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240 条记录 (耗时 0.039 秒)

    Platen for retaining polishing material
    1.
    发明授权
    Platen for retaining polishing material 有权
    压板用于保留抛光材料

    公开(公告)号：US06592439B1

    公开(公告)日：2003-07-15

    申请号：US09709769

    申请日：2000-11-10

    申请人： Shijian Li ,  Manoocher Birang ,  Ramin Emami ,  Andrew Nagengast ,  Douglas Orcutt Brown ,  Shi-Ping Wang ,  Martin Scales ,  John White

    发明人： Shijian Li ,  Manoocher Birang ,  Ramin Emami ,  Andrew Nagengast ,  Douglas Orcutt Brown ,  Shi-Ping Wang ,  Martin Scales ,  John White

    IPC分类号： B24B2900

    CPC分类号： B25B11/005 ,  B24B21/04 ,  B24B37/16 ,  H01L21/30625

    摘要： Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

    摘要翻译： 通常，提供了用于保持抛光材料的方法和装置。 在一个实施例中，该装置包括具有顶表面，多个通道和一个或多个真空端口的压板。 顶表面适于支撑抛光材料。 多个通道形成在顶表面的抛光区域中。 真空端口设置在压板中，并且至少一个端口与至少一个通道连通。 当向端口施加真空时，通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

    Platen arrangement for a chemical-mechanical planarization apparatus
    2.
    发明授权
    Platen arrangement for a chemical-mechanical planarization apparatus 失效
    用于化学机械平面化装置的压板装置

    公开(公告)号：US06485359B1

    公开(公告)日：2002-11-26

    申请号：US09663815

    申请日：2000-09-15

    申请人： Shijian Li ,  Fred C. Redeker ,  John White ,  Manoocher Birang

    发明人： Shijian Li ,  Fred C. Redeker ,  John White ,  Manoocher Birang

    IPC分类号： B24B2900

    CPC分类号： B24B7/228 ,  B24B55/02 ,  B24D9/085

    摘要： A chemical mechanical polishing machine is provided with a platen that has an integral sub-pad. A fixed abrasive polishing layer is mounted, without adhesive between the polishing layer and the sub-pad, to the top surface of the platen and the sub-pad. The polishing layer is vacuum mounted, for example, to the integral sub-pad of the platen. A cooling arrangement is provided in the platen that cools the polishing layer and improves product quality.

    摘要翻译： 化学机械抛光机设置有具有整体子垫的压板。 将固定的研磨抛光层安装到抛光层和子焊盘之间，而不需要在压板和子焊盘的顶表面上。 抛光层例如被真空安装到压板的整体子垫上。 在压板中设置冷却装置，其冷却抛光层并提高产品质量。

    High through-put Cu CMP with significantly reduced erosion and dishing
    3.
    发明授权
    High through-put Cu CMP with significantly reduced erosion and dishing 失效
    高通量Cu CMP具有显着减少的侵蚀和凹陷

    公开(公告)号：US07041599B1

    公开(公告)日：2006-05-09

    申请号：US09469709

    申请日：1999-12-21

    申请人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

    发明人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

    IPC分类号： H01L21/302

    CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/3212

    摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.

    摘要翻译： 通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。 沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。 本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。 实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。 实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

    Conditioning fixed abrasive articles
    4.
    发明授权
    Conditioning fixed abrasive articles 有权
    调理固定磨料制品

    公开(公告)号：US06322427B1

    公开(公告)日：2001-11-27

    申请号：US09302530

    申请日：1999-04-30

    申请人： Shijian Li ,  Sidney Huey ,  Ramin Emami ,  Fritz Redeker ,  John White

    发明人： Shijian Li ,  Sidney Huey ,  Ramin Emami ,  Fritz Redeker ,  John White

    IPC分类号： B24B100

    CPC分类号： B24B53/017 ,  B24B37/042

    摘要： The useful lifetime of a fixed abrasive article is extended and wafer-to-wafer uniformity enhanced by preconditioning a fixed abrasive element and/or periodic conditioning after initial wafer polishing. Embodiments include preconditioning by forced removal of an upper binder-rich portion of the fixed abrasive elements to expose abrasive particles having a similar concentration as the bulk concentration at about one half the height of the elements. Embodiments further include periodic conditioning after initial wafer polishing by forced removal of an upper portion of the fixed abrasive elements.

    摘要翻译： 固定磨料制品的使用寿命延长，并且通过预先固定研磨元件和/或在初始晶片抛光之后进行周期性调节来提高晶片到晶片的均匀性。 实施例包括通过强制去除固定研磨元件的上部粘结剂丰富部分来预处理，以使具有与元件高度的大约一半高度的体积浓度相似的浓度的磨料颗粒暴露。 实施例还包括通过强制去除固定研磨元件的上部的初始晶片抛光之后的周期性调节。

    Vibration damping in chemical mechanical polishing system
    5.
    发明申请
    Vibration damping in chemical mechanical polishing system 失效
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US20060148387A1

    公开(公告)日：2006-07-06

    申请号：US11333992

    申请日：2006-01-17

    申请人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

    发明人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

    IPC分类号： B24B29/00

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Method of initiating cooper CMP process
    9.
    发明授权
    Method of initiating cooper CMP process 失效
    启动联合CMP过程的方法

    公开(公告)号：US06541384B1

    公开(公告)日：2003-04-01

    申请号：US09657391

    申请日：2000-09-08

    申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  John White

    发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  John White

    IPC分类号： H01L2100

    CPC分类号： C09G1/02

    摘要： The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.

    摘要翻译： 本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。 化学机械抛光组合物包括氧化剂和铜（II）化合物。 组合物任选地包括一种或多种以下化合物类型：络合剂; 腐蚀抑制剂; 酸; 和磨料。 在一个实施方案中，氧化剂是过氧化氢，硝酸铁或碘酸盐。 在另一个实施方案中，铜（II）化合物是CuSO 4。 化学机械抛光方法包括使用包含氧化剂和铜（II）化合物的组合物抛光铜层的步骤。 组合物以各种方式形成。 在一个实施方案中，其通过将铜（II）化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。 在另一个实施方案中，其通过在去离子水中将含有铜（II）化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。