公开(公告)号：US07378334B2

公开(公告)日：2008-05-27

申请号：US11344197

申请日：2006-02-01

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L21/20

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。 在p型氮化物半导体层8上形成包含多于一个金属层的第一结合层。 具有第一面和第二面的支撑衬底的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于用于生长氮化物半导体的衬底1的热膨胀系数。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US08030665B2

公开(公告)日：2011-10-04

申请号：US12113030

申请日：2008-04-30

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US07105857B2

公开(公告)日：2006-09-12

申请号：US10614342

申请日：2003-07-08

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L31/12

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20080296609A1

公开(公告)日：2008-12-04

申请号：US12113030

申请日：2008-04-30

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20060128118A1

公开(公告)日：2006-06-15

申请号：US11344197

申请日：2006-02-01

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

公开(公告)号：US20140034872A1

公开(公告)日：2014-02-06

申请号：US14007732

申请日：2011-12-26

申请人： Hiroyasu Watanabe ,  Daisuke Morita ,  Manabu Yamamoto ,  Kazumichi Koga ,  Akihisa Kajiyama ,  Hiroaki Masukuni ,  Hideaki Sadamura ,  Ryuta Masaki ,  Kazutoshi Matsumoto

发明人： Hiroyasu Watanabe ,  Daisuke Morita ,  Manabu Yamamoto ,  Kazumichi Koga ,  Akihisa Kajiyama ,  Hiroaki Masukuni ,  Hideaki Sadamura ,  Ryuta Masaki ,  Kazutoshi Matsumoto

IPC分类号： H01M4/505 ,  C30B1/10 ,  C30B1/02 ,  H01M4/525

CPC分类号： C30B1/10 ,  C01G45/1242 ,  C01G51/54 ,  C01G53/54 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/80 ,  C30B1/02 ,  H01M4/505 ,  H01M4/525 ,  Y10T428/2982

摘要： The present invention provides a precursor of positive electrode active substance particles for non-aqueous electrolyte secondary batteries which have a high discharge voltage and a high discharge capacity, hardly suffer from side reactions with an electrolyte solution, and are excellent in cycle characteristics, positive electrode active substance particles for non-aqueous electrolyte secondary batteries, and processes for producing these particles, and a non-aqueous electrolyte secondary battery. The present invention relates to positive electrode active substance particles for non-aqueous electrolyte secondary batteries having a spinel structure with a composition represented by the following chemical formula (1), in which the positive electrode active substance particles satisfy the following characteristic (A) and/or characteristic (B) when indexed with Fd−3m in X-ray diffraction thereof: (A) when indexed with Fd−3m in X-ray diffraction of the positive electrode active substance particles, a ratio of I(311) to I(111) [I(311)/I(111)] is in the range of 35 to 43%, and/or (B) when indexed with Fd−3m in X-ray diffraction of the positive electrode active substance particles, a gradient of a straight line determined by a least square method in a graph prepared by plotting sine in an abscissa thereof and B cos θ in an ordinate thereof wherein B is a full-width at half maximum with respect to each peak position 2θ (10 to 90°) is in the range of 3.0×10−4 to 20.0×10−4; and Li1+xMn2−y−zNiyMzO4  Chemical Formula (1) wherein x, y, z fall within the range of −0.05≦x≦0.15, 0.4≦y≦0.6 and 0≦z≦0.20, respectively; and M is at least one element selected from the group consisting of Mg, Al, Si, Ca, Ti, Co, Zn, Sb, Ba, W and Bi.

公开(公告)号：US20130045421A1

公开(公告)日：2013-02-21

申请号：US13503155

申请日：2010-10-21

申请人： Masashi Kobino ,  Katsuhiro Fujita ,  Shoichi Fujino ,  Akihisa Kajiyama ,  Ryuta Masaki ,  Daisuke Morita ,  Takayuki Yamamura ,  Tetsuya Kodaira ,  Minoru Yamasaki ,  Seiji Okazaki ,  Toshiaki Hiramoto ,  Akino Sato ,  Wataru Oda ,  Kenji Okinaka

发明人： Masashi Kobino ,  Katsuhiro Fujita ,  Shoichi Fujino ,  Akihisa Kajiyama ,  Ryuta Masaki ,  Daisuke Morita ,  Takayuki Yamamura ,  Tetsuya Kodaira ,  Minoru Yamasaki ,  Seiji Okazaki ,  Toshiaki Hiramoto ,  Akino Sato ,  Wataru Oda ,  Kenji Okinaka

IPC分类号： H01M4/525 ,  B32B5/16 ,  C01G53/04

CPC分类号： C01G45/006 ,  C01G45/1221 ,  C01G51/006 ,  C01G51/44 ,  C01G53/006 ,  C01G53/42 ,  C01G53/44 ,  C01P2002/52 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/505 ,  H01M4/525 ,  H01M10/052 ,  Y10T428/2982

摘要： The present invention relates to nickel-cobalt-manganese-based compound particles which have a volume-based average secondary particle diameter (D50) of 3.0 to 25.0 μm, wherein the volume-based average secondary particle diameter (D50) and a half value width (W) of the peak in volume-based particle size distribution of secondary particles thereof satisfy the relational formula: W≦0.4×D50, and can be produced by dropping a metal salt-containing solution and an alkali solution to an alkali solution at the same time, followed by subjecting the obtained reaction solution to neutralization and precipitation reaction. The nickel-cobalt-manganese-based compound particles according to the present invention have a uniform particle size, a less content of very fine particles, a high crystallinity and a large primary particle diameter, and therefore are useful as a precursor of a positive electrode active substance used in a non-aqueous electrolyte secondary battery.

摘要翻译： 本发明涉及体积平均二次粒径（D50）为3.0〜25.0μm的镍钴锰系化合物粒子，其中体积平均二次粒径（D50）和半值宽度 二次粒子的体积基准粒径分布峰的（W）满足关系式：W＆nlE; 0.4×D50，可以通过在金属盐溶液中滴加含金属盐的溶液和碱溶液至碱溶液 同时对所得反应溶液进行中和沉淀反应。 本发明的镍钴锰系化合物粒子的粒径均匀，粒子含量少，结晶性高，初级粒径大，因此可用作正极的前体 用于非水电解质二次电池的活性物质。

公开(公告)号：US08190603B2

公开(公告)日：2012-05-29

申请号：US12196816

申请日：2008-08-22

申请人： Daisuke Morita

发明人： Daisuke Morita

IPC分类号： G06F17/30

CPC分类号： G06F17/30864

摘要： An information providing system which provides accumulated information items in compliance with requests has an association unit which totals access logs to the information items in each predetermined access unit. The association unit associates the plurality of information items accessed in the predetermined access unit as relevant information items. The information providing system also has an information providing unit which provides a requested information item when any of the plurality of information items associated by the association unit has been requested and which simultaneously provides any other information associated with the requested information or an access portion to the other information.

摘要翻译： 提供符合请求的累积信息项的信息提供系统具有将每个预定访问单元中的信息项总计访问日志的关联单元。 关联单元将在预定访问单元中访问的多个信息项关联为相关信息项。 信息提供系统还具有信息提供单元，该信息提供单元当已经请求了由关联单元关联的多个信息项中的任何一个时提供所请求的信息项，并且同时提供与所请求的信息相关联的任何其他信息或访问部分 其他信息。

公开(公告)号：US06738175B2

公开(公告)日：2004-05-18

申请号：US10149755

申请日：2002-06-13

申请人： Daisuke Morita ,  Motokazu Yamada

发明人： Daisuke Morita ,  Motokazu Yamada

IPC分类号： G02F103

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/34333

摘要： To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of Inx1Ga1−x1N (x1>0) containing In and a first barrier layer made of Aly2Ga1−y2N (y2>0) containing Al formed on the well layer.

摘要翻译： 为了增强发光器件的发射输出，其包括由包含In的氮化物半导体制成的有源层，发光器件在n型半导体层和p型半导体层之间具有有源层，其特征在于，所述有源层 包含由In构成的In x 1 Ga 1-x1 N（x1> 0）的阱层和在阱层上形成的含Al的AlI 2 Ga 1-y 2 N（y2> 0）的第一势垒层。

公开(公告)号：US08592085B2

公开(公告)日：2013-11-26

申请号：US13503155

申请日：2010-10-21

申请人： Masashi Kobino ,  Katsuhiro Fujita ,  Shoichi Fujino ,  Akihisa Kajiyama ,  Ryuta Masaki ,  Daisuke Morita ,  Takayuki Yamamura ,  Tetsuya Kodaira ,  Minoru Yamasaki ,  Seiji Okazaki ,  Toshiaki Hiramoto ,  Akino Sato ,  Wataru Oda ,  Kenji Okinaka

发明人： Masashi Kobino ,  Katsuhiro Fujita ,  Shoichi Fujino ,  Akihisa Kajiyama ,  Ryuta Masaki ,  Daisuke Morita ,  Takayuki Yamamura ,  Tetsuya Kodaira ,  Minoru Yamasaki ,  Seiji Okazaki ,  Toshiaki Hiramoto ,  Akino Sato ,  Wataru Oda ,  Kenji Okinaka

IPC分类号： H01M4/13

CPC分类号： C01G45/006 ,  C01G45/1221 ,  C01G51/006 ,  C01G51/44 ,  C01G53/006 ,  C01G53/42 ,  C01G53/44 ,  C01P2002/52 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/505 ,  H01M4/525 ,  H01M10/052 ,  Y10T428/2982

摘要： The present invention relates to nickel-cobalt-manganese-based compound particles which have a volume-based average secondary particle diameter (D50) of 3.0 to 25.0 μm, wherein the volume-based average secondary particle diameter (D50) and a half value width (W) of the peak in volume-based particle size distribution of secondary particles thereof satisfy the relational formula: W≦0.4×D50, and can be produced by dropping a metal salt-containing solution and an alkali solution to an alkali solution at the same time, followed by subjecting the obtained reaction solution to neutralization and precipitation reaction. The nickel-cobalt-manganese-based compound particles according to the present invention have a uniform particle size, a less content of very fine particles, a high crystallinity and a large primary particle diameter, and therefore are useful as a precursor of a positive electrode active substance used in a non-aqueous electrolyte secondary battery.

摘要翻译： 本发明涉及体积平均二次粒径（D50）为3.0〜25.0μm的镍钴锰系化合物粒子，其中体积平均二次粒径（D50）和半值宽度 二次粒子的体积基准粒径分布峰值（W）满足关系式：W_0.4×D50，可以通过在金属盐溶液中将含金属盐的溶液和碱溶液滴加到碱溶液中 同时对所得反应溶液进行中和沉淀反应。 本发明的镍钴锰系化合物粒子的粒径均匀，粒子含量少，结晶性高，初级粒径大，因此可用作正极的前体 用于非水电解质二次电池的活性物质。