公开(公告)号：US20070120230A1

公开(公告)日：2007-05-31

申请号：US11585083

申请日：2006-10-24

申请人： Shin-Hye Kim ,  Ju-Bum Lee ,  Do-Hyung Kim

发明人： Shin-Hye Kim ,  Ju-Bum Lee ,  Do-Hyung Kim

IPC分类号： H01L21/8242 ,  H01L21/20 ,  H01L23/58 ,  H01L21/31

CPC分类号： H01L21/31625 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/31111 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

摘要： In a layer structure, a method of forming the layer structure, a method of manufacturing a capacitor having the layer structure and a method of manufacturing a semiconductor device having the capacitor, a structure may be formed on a substrate. A first insulation layer including at least one kind of impurities may be formed on the structure. A flatness of the first insulation layer may fluctuate according to the type and concentration of the impurities. The first insulation layer may include silicate glass doped with first impurities including an element in Group III and/or second impurities including an element in Group V. The flatness of the first insulation layer may improve in proportion to the concentration of the first impurities whereas in inverse proportion to the concentration of the second impurities. Accordingly, the flatness of the first insulation layer may be determined by adjusting the type and concentration of the impurities.

摘要翻译： 在层结构中，形成层结构的方法，制造具有层结构的电容器的方法以及制造具有电容器的半导体器件的方法可以在基板上形成。 可以在结构上形成包括至少一种杂质的第一绝缘层。 第一绝缘层的平坦度可能根据杂质的类型和浓度而波动。 第一绝缘层可以包括掺杂有包括第III族中的元素的第一杂质的硅酸盐玻璃和/或包含第V族中的元素的第二杂质。第一绝缘层的平坦度可以与第一杂质的浓度成比例地改善，而在 与第二杂质的浓度成反比。 因此，可以通过调整杂质的种类和浓度来确定第一绝缘层的平坦度。

公开(公告)号：US20080020594A1

公开(公告)日：2008-01-24

申请号：US11827777

申请日：2007-07-13

申请人： Do-Hyung Kim ,  Ju-Bum Lee

发明人： Do-Hyung Kim ,  Ju-Bum Lee

IPC分类号： H01L21/31

CPC分类号： H01L45/1683 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144

摘要： In a method of manufacturing a phase-changeable memory device, a lower electrode is formed on a substrate. Silicon oxynitride is then deposited on the lower electrode at a temperature of about 450° C. to about 650° C. to form an insulating interlayer that is relatively dense on the lower electrode. The insulating interlayer is partially etched to form a contact hole exposing the lower electrode. A phase-changeable material layer pattern filling up the contact hole is formed on the insulating interlayer such that the phase-changeable material layer pattern makes contact with the lower electrode.

摘要翻译： 在制造相变存储器件的方法中，在基片上形成下电极。 然后在约450℃至约650℃的温度下将氮氧化硅沉积在下电极上，以形成在下电极上相对致密的绝缘中间层。 部分地蚀刻绝缘中间层以形成暴露下电极的接触孔。 在绝缘中间层上形成填充接触孔的相变材料层图案，使得相变材料层图案与下电极接触。

公开(公告)号：US06372672B1

公开(公告)日：2002-04-16

申请号：US09478064

申请日：2000-01-05

申请人： Do-Hyung Kim ,  Ju-Bum Lee ,  Byung-Keun Hwang

发明人： Do-Hyung Kim ,  Ju-Bum Lee ,  Byung-Keun Hwang

IPC分类号： H01L2131

CPC分类号： H01L21/3185 ,  C23C16/345 ,  H01L21/0332

摘要： A method of forming a silicon nitride layer in a semiconductor device manufacturing process. The silicon nitride layer (SixNyHz) is formed by PE-CVD technique at low temperature to have at most 0.35 hydrogen composition. The resulting silicon nitride layer has substantially no Si—H bonding as compared with a silicon nitride layer formed at high temperature, thereby reducing thermal stress variation during annealing. The resulting silicon nitride layer exhibits reduced thermal stress variation before and after deposition, preventing a popping phenomenon and reducing the stress applied to the underlying layer.

摘要翻译： 一种在半导体器件制造工艺中形成氮化硅层的方法。 氮化硅层（SixNyHz）通过PE-CVD技术在低温下形成，具有至多0.35个氢组成。 与在高温下形成的氮化硅层相比，所得到的氮化硅层基本上不具有Si-H键，从而降低退火时的热应力变化。 所得到的氮化硅层在沉积之前和之后表现出降低的热应力变化，防止弹出现象并降低施加到下层的应力。

公开(公告)号：US20050136686A1

公开(公告)日：2005-06-23

申请号：US11015095

申请日：2004-12-16

申请人： Do-Hyung Kim ,  Hyeon-Deok Lee ,  Ju-Bum Lee

发明人： Do-Hyung Kim ,  Hyeon-Deok Lee ,  Ju-Bum Lee

IPC分类号： H01L21/205 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/76 ,  H01L21/469

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76837

摘要： A method of filling gaps in an integrated circuit device is provided, that is less likely to fill voids and does not cause a lung defect. In one embodiment, a method of manufacturing an integrated circuit device including the gap filling method includes: etching a predetermined area of an integrated circuit device to form a trench, filling the trench with a high density plasma oxide by performing an HDP-CVD process using a first process gas including comprising a gas containing an element from the fluorine group, silane gas, and oxygen to form a high density plasma oxide layer, and plasma treating the integrated circuit substrate with a second process gas including a hydrogen gas or hydrogen and oxygen gases.

摘要翻译： 提供了一种填充集成电路装置中的间隙的方法，其不太可能填充空隙并且不引起肺部缺陷。 在一个实施例中，制造包括间隙填充方法的集成电路器件的方法包括：蚀刻集成电路器件的预定区域以形成沟槽，通过使用HDP-CVD工艺使用高密度等离子体氧化物填充沟槽 包括含有来自氟基团的元素的气体，硅烷气体和氧气以形成高密度等离子体氧化物层的第一工艺气体，以及用包括氢气或氢气和氧气的第二工艺气体等离子体处理集成电路衬底 气体。

公开(公告)号：US09412423B2

公开(公告)日：2016-08-09

申请号：US13827797

申请日：2013-03-14

申请人： Jae-Jun Lee ,  Do-Hyung Kim ,  Yong-Jin Kim ,  Bo-Ra Kim ,  Jeong-Hoon Baek ,  Kwang-Seop Kim ,  Da-Ae Heo

发明人： Jae-Jun Lee ,  Do-Hyung Kim ,  Yong-Jin Kim ,  Bo-Ra Kim ,  Jeong-Hoon Baek ,  Kwang-Seop Kim ,  Da-Ae Heo

IPC分类号： G11C7/00 ,  G11C5/04

CPC分类号： H03K19/0005 ,  G11C5/04 ,  G11C7/00

摘要： A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

摘要翻译： 存储器模块包括命令/地址（CA）寄存器，存储器件和安装在电路板上的模块电阻器单元。 集中设置的CA寄存器使用多个CA传输线将存储器件一个或多个内部CA信号驱动到存储器件的布置，其中多个内部CA传输线通常在模块电阻器单元中端接。

公开(公告)号：US09154895B2

公开(公告)日：2015-10-06

申请号：US12805121

申请日：2010-07-13

申请人： Chang Yong Son ,  Do-Hyung Kim ,  Kang Eun Lee

发明人： Chang Yong Son ,  Do-Hyung Kim ,  Kang Eun Lee

IPC分类号： H04S3/00

CPC分类号： H04S3/008

摘要： An apparatus of generating a multi-channel sound signal is provided. The apparatus may include a sound separator to determine a number (N) of sound signals based on at least one of a mixing characteristic and a spatial characteristic of a multi-channel sound signal when receiving the multi-channel sound signal, and to separate the multi-channel sound signal into N sound signals, the sound signals being generated such that the multi-channel sound signal is separated, and a sound synthesizer to synthesize N sound signals to be M sound signals.

摘要翻译： 提供一种产生多声道声音信号的装置。 该装置可以包括声音分离器，用于当接收多声道声音信号时，基于多声道声音信号的混合特性和空间特性中的至少一个来确定声音信号的数量（N），并且将 将多声道声音信号转换为N个声音信号，生成声音信号，使得多声道声音信号被分离，并且声音合成器将N个声音信号合成为M个声音信号。

公开(公告)号：US08610510B2

公开(公告)日：2013-12-17

申请号：US13348783

申请日：2012-01-12

申请人： Do-Hyung Kim ,  Ji-Hyun Kim

发明人： Do-Hyung Kim ,  Ji-Hyun Kim

IPC分类号： H03K3/03

CPC分类号： H03K3/017 ,  H03K3/021 ,  H03L7/0998

摘要： A limiter circuit in a voltage controlled oscillator (VCO) includes a first control circuit, a second control circuit and a driving circuit having a pull-up transistor and a pull-down transistor. The first control circuit generates a first driving control signal for controlling the pull-up transistor based on an AC input signal and a first DC bias voltage. The second control circuit generates a second driving control signal for controlling the pull-down transistor based on the AC input signal and a second DC bias voltage. The driving circuit generates an output signal based on the first driving control signal and the second driving control signal. The output signal swings between a first voltage at the pull-up transistor and a second voltage at the pull-down transistor.

摘要翻译： 压控振荡器（VCO）中的限幅电路包括第一控制电路，第二控制电路和具有上拉晶体管和下拉晶体管的驱动电路。 第一控制电路基于AC输入信号和第一DC偏置电压产生用于控制上拉晶体管的第一驱动控制信号。 第二控制电路产生用于基于AC输入信号和第二DC偏置电压来控制下拉晶体管的第二驱动控制信号。 驱动电路基于第一驱动控制信号和第二驱动控制信号生成输出信号。 输出信号在上拉晶体管的第一电压和下拉晶体管的第二电压之间摆动。

公开(公告)号：US08569939B2

公开(公告)日：2013-10-29

申请号：US11575292

申请日：2005-08-26

申请人： Do-Hyung Kim ,  Moon-Whan Shin ,  Woong-Joon Hwang ,  Chung-Hoon Lee

发明人： Do-Hyung Kim ,  Moon-Whan Shin ,  Woong-Joon Hwang ,  Chung-Hoon Lee

IPC分类号： H01J1/02 ,  H01J7/24 ,  H01J61/52 ,  H01K1/58

CPC分类号： H01L33/648 ,  F28D15/02 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/15724 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to a luminous device with a heat pipe formed therein and a heat pipe lead for a luminous device. The present invention provides a luminous device including a heat pipe lead or electrode and a luminous chip mounted onto the heat pipe lead or electrode. The luminous device of the present invention further comprises a heat dissipation member, such as a heat radiating plate or thermoelectric device, installed at an end of the heat pipe lead or electrode. Therefore, through the heat pipe lead or electrode of the present invention, a higher heat dissipation effect greater can be obtained as compared with the conventional one. As a result, it is possible to reduce thermal stress on a luminous device and to prevent the occurrence of a phenomenon in which external impurities penetrate into the luminous device. In addition, the cooling efficiency and the light-emitting efficiency of a luminous chip can be maximized by further disposing a heat dissipation member outside the heat pipe.

摘要翻译： 本发明涉及一种其中形成有热管的发光装置和用于发光装置的热管引线。 本发明提供了一种发光装置，其包括热管引线或电极以及安装在热管引线或电极上的发光芯片。 本发明的发光装置还包括安装在热管引线或电极的端部的诸如散热板或热电装置的散热构件。 因此，通过本发明的热管引线或电极，与以往相比，能够得到较大的散热效果。 结果，可以降低发光器件上的热应力，并且防止外部杂质渗透到发光器件中的现象的发生。 此外，通过在散热管外部进一步布置散热构件，可以使发光芯片的冷却效率和发光效率最大化。

公开(公告)号：US08486643B2

公开(公告)日：2013-07-16

申请号：US12900289

申请日：2010-10-07

申请人： David M. Sabatini ,  Do-Hyung Kim ,  Dos Sarbassov

发明人： David M. Sabatini ,  Do-Hyung Kim ,  Dos Sarbassov

IPC分类号： G01N33/53 ,  C07K14/435

CPC分类号： G01N33/5076 ,  C07K14/4702

摘要： The present invention relates to isolated raptor nucleic acid molecules of mammalian origin (e.g., human) and complements, portions and variants thereof. Another aspect of the invention are isolated raptor polypeptides of mammalian origin and portions thereof, and antibodies or antigen binding fragments thereof that specifically bind a raptor polypeptide. The present invention also relates to constructs and host cells comprising the nucleic acid molecules described herein. In addition, the present invention relates to uses of the nucleic acid and polypeptide molecules provided herein.

摘要翻译： 本发明涉及哺乳动物来源的分离的猛禽核酸分子（例如人）及其互补物，部分和变体。 本发明的另一方面是哺乳动物来源的分离的猛禽多肽及其部分，以及特异性结合猛禽多肽的抗体或其抗原结合片段。 本发明还涉及包含本文所述的核酸分子的构建体和宿主细胞。 此外，本发明涉及本文提供的核酸和多肽分子的用途。

公开(公告)号：US20130169988A1

公开(公告)日：2013-07-04

申请号：US13767543

申请日：2013-02-14

申请人： Do-Hyung Kim

发明人： Do-Hyung Kim

IPC分类号： G06K15/02

CPC分类号： G06K15/1805 ,  G06F3/1204 ,  G06F3/1211 ,  G06F3/1241 ,  G06F3/126 ,  G06F3/1286

摘要： Provided is printer operation control system and method for a printer having diverse print functions by using an external memory. The external memory is used to store information on the availability of each print function. A reader is provided for reading the information on the availability of each print function stored in the external memory. Further, a function setting unit is provided for setting up the operability of software for each print function based on the information read in the reader. Even further, a controller is provided for controlling the operation of the printer based on the operability of each software set up in the function setting unit.

摘要翻译： 提供了通过使用外部存储器的具有不同打印功能的打印机的打印机操作控制系统和方法。 外部存储器用于存储有关每个打印功能可用性的信息。 提供读取器，用于读取存储在外部存储器中的每个打印功能的可用性的信息。 此外，提供功能设置单元，用于基于读取器中读取的信息来设置针对每个打印功能的软件的可操作性。 另外，提供了一种控制器，用于基于在功能设置单元中设置的每个软件的可操作性来控制打印机的操作。