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    Vibration damping in chemical mechanical polishing system
    2.
    发明申请
    Vibration damping in chemical mechanical polishing system 失效
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US20060148387A1

    公开(公告)日：2006-07-06

    申请号：US11333992

    申请日：2006-01-17

    申请人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

    发明人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

    IPC分类号： B24B29/00

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

    Platen for retaining polishing material
    4.
    发明授权
    Platen for retaining polishing material 有权
    压板用于保留抛光材料

    公开(公告)号：US06592439B1

    公开(公告)日：2003-07-15

    申请号：US09709769

    申请日：2000-11-10

    申请人： Shijian Li ,  Manoocher Birang ,  Ramin Emami ,  Andrew Nagengast ,  Douglas Orcutt Brown ,  Shi-Ping Wang ,  Martin Scales ,  John White

    发明人： Shijian Li ,  Manoocher Birang ,  Ramin Emami ,  Andrew Nagengast ,  Douglas Orcutt Brown ,  Shi-Ping Wang ,  Martin Scales ,  John White

    IPC分类号： B24B2900

    CPC分类号： B25B11/005 ,  B24B21/04 ,  B24B37/16 ,  H01L21/30625

    摘要： Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

    摘要翻译： 通常，提供了用于保持抛光材料的方法和装置。 在一个实施例中，该装置包括具有顶表面，多个通道和一个或多个真空端口的压板。 顶表面适于支撑抛光材料。 多个通道形成在顶表面的抛光区域中。 真空端口设置在压板中，并且至少一个端口与至少一个通道连通。 当向端口施加真空时，通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

    High through-put Cu CMP with significantly reduced erosion and dishing
    5.
    发明授权
    High through-put Cu CMP with significantly reduced erosion and dishing 失效
    高通量Cu CMP具有显着减少的侵蚀和凹陷

    公开(公告)号：US07041599B1

    公开(公告)日：2006-05-09

    申请号：US09469709

    申请日：1999-12-21

    申请人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

    发明人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

    IPC分类号： H01L21/302

    CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/3212

    摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.

    摘要翻译： 通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。 沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。 本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。 实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。 实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

    Conditioning fixed abrasive articles
    6.
    发明授权
    Conditioning fixed abrasive articles 有权
    调理固定磨料制品

    公开(公告)号：US06322427B1

    公开(公告)日：2001-11-27

    申请号：US09302530

    申请日：1999-04-30

    申请人： Shijian Li ,  Sidney Huey ,  Ramin Emami ,  Fritz Redeker ,  John White

    发明人： Shijian Li ,  Sidney Huey ,  Ramin Emami ,  Fritz Redeker ,  John White

    IPC分类号： B24B100

    CPC分类号： B24B53/017 ,  B24B37/042

    摘要： The useful lifetime of a fixed abrasive article is extended and wafer-to-wafer uniformity enhanced by preconditioning a fixed abrasive element and/or periodic conditioning after initial wafer polishing. Embodiments include preconditioning by forced removal of an upper binder-rich portion of the fixed abrasive elements to expose abrasive particles having a similar concentration as the bulk concentration at about one half the height of the elements. Embodiments further include periodic conditioning after initial wafer polishing by forced removal of an upper portion of the fixed abrasive elements.

    摘要翻译： 固定磨料制品的使用寿命延长，并且通过预先固定研磨元件和/或在初始晶片抛光之后进行周期性调节来提高晶片到晶片的均匀性。 实施例包括通过强制去除固定研磨元件的上部粘结剂丰富部分来预处理，以使具有与元件高度的大约一半高度的体积浓度相似的浓度的磨料颗粒暴露。 实施例还包括通过强制去除固定研磨元件的上部的初始晶片抛光之后的周期性调节。

    Vibration damping in chemical mechanical polishing system
    7.
    发明授权
    Vibration damping in chemical mechanical polishing system 失效
    化学机械抛光系统中的振动阻尼

    公开(公告)号：US07331847B2

    公开(公告)日：2008-02-19

    申请号：US11333992

    申请日：2006-01-17

    申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

    IPC分类号： B24B7/00 ,  B24B9/00

    CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

    摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 抛光台包括压板，安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。 振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。

    Thermal preconditioning fixed abrasive articles
    8.
    发明授权
    Thermal preconditioning fixed abrasive articles 失效
    热预处理固定磨料制品

    公开(公告)号：US06832948B1

    公开(公告)日：2004-12-21

    申请号：US09454354

    申请日：1999-12-03

    申请人： Manoocher Birang ,  Ramin Emami ,  Shijian Li ,  Fred C. Redeker

    发明人： Manoocher Birang ,  Ramin Emami ,  Shijian Li ,  Fred C. Redeker

    IPC分类号： B24B100

    CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/245

    摘要： The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

    摘要翻译： 固定磨料制品的CMP去除率增加，并且通过热预处理提高了晶片到晶片的均匀性。 实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品，以增加和稳定Cu或Cu合金CMP去除速率。

    Barrier layer buffing after Cu CMP
    9.
    发明授权
    Barrier layer buffing after Cu CMP 失效
    Cu CMP后的阻隔层抛光

    公开(公告)号：US06656842B2

    公开(公告)日：2003-12-02

    申请号：US09401643

    申请日：1999-09-22

    申请人： Shijian Li ,  Fred C. Redeker ,  Ramin Emami ,  Sen-Hou Ko ,  John M. White

    发明人： Shijian Li ,  Fred C. Redeker ,  Ramin Emami ,  Sen-Hou Ko ,  John M. White

    IPC分类号： H01L21302

    CPC分类号： H01L21/3212

    摘要： Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.

    摘要翻译： 首先通过CMP去除沉积的Cu，固定的研磨抛光垫停止在阻挡层上，例如Ta或TaN上。 然后相对于Cu：Ta或TaN和Cu：氧化硅选择性地进行抛光以去除阻挡层并将凹陷控制在不大于100埃。