利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.027 秒)

    Method of fabricating backside illuminated image sensor
    1.
    发明授权
    Method of fabricating backside illuminated image sensor 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US07923344B2

    公开(公告)日：2011-04-12

    申请号：US12634080

    申请日：2009-12-09

    申请人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.

    摘要翻译： 提供了制造背面照明图像传感器的方法。 示例性方法可以包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成用于全局对准的第一对准标记; 形成用于在所述基板的前表面上的透明区域中精细对准的第二对准标记; 使用第一对准标记从背面对准基板; 以及在所述清除区域处去除所述基板的背面的一部分以定位所述第二对准标记。

    METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR
    3.
    发明申请
    METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    背景照明图像传感器的制作方法

    公开(公告)号：US20100087029A1

    公开(公告)日：2010-04-08

    申请号：US12634080

    申请日：2009-12-09

    申请人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.

    摘要翻译： 提供了制造背面照明图像传感器的方法。 示例性方法可以包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成用于全局对准的第一对准标记; 形成用于在所述基板的前表面上的透明区域中精细对准的第二对准标记; 使用第一对准标记从背面对准基板; 以及在所述清除区域处去除所述基板的背面的一部分以定位所述第二对准标记。

    Method of fabricating backside illuminated image sensor
    4.
    发明申请
    Method of fabricating backside illuminated image sensor 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US20070207566A1

    公开(公告)日：2007-09-06

    申请号：US11369054

    申请日：2006-03-06

    申请人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front surface of the substrate, thinning-down the semiconductor substrate from the back surface, clearing-out a region of the semiconductor substrate from the back surface that covers a fine alignment mark by performing registration from the back surface and using a global alignment mark as a reference, and processing the back surface of the substrate by performing registration from the back surface and using the fine alignment mark as a reference.

    摘要翻译： 制造背面照明图像传感器的方法包括提供具有前表面和后表面的半导体衬底，在衬底的前表面上提供多个晶体管，金属互连和金属焊盘，将支撑层粘合到前面 基板的表面，从背面减薄半导体基板，通过从后表面进行配准，从覆盖微细对准标记的背面清除半导体基板的区域，并使用全局对准标记作为 通过从后表面进行配准并使用精细对准标记作为参考来处理衬底的背面。

    Method of fabricating backside illuminated image sensor
    5.
    发明授权
    Method of fabricating backside illuminated image sensor 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US07648851B2

    公开(公告)日：2010-01-19

    申请号：US11369054

    申请日：2006-03-06

    申请人： Shih-Chu Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chu Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front surface of the substrate, thinning-down the semiconductor substrate from the back surface, clearing-out a region of the semiconductor substrate from the back surface that covers a fine alignment mark by performing registration from the back surface and using a global alignment mark as a reference, and processing the back surface of the substrate by performing registration from the back surface and using the fine alignment mark as a reference.

    摘要翻译： 制造背面照明图像传感器的方法包括提供具有前表面和后表面的半导体衬底，在衬底的前表面上提供多个晶体管，金属互连和金属焊盘，将支撑层粘合到前面 基板的表面，从背面减薄半导体基板，通过从后表面进行配准，从覆盖微细对准标记的背面清除半导体基板的区域，并使用全局对准标记作为 通过从后表面进行配准并使用精细对准标记作为参考来处理衬底的背面。

    Lens structures suitable for use in image sensors and method for making the same
    9.
    发明授权
    Lens structures suitable for use in image sensors and method for making the same 有权
    适用于图像传感器的镜头结构及其制作方法

    公开(公告)号：US07443005B2

    公开(公告)日：2008-10-28

    申请号：US10982978

    申请日：2004-11-05

    申请人： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Hsien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

    发明人： Ching-Sen Kuo ,  Feng-Jia Shiu ,  Gwo-Yuh Shiau ,  Jieh-Jang Chen ,  Shih-Chi Fu ,  Chien Hsien Tseng ,  Chia-Shiung Tsai ,  Yuan-Hung Liu ,  Yeur-Luen Tu ,  Chih-Ta Wu ,  Chi-Hsin Lo

    IPC分类号： H01L29/78

    CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

    摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.

    摘要翻译： 图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。 内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。 内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。 可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。 热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。 感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

    Method of measurement in semiconductor fabrication
    10.
    发明授权
    Method of measurement in semiconductor fabrication 有权
    半导体制造中的测量方法

    公开(公告)号：US08178422B2

    公开(公告)日：2012-05-15

    申请号：US12415005

    申请日：2009-03-31

    申请人： Alex Hsu ,  Shih-Chi Fu ,  Feng-Jia Shiu ,  Chia-Shiung Tsai

    发明人： Alex Hsu ,  Shih-Chi Fu ,  Feng-Jia Shiu ,  Chia-Shiung Tsai

    IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L23/544

    CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/7088

    摘要： Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side and a back side, the device substrate having a first refractive index, forming an embedded target over the front side of the device substrate, forming a reflective layer over the embedded target, forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index, and projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括提供具有前侧和后侧的器件衬底，器件衬底具有第一折射率，在器件衬底的前侧上形成嵌入的靶，在嵌入的靶上形成反射层，形成介质 所述介质层具有小于所述第一折射率的第二折射率，并且从所述背面将辐射从所述介质层和所述器件基板突出以使得所述嵌入的靶被检测为半导体 处理。