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公开(公告)号：US20210189043A1
公开(公告)日：2021-06-24
申请号：US17111853
申请日：2020-12-04
IPC分类号： C08F283/04 , C09J151/08 , C08J5/24 , C08K3/36 , C08K9/06
摘要： Provided is a heat-curable resin composition capable of yielding a cured product that has a superior dielectric property and heat resistance and is thus useful for high-frequency purposes. Particularly, there are provided a composition containing the following components (A), (C) and (D); and a composition containing the following components (A) and (B). The components (A), (B), (C) and (D) are: (A) a cyclopentadiene compound represented by the following formula (1) and/or an oligomer(s) of the cyclopentadiene compound wherein R represents a group selected from an alkyl group, an alkenyl group and an aryl group, n represents an integer of 1 to 4, each of x1 and x2 independently represents 0, 1 or 2, provided that when R represents an alkyl group or an aryl group, x1 represents 1 or 2, and x1 and x2 satisfy 1≤x1+x2≤4; (B) a cyclic imide compound; (C) a curing accelerator; and (D) an inorganic filler.
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公开(公告)号：US20210002474A1
公开(公告)日：2021-01-07
申请号：US16913836
申请日：2020-06-26
发明人： Shoichi OSADA , Hiroki OISHI , Norifumi KAWAMURA , Kenji HAGIWARA , Ryuhei YOKOTA , Masahiro KANETA
IPC分类号： C08L63/00
摘要： Provided are an epoxy resin composition for semiconductor encapsulation; and a semiconductor device having a cured product of such composition. The composition has a superior curability, and a metal layer (plated layer) can be selectively and easily formed on the surface of or inside the cured product of this composition via an electroless plating treatment. The composition of the present invention contains: (A) an epoxy resin; (B) a phenolic curing agent; (C) a curing accelerator having a urea structure; (D) a laser direct structuring additive; and (E) an inorganic filler.
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公开(公告)号：US20230312909A1
公开(公告)日：2023-10-05
申请号：US18019283
申请日：2021-07-30
CPC分类号： C08L63/00 , C08K3/36 , C08K5/541 , H01L23/295 , H01L23/3142 , C08L2203/20
摘要： A thermosetting resin composition, including: a thermosetting resin; a laser direct structuring additive; an inorganic filler; and a coupling agent, wherein the coupling agent contains one or more selected from the group consisting of a triazine functional group-, isocyanate functional group-, isocyanuric acid functional group-, benzotriazole functional group-, acid anhydride functional group-, azasilacyclopentane functional group-, imidazole functional group-, and unsaturated group-containing-silane coupling agent, and is not a mercaptosilane coupling agent, an amino silane coupling agent, or an epoxy silane coupling agent.
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公开(公告)号：US20180334567A1
公开(公告)日：2018-11-22
申请号：US15971019
申请日：2018-05-04
发明人： Norifumi KAWAMURA , Shoichi OSADA , Kohei OTAKE
CPC分类号： C08L83/10 , C08G59/1433 , C08G59/1494 , C08G59/4085 , C08G77/42 , C08K5/0041 , C08L2203/20
摘要： The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.
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5.发明申请SEMICONDUCTOR ENCAPSULATION RESIN COMPOSITION AND SEMICONDUCTOR DEVICE COMPRISED OF CURED PRODUCT OF THE SEMICONDUCTOR ENCAPSULATION RESIN COMPOSITION 有权半导体封装树脂组合物和半导体器件包含半导体封装树脂组合物固化产物的半导体封装公开(公告)号：US20160336246A1
公开(公告)日：2016-11-17
申请号：US15133547
申请日：2016-04-20
发明人： Shoichi OSADA , Naoyuki KUSHIHARA , Ryuhei YOKOTA
IPC分类号： H01L23/29 , H01L23/31 , H01L23/495 , C09D179/00
CPC分类号： H01L23/293 , C08G8/04 , C08G73/0655 , C08G77/50 , C08K5/55 , C08L61/06 , C08L63/00 , C08L79/04 , C08L83/10 , C09D161/06 , C09D179/00 , C09D179/04 , H01L23/296 , H01L23/3107 , H01L23/49582 , H01L29/1608 , H01L29/2003
摘要： Provided is a semiconductor encapsulation resin composition exhibiting an insignificant heat decomposition when left under a high temperature of 200 to 250° C. for a long period of time; and a superior reliability and adhesion to a Cu LF and Ag plating under a high-temperature and high-humidity environment. The composition comprises: (A) a cyanate ester compound having not less than two cyanato groups in one molecule; (B) a phenolic compound; (C) at least one epoxy resin; (D) a copolymer obtained by a hydrosilylation reaction of an alkenyl group-containing epoxy compound and an organopolysiloxane; and (E) at least one compound selected from a tetraphenylborate salt of a tetra-substituted phosphonium compound and a tetraphenylborate salt. A molar ratio of phenolic hydroxyl groups in (B) to cyanato groups in (A) is 0.08 to 0.25, and a molar ratio of epoxy groups in (C) and (D) to cyanato groups in (A) is 0.04 to 0.25.
摘要翻译： （A）中（B）与氰酸基之间的酚羟基的摩尔比为0.08〜0.25，（A）中（C）和（D）中的环氧基与氰酸基的摩尔比为0.04〜0.25。
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公开(公告)号：US20220372274A1
公开(公告)日：2022-11-24
申请号：US17734325
申请日：2022-05-02
摘要： Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150° C. and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.
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公开(公告)号：US20190144704A1
公开(公告)日：2019-05-16
申请号：US16168005
申请日：2018-10-23
发明人： Norifumi KAWAMURA , Shoichi OSADA
摘要： The invention provides a silicone-modified epoxy resin composition comprising a silicone-modified epoxy resin having at least two epoxy groups, obtained from hydrosilylation reaction of an alkenyl-containing epoxy compound with an organopolysiloxane, a silicone-modified phenolic resin having at least two phenolic hydroxyl groups, obtained from hydrosilylation reaction of an alkenyl-containing phenol compound with an organopolysiloxane, black pigment, and an inorganic filler. Because of excellent tracking resistance, the epoxy resin composition is suited for encapsulating semiconductor devices.
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8.发明申请PREPREG, METAL-CLAD LAMINATE, PRINTED WIRING BOARD, AND SEMICONDUCTOR DEVICE 有权PREPREG，金属层压板，印刷电路板和半导体器件公开(公告)号：US20130088842A1
公开(公告)日：2013-04-11
申请号：US13646266
申请日：2012-10-05
发明人： Shoichi OSADA
CPC分类号： B32B15/08 , B32B15/14 , B32B2260/023 , B32B2260/046 , B32B2305/076 , B32B2457/08 , C08J5/10 , C08J5/24 , C08J2363/00 , C08K3/22 , C08K3/24 , C08K3/26 , C08K7/14 , C08K2003/221 , C08L63/00 , H01L24/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2924/00014 , H01L2924/181 , H01L2224/48 , H01L2924/00015 , H01L2924/00
摘要： A prepreg that yields a semiconductor device which, even when using Cu wire, exhibits excellent reliability under conditions of high temperature and high humidity (heat-resistant and moisture-resistant reliability), a metal-clad laminate and a printed wiring board that use the prepreg, and a semiconductor device that uses the printed wiring board. Specifically disclosed are a prepreg comprising a substrate and a B-staged resin composition comprising (a) a thermosetting resin, (b) a hydrotalcite compound having a specific composition, (c) zinc molybdate, and (d) lanthanum oxide.
摘要翻译： 产生半导体器件的预浸料，即使使用Cu线，在高温高湿（耐热，耐湿可靠性）的条件下也显示出良好的可靠性，覆盖金属箔的层压板和印刷电路板使用 预浸料，以及使用印刷电路板的半导体装置。 具体公开了包含基材和B阶树脂组合物的预浸料，其包含（a）热固性树脂，（b）具有特定组成的水滑石化合物，（c）钼酸锌和（d）氧化镧。
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公开(公告)号：US20240263004A1
公开(公告)日：2024-08-08
申请号：US18631187
申请日：2024-04-10
CPC分类号： C08L63/04 , C08G59/245 , C08K3/36 , H01L21/56 , H01L23/295 , H01L24/16 , C08L2203/206 , H01L2224/05105 , H01L2224/05193 , H01L2924/04642 , H01L2924/0503 , H01L2924/0543 , H01L2924/10253 , H01L2924/10254 , H01L2924/186
摘要： Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150° C. and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.
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公开(公告)号：US20230399467A1
公开(公告)日：2023-12-14
申请号：US18203792
申请日：2023-05-31
CPC分类号： C08G73/12 , C08K5/541 , C08L79/085 , C08G2190/00 , C08L2203/16
摘要： Provided is an encapsulation resin composition that is suitable for encapsulating a semiconductor element-mounted surface of a substrate with a semiconductor element(s) mounted thereon or a semiconductor element-forming surface of a wafer with a semiconductor element(s) formed thereon, and is superior in low warpage property and grindability. The encapsulation resin composition of the present invention contains:
(A) a maleimide compound having at least one dimer acid frame-derived hydrocarbon group per molecule;
(B) a reaction initiator; and
(C) an inorganic filler surface-treated with a silane coupling agent,
wherein the component (C) has a maximum particle size of not larger than 40 μm.
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