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公开(公告)号：US06982468B2
公开(公告)日：2006-01-03
申请号：US10942014
申请日：2004-09-16
IPC分类号： H01L29/76
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且去除引入氮的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面
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公开(公告)号：US06897104B2
公开(公告)日：2005-05-24
申请号：US10452126
申请日：2003-06-03
IPC分类号： H01L21/316 , H01L21/318 , H01L21/8234 , H01L27/088 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且移除氮导入的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面。
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公开(公告)号：US20050029600A1
公开(公告)日：2005-02-10
申请号：US10942014
申请日：2004-09-16
IPC分类号： H01L21/316 , H01L21/318 , H01L21/8234 , H01L27/088 , H01L21/44 , H01L21/8238 , H01L29/76 , H01L31/062 , H01L31/119
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且去除引入氮的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面
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公开(公告)号：US07196384B2
公开(公告)日：2007-03-27
申请号：US11271962
申请日：2005-11-14
IPC分类号： H01L31/00
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
摘要翻译： 一种半导体器件及其制造方法，其选择性地形成氮化硅膜，而不会对硅衬底的表面造成损害或污染，从而在一个相同的硅衬底中形成不同类型的栅极电介质，通过在二氧化硅上形成二氧化硅 硅衬底的表面，然后去除其一部分，在已经除去二氧化硅的衬底的表面上形成氮化硅膜，同时将氮引入二氧化硅的不是 去除或者通过化学气相沉积在硅衬底的表面上沉积二氧化硅，然后去除其一部分，在去除二氧化硅的衬底的表面上形成氮化硅膜，同时 将氮气引入未被除去的二氧化硅的表面，依次溶解 并且移除氮导入的氧化硅膜以暴露衬底的表面并氧化硅衬底和氮化硅膜的暴露表面。
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公开(公告)号：US20060068561A1
公开(公告)日：2006-03-30
申请号：US11271962
申请日：2005-11-14
IPC分类号： H01L21/76
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
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公开(公告)号：US06656804B2
公开(公告)日：2003-12-02
申请号：US09894132
申请日：2001-06-29
IPC分类号： H01L21336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/511 , H01L29/513 , H01L29/518
摘要： The present invention provides a MOS semiconductor device which enables gate leakage current reduction with a thinner gate dielectric film for higher speed, and a production method thereof. According to the present invention, a gate dielectric film 6 is made as follows: after forming a silicon nitride film 3 with a specified thickness, it is annealed in an oxidizing atmosphere to form silicon oxide 4 on the silicon nitride film 3, then this silicon oxide 4 is completely removed by exposure to a dissolving liquid. As a result, at depths between 0.12 nm and 0.5 nm from the top surface of the silicon nitride film 3 in the gate dielectric film 6 whose main constituent elements are silicon, nitrogen and oxygen, the nitrogen concentration is higher than the oxygen concentration. This enables the use of a thinner gate dielectric film with silicon, nitrogen and oxygen as main constituent elements while at the same time realizing reduction in leakage currents.
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公开(公告)号：US06849513B2
公开(公告)日：2005-02-01
申请号：US10683387
申请日：2003-10-14
IPC分类号： H01L29/78 , H01L21/28 , H01L29/51 , H01L21/336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/511 , H01L29/513 , H01L29/518
摘要： The present invention provides a MOS semiconductor device which enables gate leakage current reduction with a thinner gate dielectric film for higher speed, and a production method thereof. According to the present invention, a gate dielectric film 6 is made as follows: after forming a silicon nitride film 3 with a specified thickness, it is annealed in an oxidizing atmosphere to form silicon oxide 4 on the silicon nitride film 3, then this silicon oxide 4 is completely removed by exposure to a dissolving liquid. As a result, at depths between 0.12 nm and 0.5 nm from the top surface of the silicon nitride film 3 in the gate dielectric film 6 whose main constituent elements are silicon, nitrogen and oxygen, the nitrogen concentration is higher than the oxygen concentration. This enables the use of a thinner gate dielectric film with silicon, nitrogen and oxygen as main constituent elements while at the same time realizing reduction in leakage currents.
摘要翻译： 本发明提供一种能够通过较薄栅极电介质膜进行栅极泄漏电流降低的MOS半导体器件及其制造方法。 根据本发明，栅电介质膜6如下制作：在形成规定厚度的氮化硅膜3之后，在氧化气氛中进行退火，在氮化硅膜3上形成氧化硅4， 氧化物4通过暴露于溶解液而完全除去。 结果，在主要构成元素为硅，氮和氧的栅极电介质膜6中，距离氮化硅膜3的顶表面在0.12nm至0.5nm之间的深度处，氮浓度高于氧浓度。 这使得能够使用具有硅，氮和氧作为主要构成元件的较薄的栅极电介质膜，同时实现漏电流的减小。
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公开(公告)号：US06777296B2
公开(公告)日：2004-08-17
申请号：US10321501
申请日：2002-12-18
IPC分类号： H01L21336
CPC分类号： H01L21/28185 , H01L21/02186 , H01L21/02189 , H01L21/02274 , H01L21/02337 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： Disclosed is a method of improving smoothness on a surface of a gate dielectric composed of a high dielectric film made of metal oxide. A dielectric film with a high permittivity made of metal oxide such as a TiO2 film or a ZrO2 film having an amorphous structure is deposited over a silicon substrate by the plasma enhanced chemical vapor deposition method, and the film is used as a gate dielectric. Since the gate dielectric has good surface smoothness, simultaneous reductions of both the film thickness of a gate dielectric and the gate leakage current can be achieved. In addition, it is also possible to reduce the variation in the characteristics of the devices.
摘要翻译： 公开了一种提高由金属氧化物构成的高电介质膜构成的栅极电介质的表面的平滑度的方法。 通过等离子体增强化学气相沉积法在硅衬底上沉积具有由诸如TiO 2膜或具有无定形结构的ZrO 2膜的金属氧化物的高介电常数的介电膜，并且该膜用作栅极电介质。 由于栅极电介质具有良好的表面平滑度，因此可以实现栅极电介质的膜厚度和栅极漏电流的同时减小。 此外，还可以减小装置的特性的变化。
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9.发明授权Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device 有权CMOS型半导体器件的制造方法以及CMOS型半导体器件公开(公告)号：US07863125B2
公开(公告)日：2011-01-04
申请号：US12492648
申请日：2009-06-26
申请人： Shimpei Tsujikawa , Yasuhiko Akamatsu , Hiroshi Umeda , Jiro Yugami , Masaharu Mizutani , Masao Inoue , Junichi Tsuchimoto , Kouji Nomura
发明人： Shimpei Tsujikawa , Yasuhiko Akamatsu , Hiroshi Umeda , Jiro Yugami , Masaharu Mizutani , Masao Inoue , Junichi Tsuchimoto , Kouji Nomura
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857
摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要翻译： 在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命 提供了晶体管，而不降低nMOS晶体管的性能。 关于本发明的CMOS型半导体器件的制造方法具有以下工序。 卤素引入pMOS晶体管形成区域的半导体衬底。 接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。 接下来，将氮引入到栅极绝缘膜。
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10.发明授权Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device 有权CMOS型半导体器件的制造方法以及CMOS型半导体器件公开(公告)号：US07569890B2
公开(公告)日：2009-08-04
申请号：US11409081
申请日：2006-04-24
申请人： Shimpei Tsujikawa , Yasuhiko Akamatsu , Hiroshi Umeda , Jiro Yugami , Masaharu Mizutani , Masao Inoue , Junichi Tsuchimoto , Kouji Nomura
发明人： Shimpei Tsujikawa , Yasuhiko Akamatsu , Hiroshi Umeda , Jiro Yugami , Masaharu Mizutani , Masao Inoue , Junichi Tsuchimoto , Kouji Nomura
IPC分类号： H01L23/62
CPC分类号： H01L21/823857
摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered.The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要翻译： 在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命 提供了晶体管，而不降低nMOS晶体管的性能。 关于本发明的CMOS型半导体器件的制造方法具有以下工序。 卤素引入pMOS晶体管形成区域的半导体衬底。 接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。 接下来，将氮引入到栅极绝缘膜。
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