公开(公告)号：US08436366B2

公开(公告)日：2013-05-07

申请号：US13131369

申请日：2010-04-06

申请人： Shin Harada ,  Makoto Sasaki ,  Takeyoshi Masuda

发明人： Shin Harada ,  Makoto Sasaki ,  Takeyoshi Masuda

IPC分类号： H01L29/15 ,  H01L29/04

CPC分类号： H01L29/7802 ,  B24B7/17 ,  B24B7/228 ,  B24B37/08 ,  B24B37/10 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/02 ,  H01L29/045 ,  H01L29/063 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8128 ,  H01L29/8611 ,  H01L29/872

摘要： A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate according to the present invention has a main surface having a diameter of 2 inches or greater, a value for bow at the main surface being not smaller than −40 μm and not greater than −5 μm, and a value for warp at the main surface being not smaller than 5 μm and not greater than 40 μm. Preferably, a value for surface roughness Ra of the main surface of the substrate is not greater than 1 nm and a value for surface roughness Ra of a main surface is not greater than 100 nm.

摘要翻译： 获得由于基板的弯曲，具有薄膜的基板和形成有上述基板的半导体器件导致的半导体器件的加工精度的抑制劣化的基板以及上述制造半导体器件的方法。 根据本发明的基底具有直径为2英寸或更大的主表面，主表面的弓形值不小于-40μm且不大于-5μm，并且在该表面处的翘曲值 主表面不小于5μm，不大于40μm。 优选地，基板的主表面的表面粗糙度Ra的值不大于1nm，并且主表面的表面粗糙度Ra的值不大于100nm。

公开(公告)号：US20120168774A1

公开(公告)日：2012-07-05

申请号：US13395768

申请日：2011-05-19

申请人： Takeyoshi Masuda ,  Satomi Itoh ,  Shin Harada ,  Makoto Sasaki

发明人： Takeyoshi Masuda ,  Satomi Itoh ,  Shin Harada ,  Makoto Sasaki

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L21/187 ,  C30B29/36 ,  C30B33/06 ,  H01L29/1608

摘要： A silicon carbide substrate and a method for manufacturing the silicon carbide substrate are obtained, each of which achieves reduced manufacturing cost of semiconductor devices using the silicon carbide substrate. A method for manufacturing a SiC-combined substrate includes the steps of: preparing a plurality of single-crystal bodies each made of silicon carbide (SiC); forming a collected body; connecting the single-crystal bodies to each other; and slicing the collected body. In the step, the plurality of SiC single-crystal ingots are arranged with a silicon (Si) containing Si layer interposed therebetween, so as to form the collected body including the single-crystal bodies. In the step, adjacent SiC single-crystal ingots are connected to each other via at least a portion of the Si layer, the portion being formed into silicon carbide by heating the collected body. In step, the collected body in which the SiC single-crystal ingots are connected to each other is sliced.

摘要翻译： 获得碳化硅基板和制造碳化硅基板的方法，其中的每一个都降低了使用碳化硅基板的半导体器件的制造成本。 SiC复合衬底的制造方法包括以下步骤：制备由碳化硅（SiC）制成的多个单晶体; 形成收集体; 将单晶体体彼此连接; 并切片收集的身体。 在该步骤中，多个SiC单晶锭被布置成包含硅（Si）的Si层，以形成包括单晶体的收集体。 在该步骤中，相邻的SiC单晶锭通过Si层的至少一部分彼此连接，该部分通过加热收集体而形成为碳化硅。 在步骤中，将SiC单晶锭彼此连接的收集体切片。

公开(公告)号：US20120056202A1

公开(公告)日：2012-03-08

申请号：US13320247

申请日：2010-04-27

申请人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Makoto Sasaki ,  Taro Nishiguchi ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Makoto Sasaki ,  Taro Nishiguchi ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×1019 cm−3, and the SiC layer has an impurity concentration greater than 5×1018 cm−3 and smaller than 2×1019 cm−3.

摘要翻译： 一种MOSFET，其是在器件制造工艺中由于热处理而允许抑制堆垛层错而产生降低的导通电阻的半导体器件，包括：碳化硅衬底; 由单晶碳化硅构成的有源层，设置在碳化硅基板的一个主面上; 设置在有源层上的源极接触电极; 以及形成在碳化硅衬底的另一个主表面上的漏电极。 碳化硅基板包括：由碳化硅制成的基层; 以及由单晶碳化硅制成并设置在基底层上的SiC层。 此外，基底层的杂质浓度大于2×1019cm-3，并且SiC层的杂质浓度大于5×1018cm-3且小于2×1019cm-3。

公开(公告)号：US20120012862A1

公开(公告)日：2012-01-19

申请号：US13258801

申请日：2010-09-29

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/187 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate.

摘要翻译： 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 并且通过在基底基板和SiC基板之间形成由导电体的碳制成的中间层，将基底基板与SiC基板相互连接。

公开(公告)号：US20120025208A1

公开(公告)日：2012-02-02

申请号：US13258907

申请日：2010-09-29

申请人： Taro Nishiguchi ,  Takeyoshi Masuda ,  Makoto Sasaki ,  Shin Harada ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Taro Nishiguchi ,  Takeyoshi Masuda ,  Makoto Sasaki ,  Shin Harada ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： H01L29/161 ,  H01L21/762

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/187 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; forming a Si film made of silicon on a main surface of the base substrate; fabricating a stacked substrate by placing the SiC substrate on and in contact with the Si film; and connecting the base substrate and the SiC substrate to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate and a region making contact with the SiC substrate in the Si film.

摘要翻译： 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 在所述基底基板的主表面上形成由硅制成的Si膜; 通过将SiC衬底置于Si膜上并与其接触来制造堆叠衬底; 并且通过加热所述堆叠的基板将所述基底基板和所述SiC基板彼此连接，以将至少与所述基底基板接触的区域和与所述Si膜中的所述SiC基板接触的区域转化为碳化硅。

公开(公告)号：US20120126251A1

公开(公告)日：2012-05-24

申请号：US13388691

申请日：2011-02-25

申请人： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

发明人： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/2007 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate.

摘要翻译： 制造碳化硅衬底的方法降低了制造成本。 该方法包括以下步骤：制备基底和SiC衬底; 通过堆叠基底基板和SiC基板来制造堆叠的基板; 通过加热堆叠的基板来制造连接的基板; 通过加热连接的基板，在连接的基板的厚度方向上形成在连接界面处形成的空隙，使得基底基板的温度高于SiC基板的温度; 并且通过去除包括与SiC衬底相对的基底衬底的主表面的区域来去除空隙。

公开(公告)号：US20120056201A1

公开(公告)日：2012-03-08

申请号：US13320243

申请日：2010-04-27

申请人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Taro Nishiguchi ,  Makoto Sasaki ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Taro Nishiguchi ,  Makoto Sasaki ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L29/739

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n+ region, an emitter contact electrode, a gate oxide film, a gate electrode, and a collector electrode. The silicon carbide substrate includes: a base layer made of silicon carbide and having p type conductivity; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The base layer has a p type impurity concentration exceeding 1×1018 cm−3.

摘要翻译： IGBT是一种允许在抑制缺陷产生的同时降低导通电阻的垂直型IGBT，包括：碳化硅衬底，漂移层，阱区，n +区，发射极接触电极，栅极氧化膜 ，栅电极和集电极。 碳化硅基板包括：由碳化硅制成并具有p型导电性的基底层; 以及由单晶碳化硅制成并设置在基底层上的SiC层。 基极层的p型杂质浓度超过1×1018cm-3。

公开(公告)号：US20110233562A1

公开(公告)日：2011-09-29

申请号：US13131369

申请日：2010-04-06

申请人： Shin Harada ,  Makoto Sasaki ,  Takeyoshi Masuda

发明人： Shin Harada ,  Makoto Sasaki ,  Takeyoshi Masuda

IPC分类号： H01L29/161 ,  H01L21/20

CPC分类号： H01L29/7802 ,  B24B7/17 ,  B24B7/228 ,  B24B37/08 ,  B24B37/10 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/02 ,  H01L29/045 ,  H01L29/063 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8128 ,  H01L29/8611 ,  H01L29/872

摘要： A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate according to the present invention has a main surface having a diameter of 2 inches or greater, a value for bow at the main surface being not smaller than −40 μm and not greater than −5 μm, and a value for warp at the main surface being not smaller than 5 μm and not greater than 40 μm. Preferably, a value for surface roughness Ra of the main surface of the substrate is not greater than 1 nm and a value for surface roughness Ra of a main surface is not greater than 100 nm.

摘要翻译： 获得由于基板的弯曲，具有薄膜的基板和形成有上述基板的半导体器件导致的半导体器件的加工精度的抑制劣化的基板，以及上述制造半导体器件的方法。 根据本发明的基板具有直径为2英寸或更大的主表面，主表面上的弓形值不小于-40μm且不大于-5μm，并且在该表面处的翘曲值 主表面不小于5μm，不大于40μm。 优选地，基板的主表面的表面粗糙度Ra的值不大于1nm，并且主表面的表面粗糙度Ra的值不大于100nm。

公开(公告)号：US20110210342A1

公开(公告)日：2011-09-01

申请号：US13128438

申请日：2010-02-09

申请人： Makoto Sasaki ,  Takeyoshi Masuda

发明人： Makoto Sasaki ,  Takeyoshi Masuda

IPC分类号： H01L29/02 ,  B26D1/00

CPC分类号： H01L29/7802 ,  C30B29/36 ,  H01L23/544 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10T83/04 ,  H01L2924/00

摘要： A SiC substrate includes a first orientation flat parallel to the direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends.

摘要翻译： SiC衬底包括平行于<11-20>方向的第一取向平板和与第一取向平面相交的方向并且与第一取向平面不同的第二取向平面。 替代的SiC衬底具有矩形平面形状，并且衬底的主表面包括平行于<11-20>方向的第一侧，在垂直于第一侧的方向上的第二侧和连接第一侧的第三侧 一边到第二边 沿第一侧延伸的方向突出的第三侧的长度不同于沿第二侧延伸的方向突出的第三侧的长度。

公开(公告)号：US09070567B2

公开(公告)日：2015-06-30

申请号：US13128438

申请日：2010-02-09

申请人： Makoto Sasaki ,  Takeyoshi Masuda

发明人： Makoto Sasaki ,  Takeyoshi Masuda

IPC分类号： C30B21/02 ,  H01L29/06 ,  C30B29/36 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78 ,  H01L23/544 ,  H01L29/16

CPC分类号： H01L29/7802 ,  C30B29/36 ,  H01L23/544 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10T83/04 ,  H01L2924/00

摘要： A SiC substrate includes a first orientation flat parallel to the direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends.

摘要翻译： SiC衬底包括平行于<11-20>方向的第一取向平板和与第一取向平面相交的方向并且与第一取向平面不同的第二取向平面。 替代的SiC衬底具有矩形平面形状，并且衬底的主表面包括平行于<11-20>方向的第一侧，在垂直于第一侧的方向上的第二侧和连接第一侧的第三侧 一边到第二边 沿第一侧延伸的方向突出的第三侧的长度不同于沿第二侧延伸的方向突出的第三侧的长度。