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公开(公告)号：US06982468B2
公开(公告)日：2006-01-03
申请号：US10942014
申请日：2004-09-16
IPC分类号： H01L29/76
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且去除引入氮的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面
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公开(公告)号：US06897104B2
公开(公告)日：2005-05-24
申请号：US10452126
申请日：2003-06-03
IPC分类号： H01L21/316 , H01L21/318 , H01L21/8234 , H01L27/088 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且移除氮导入的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面。
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公开(公告)号：US20050029600A1
公开(公告)日：2005-02-10
申请号：US10942014
申请日：2004-09-16
IPC分类号： H01L21/316 , H01L21/318 , H01L21/8234 , H01L27/088 , H01L21/44 , H01L21/8238 , H01L29/76 , H01L31/062 , H01L31/119
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且去除引入氮的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面
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公开(公告)号：US07196384B2
公开(公告)日：2007-03-27
申请号：US11271962
申请日：2005-11-14
IPC分类号： H01L31/00
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且移除氮导入的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面。
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公开(公告)号：US20060068561A1
公开(公告)日：2006-03-30
申请号：US11271962
申请日：2005-11-14
IPC分类号： H01L21/76
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
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6.发明授权公开(公告)号：US09223235B2
公开(公告)日：2015-12-29
申请号：US14111446
申请日：2012-04-11
IPC分类号： B42D15/00 , G03G9/08 , B41M3/14 , G02B5/32 , G03G21/04 , C09D11/03 , C09D11/50 , B42D25/29 , B42D25/00 , B42D25/324 , B42D25/328
CPC分类号： B42D25/378 , B41M3/14 , B42D25/00 , B42D25/29 , B42D25/324 , B42D25/328 , B42D25/36 , B42D25/373 , B42D25/382 , B42D25/387 , B42D25/455 , B42D25/46 , B42D25/47 , B42D2033/20 , B42D2033/24 , B42D2035/30 , C09D11/03 , C09D11/50 , G02B5/32 , G03G9/08 , G03G9/0802 , G03G21/04
摘要： A main object of the present invention is to provide fine particles, a particle group, an anti-counterfeiting ink, an anti-counterfeiting toner, an anti-counterfeiting sheet, and an anti-counterfeiting medium enabling to achieve a high level of authentication. The object of the present invention is achieved by providing the fine particle comprising an identification information group including multiple types of identification information identifiable by magnification, characterized in that the identification information group includes first identification information and second identification information which cannot be identified at any magnifying power capable of identifying the first identification information.
摘要翻译： 本发明的主要目的是提供能够实现高水平认证的细颗粒，颗粒组，防伪油墨，防伪调色剂，防伪纸和防伪介质。 本发明的目的是通过提供包括识别信息组的精细粒子来实现，所述识别信息组包括通过放大倍数识别的多种类型的识别信息，其特征在于，所述识别信息组包括第一识别信息和在任何放大 能够识别第一识别信息的电力。
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7.发明授权Fabrication process of multi-image type hologram, and multi-image type hologram fabricated by that process 有权多图像全息图的制作工艺，以及通过该工艺制造的多图像型全息图公开(公告)号：US09001401B2
公开(公告)日：2015-04-07
申请号：US11608097
申请日：2006-12-07
申请人： Tsuyoshi Yamauchi , Masachika Watanabe , Tomoko Kumasawa , Makio Kurashige , Akiko Kitamura , Mitsuru Kitamura , Kenji Ueda
发明人： Tsuyoshi Yamauchi , Masachika Watanabe , Tomoko Kumasawa , Makio Kurashige , Akiko Kitamura , Mitsuru Kitamura , Kenji Ueda
CPC分类号： G03H1/26 , G03H1/0248 , G03H1/2249 , G03H1/2645 , G03H1/265 , G03H2001/2273 , G03H2210/30
摘要： A process by which a multi-image type hologram, wherein one 3D image changes over to another depending on a viewing direction, can be fabricated in a simple construction, and a multi-image type hologram fabricated by that process. According to the process for the fabrication of a multi-image type hologram wherein one image changes over to another depending on a viewing direction, the area of a hologram recording material is divided into a plurality of sub-areas. Objects to be displayed on different images are holographically recorded in the respective sub-areas, using reference light having the same angle of incidence, images recorded in the respective sub-areas are simultaneously reconstructed from the recorded first-stage hologram, so that a second-stage hologram recording material is located near the reconstructed object images for recording them as a reflection or transmission type volume hologram.
摘要翻译： 可以以简单的结构制造其中一个3D图像根据观看方向转换到另一个3D图像的多图像类型全息图的过程，以及通过该处理制造的多图像型全息图。 根据制造多图像型全息图的方法，其中一个图像根据观察方向转换到另一个图像，全息图记录材料的面积被分成多个子区域。 将要显示在不同图像上的对象全息地记录在各个子区域中，使用具有相同入射角的参考光，从记录的第一级全息图同时重建记录在各个子区域中的图像，使得第二 台阶全息图记录材料位于重建对象图像附近，用于将它们记录为反射或透射型体积全息图。
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公开(公告)号：US20090235490A1
公开(公告)日：2009-09-24
申请号：US12480869
申请日：2009-06-09
申请人： Naho Kurokawa , Tsuyoshi Yamauchi
发明人： Naho Kurokawa , Tsuyoshi Yamauchi
IPC分类号： E05D11/10
CPC分类号： H04N1/00554 , H04N1/00519 , H04N1/10 , Y10T16/5404
摘要： To provide a technology which facilitates an operation for placing a document with a larger size than a size of a document table, on the document table. A document cover is positioned at a plurality of open positions to a document table. A pivot of a document table 2 and a hinge 7 is configured by two pivots A1, A2, and a constricted portion 1b and it is configured in such a manner that, in case of setting a document with a smaller size than that of the document table 2, the pivot A2 is pivoted at a convex portion 7a of the hinge 7, and in case of setting a document with a larger size than that of the document table 2, the convex portion 7a is moved to the pivot Al side through the constricted portion 1b, and the pivot A1 is pivoted at the convex portion 7a.
摘要翻译： 提供一种便于将文档的大小大于文档表的文档放置在文档表上的操作的技术。 文档盖位于文档台的多个打开位置。 文件台2和铰链7的枢轴由两个枢轴A1，A2和缩颈部分1b构成，并且以如下方式配置：在设置尺寸小于文件尺寸的文件的情况下 如图2所示，枢轴A2在铰链7的凸部7a处枢转，并且在设置具有比文件台2大的尺寸的文件的情况下，凸部7a通过 收缩部分1b，并且枢轴A1在凸部7a处枢转。
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9.发明申请FABRICATION PROCESS FOR CHOLESTERIC LIQUID CRYSTAL MEDIA HAVING A VOLUME HOLOGRAM 有权具有体积HOLOGRAM的液晶液晶的制造工艺公开(公告)号：US20090219592A1
公开(公告)日：2009-09-03
申请号：US12436993
申请日：2009-05-07
IPC分类号： G03H1/08
CPC分类号： B42D25/47 , B42D25/328 , B42D25/364 , B42D25/455 , B42D2033/26 , G03H1/02 , G03H1/0248 , G03H1/0256 , G03H2001/0016 , G03H2250/10 , G03H2250/38 , G03H2250/41 , G03H2250/42
摘要： The invention provides a process capable of fabricating a cholesteric liquid crystal medium having a volume hologram with efficiency yet without recourse to complicated steps such as an alignment step. This is achievable as follows. A volume hologram layer is formed on a substrate, and a cholesteric liquid crystal layer is then formed on another substrate comprising a center substrate film that is subjected to bondable treatment. The volume hologram layer is applied to the center substrate film that is subjected to bondable treatment, and placed in a state where the volume hologram layer and cholesteric liquid crystal layer are laminated together via the substrate. The substrate is peeled off the volume hologram layer, and an adhesive layer is formed on the surface of the volume hologram layer off which the substrate is peeled off, followed by the provision of the substrate on the adhesive layer. Finally, the multilayer structure is shaped into a label form of cholesteric liquid crystal medium having a volume hologram layer.
摘要翻译： 本发明提供一种能够制造具有体积全息图的胆甾醇型液晶介质的方法，其效率尚未依赖于诸如对准步骤的复杂步骤。 这是可以实现的如下。 在基板上形成体积全息图层，然后在包含可进行可焊接处理的中心基板膜的另一基板上形成胆甾醇型液晶层。 将体积全息图层施加到经受可粘合处理的中心基底膜上，并且将其放置在体积全息图层和胆甾醇型液晶层经由基板层压在一起的状态。 将基板从体积全息图层剥离，并且在剥离基板的体积全息图层的表面上形成粘合剂层，然后在粘合剂层上设置基板。 最后，将多层结构成形为具有体积全息图层的胆甾型液晶介质的标签形式。
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公开(公告)号：US07557967B2
公开(公告)日：2009-07-07
申请号：US12098066
申请日：2008-04-04
申请人： Mitsuru Amimoto , Tsuyoshi Yamauchi
发明人： Mitsuru Amimoto , Tsuyoshi Yamauchi
IPC分类号： H04N1/04
CPC分类号： H04N1/1013 , H04N1/193 , H04N2201/0408 , H04N2201/0418 , H04N2201/0446
摘要： To set at least the main portion of a read original on an image reading apparatus while avoiding a discontinuous portion, the position of the discontinuous portion of photoelectric conversion element arrays is indicated, or an original holder to be used to set the original while avoiding the discontinuous portion is arranged.
摘要翻译： 为了在图像读取装置中至少设置读取原稿的主要部分，同时避免不连续部分，指示光电转换元件阵列的不连续部分的位置，或用于设置原稿的原始保持器，同时避免 布置不连续部分。
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