Sputtering Target for Magnetic Recording Film and Process for Production Thereof
    2.
    发明申请
    Sputtering Target for Magnetic Recording Film and Process for Production Thereof 有权
    磁记录膜溅射靶及其制造方法

    公开(公告)号:US20130248362A1

    公开(公告)日:2013-09-26

    申请号:US13990109

    申请日:2011-10-19

    IPC分类号: C23C14/34 B22F3/14

    摘要: A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

    摘要翻译: 用于含有SiO 2的磁记录膜的溅射靶,其中,在X射线衍射中,石英相对于背景强度(即石英峰强度/背景强度)的(011)面的峰强度比为1.40以上。 本发明的目的是获得能够抑制溅射中产生颗粒的目标中形成方英石的磁记录膜的溅射靶,缩短烧结时间,磁性和细分离单畴 沉积后的颗粒,并提高记录密度。

    SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME
    3.
    发明申请
    SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME 有权
    用于磁记录膜的溅射靶及其制造方法

    公开(公告)号:US20130098760A1

    公开(公告)日:2013-04-25

    申请号:US13808172

    申请日:2011-02-02

    IPC分类号: C23C14/14

    摘要: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

    摘要翻译: 提供了一种包含用于磁记录膜的SiO 2的溅射靶,其中结晶SiO 2的方石英的峰强度与X射线衍射中的背景强度(方石英峰强度/背景强度)的比率为1.40以下 。 本发明的目的在于获得能够抑制溅射中产生颗粒的靶中方英石形成的磁记录膜的溅射靶,并且缩短了老化时间。

    Sputtering target of ferromagnetic material with low generation of particles
    6.
    发明授权
    Sputtering target of ferromagnetic material with low generation of particles 有权
    铁磁材料的溅射靶与低代粒子

    公开(公告)号:US08679268B2

    公开(公告)日:2014-03-25

    申请号:US13320840

    申请日:2010-09-30

    摘要: A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.

    摘要翻译: 一种铁磁溅射靶,其包含具有20摩尔%以下的Cr的组成的金属,余量为Co; 其特征在于,在所述基体金属(A)中,所述基体金属(A)和含有90重量%以上的Co的平坦相(B),所述相(B)的平均粒径为10μm, 多于150μm以下,相(B)的平均纵横比为1:2〜1:10。 本发明提供能够抑制溅射时的粒子产生的铁磁性溅射靶,提高通过磁通以通过磁控溅射装置实现稳定的放电。

    Sputtering Target for Magnetic Recording Film
    7.
    发明申请
    Sputtering Target for Magnetic Recording Film 有权
    磁记录膜溅射靶

    公开(公告)号:US20130306470A1

    公开(公告)日:2013-11-21

    申请号:US13982051

    申请日:2012-03-23

    IPC分类号: C23C14/34

    摘要: A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (IG/ID) of peak intensities of the G-band to the D-band in Raman scattering spectrometry is 5.0 or less. The sputtering target for a magnetic recording film, which contains carbon powders dispersed therein, makes it possible to produce a magnetic thin film having a granular structure without using an expensive apparatus for co-sputtering; and in particular, the target is an Fe—Pt-based sputtering target. Carbon is a material which is difficult to sinter and has a problem that carbon particles are apt to form agglomerates. There is hence a problem that carbon masses are readily detached during sputtering to generate a large number of particles on the film after sputtering. The high-density sputtering target can solve these problems.

    摘要翻译: 作为含有碳的磁记录膜的溅射靶,溅射靶的特征在于,拉曼散射光谱法中的G带与D波段的峰值强度的比(IG / ID)为5.0以下。 包含分散在其中的碳粉末的磁记录膜的溅射靶使得可以制造具有颗粒结构的磁性薄膜而不使用昂贵的共溅射设备; 特别是靶为Fe-Pt系溅射靶。 碳是难以烧结的材料,具有碳粒易于形成附聚物的问题。 因此存在在溅射期间碳质量容易分离以在溅射之后在膜上产生大量颗粒的问题。 高密度溅射靶可以解决这些问题。

    Fe-Pt-Based Sputtering Target with Dispersed C Grains
    8.
    发明申请
    Fe-Pt-Based Sputtering Target with Dispersed C Grains 有权
    基于Fe-Pt的溅射靶与分散C颗粒

    公开(公告)号:US20130213803A1

    公开(公告)日:2013-08-22

    申请号:US13880135

    申请日:2011-11-14

    IPC分类号: C23C14/34

    摘要: A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe100-X—PtX)100-A—CA (provided A is a number which satisfies 20≦A≦50 and X is a number which satisfies 35≦X≦55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher.An object of this invention is to enable the production of a magnetic thin film with granular structure without using an expensive simultaneous sputtering device, as well as provide a high-density sputtering target capable of reducing the amount of particles generated during sputtering.

    摘要翻译: 其中基于原子性的组成比由式(Fe100-X-PtX)100-A-CA表示的烧结致密溅射靶(提供A为满足20≤A@ 50的数,X为 满足35 @ X @ 55),其中C晶粒细分散在合金中,相对密度为90%以上。 本发明的目的是能够制造具有颗粒结构的磁性薄膜而不使用昂贵的同时溅射装置,并且提供能够减少溅射期间产生的颗粒量的高密度溅射靶。

    Fe-Pt-Based Ferromagnetic Material Sputtering Target
    9.
    发明申请
    Fe-Pt-Based Ferromagnetic Material Sputtering Target 有权
    基于Fe-Pt的铁磁材料溅射靶

    公开(公告)号:US20130168240A1

    公开(公告)日:2013-07-04

    申请号:US13816043

    申请日:2011-08-05

    IPC分类号: C23C14/34

    摘要: An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.

    摘要翻译: 包含金属和金属氧化物的Fe-Pt系铁磁材料溅射靶,其中,所述金属的含量为5摩尔%以上且60摩尔%以下且余量为Fe的组成。 本发明的目的是提供一种铁磁材料溅射靶,其能够形成由诸如Fe-Pt合金的磁相和非磁性相组成的磁记录层以隔离磁相,并且在 其中使用金属氧化物作为非磁性相的材料之一。 本发明提供一种强磁性材料溅射靶,其特征在于,抑制溅射时的金属氧化物的无意的释放以及由于靶内固有地形成的空穴而产生的异常放电而产生的粒子,从而提高了金属氧化物与基体合金之间的粘附性, 其密度增加。

    Ferromagnetic Sputtering Target with Less Particle Generation
    10.
    发明申请
    Ferromagnetic Sputtering Target with Less Particle Generation 审中-公开
    具有较少颗粒生成的铁磁溅射靶

    公开(公告)号:US20140001038A1

    公开(公告)日:2014-01-02

    申请号:US14004227

    申请日:2012-04-06

    IPC分类号: C23C14/34

    摘要: Provided is a nonmagnetic-material-dispersed sputtering target having a metal composition comprising 20 mol % or less of Cr and the balance of Co. The target has a structure including a phase (A) in which a nonmagnetic oxide material is dispersed in the basis metal, and a metal phase (B) containing 40 mol % or more of Co; the area proportion of grains of the nonmagnetic oxide material in the phase (A) is 50% or less; and when a minimum-area rectangle circumscribed to the phase (B) is assumed, the proportion of the circumscribed rectangle having a short side of 2 to 300 μm is 90% or more of all of the phases (B). The ferromagnetic sputtering target can suppress particle generation during sputtering and can improve leakage magnetic flux to allow stable electrical discharge with a magnetron sputtering apparatus.

    摘要翻译: 本发明提供一种非磁性材料分散溅射靶,其具有包含20mol%以下的Cr和余量的Co的金属组成物。靶具有包括其中非磁性氧化物材料分散在基材中的相(A)的结构 金属和含有40摩尔%以上的Co的金属相(B) 相(A)中非磁性氧化物材料的面积比例为50%以下; 并且当假设包围相(B)的最小面积矩形时,具有2〜300μm的短边的外接矩形的比例为所有相(B)的90%以上。 铁磁性溅射靶可以抑制溅射时的粒子产生,能够提高漏磁通,能够通过磁控溅射装置进行稳定的放电。