a和16a，15b和16b）和硼硅酸盐玻璃的绝缘基板，热膨胀系数基本上等于所述半导体单晶 晶体芯片，其中半导体单晶芯片（1）和玻璃基板（2）通过阳极接合方法彼此接合，从而能够获得几乎不产生误差输出的半导体压力传感器。

    Two-wire communication system
    6.
    发明授权
    Two-wire communication system 失效
    双线通信系统

    公开(公告)号：US4737787A

    公开(公告)日：1988-04-12

    申请号：US919764

    申请日：1986-10-16

    申请人： Yukio Ito ,  Kazuji Yamada ,  Yasushi Shimizu ,  Shigeyuki Kobori

    发明人： Yukio Ito ,  Kazuji Yamada ,  Yasushi Shimizu ,  Shigeyuki Kobori

    IPC分类号： H04J99/00 ,  G08C19/02 ,  H04B3/50 ,  H04B3/54 ,  H04L5/16 ,  G08C19/16

    CPC分类号： G08C19/02 ,  H04B3/548 ,  H04L5/16 ,  H04B2203/5408 ,  H04B2203/5458 ,  H04B2203/547

    摘要： A two-wire communication system comprising a transmitting unit having constant current characteristics for controlling an output current thereof on the basis of a signal supplied from a sensor, a receiving unit for receiving a control signal to control the sensor, a load resistor and power supply connected in series with the transmitting unit via a two-wire transmission path, and a communication unit so connected in parallel to the load resistor as to convey the output current of the transmitting unit to the process side and control a current from the power supply transmitted onto the transmission path on the basis of information supplied from the process side. With this configuration, a communication system is provided which makes possible replacing process variable transmitters in a conventional analog control system or installing process variable transmitters in a new analog control system, which makes possible remotely setting and adjusting the transmitter function by the communication unit in the above described system, which makes it possible for the control computer to control as far as terminals, and which facilitates digitization of the system.

    摘要翻译： 一种双线通信系统，包括具有恒定电流特性的发送单元，用于基于从传感器提供的信号来控制其输出电流;接收单元，用于接收控制信号以控制传感器;负载电阻器和电源 通过双线传输路径与发射单元串联连接，以及与负载电阻并联连接的通信单元，以将发送单元的输出电流传送到处理侧，并控制来自发送的电源的电流 基于从处理侧提供的信息到传输路径上。 利用这种配置，提供了一种通信系统，其使得可以在常规模拟控制系统中替换过程变量发射机或在新的模拟控制系统中安装过程变量发射机，这使得可以通过通信单元远程设置和调整发射机功能 上述系统，这使得控制计算机可以控制到终端，并且有助于系统的数字化。

    Semiconductor absolute pressure transducer assembly and method
    7.
    发明授权
    Semiconductor absolute pressure transducer assembly and method 失效
    半导体绝对压力传感器组件及方法

    公开(公告)号：US4291293A

    公开(公告)日：1981-09-22

    申请号：US76813

    申请日：1979-09-19

    申请人： Kazuji Yamada ,  Seiko Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Ryosaku Kanzawa ,  Minoru Takahashi ,  Hitoshi Minorikawa

    发明人： Kazuji Yamada ,  Seiko Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Ryosaku Kanzawa ,  Minoru Takahashi ,  Hitoshi Minorikawa

    IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L23/08 ,  H01L29/84 ,  G01L1/22

    CPC分类号： G01L9/0042 ,  G01L9/0054

    摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

    摘要翻译： 一种半导体压力传感器组件，包括硅膜组件和玻璃覆盖件。 硅膜组件具有通过蚀刻形成的薄硅的圆形隔膜部分和其周围的厚的支撑部分。 在硅膜组件上形成压阻电桥电路的压阻元件和用于电连接的导电路径。 在硅膜组件的表面上形成均匀厚度的二氧化硅钝化层，并且在钝化层的表面上进一步在硅膜组件的支撑部分上形成多晶硅层。 在钝化层中，形成接触窗，多晶硅层通过该接触窗电连接到硅膜组件。 使用阳极接合方法将具有圆形孔的硼硅酸盐玻璃的覆盖部件安装并接合到与硅多晶硅层接触的硅膜组件上。 并且经处理的硅膜组件具有平坦的表面，在其上使用离子注入方法构建压阻元件和导电路径，或者在去除扩散过程中用作掩模的另一二氧化硅层之后重新形成二氧化硅层。

    Method of making silicon diaphragm pressure sensor
    8.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号：US4670969A

    公开(公告)日：1987-06-09

    申请号：US694990

    申请日：1985-01-25

    申请人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    发明人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

    CPC分类号： G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

    摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    摘要翻译： 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

    Pressure sensor with improved semiconductor diaphragm
    9.
    发明授权
    Pressure sensor with improved semiconductor diaphragm 失效
    带有改进的半导体膜片的压力传感器

    公开(公告)号：US4511878A

    公开(公告)日：1985-04-16

    申请号：US534076

    申请日：1983-09-20

    申请人： Satoshi Shimada ,  Ken Murayama ,  Shigeyuki Kobori ,  Kanji Kawakami

    发明人： Satoshi Shimada ,  Ken Murayama ,  Shigeyuki Kobori ,  Kanji Kawakami

    IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054 ,  G01L19/147 ,  Y10S73/04

    摘要： Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.

    摘要翻译： 提供一种具有半导体膜片的半导体型压力传感器，其中隔膜包括薄壁部分和至少一个厚壁部分中的至少一个，并且在其中限定形成在薄壁​​下方的隔膜的下表面中的凹部 零件，压阻元件放置在薄壁部分附近的隔膜的上表面上，并且支撑构件与隔膜的下表面的厚壁部分密封地接合，使得凹部被密封和限制，以便 当薄壁部分破裂时，防止高压液体吹走。